Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Patent metadata

Field	Value
Publication number	US-10385236-B2
Application number	US-201515538851-A
Country	US
Kind code	B2
Filing date	Dec 22, 2015
Priority date	Dec 22, 2014
Publication date	Aug 20, 2019
Grant date	Aug 20, 2019

Abstract

A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

First claim

The invention claimed is:

1. A method for chemical mechanical polishing of a surface of a (i) cobalt and/or (ii) a cobalt alloy layer present on a substrate, wherein the method comprises:
chemical mechanical polishing of said surface of the cobalt and/or cobalt alloy layer with a chemical mechanical polishing (CMP) composition, said composition comprising
(A) an inorganic particle,
(B) a substituted aromatic compound with at least one carboxylic acid function of the general formula 1 to 5 as corrosion inhibitor

wherein R 1 , R 2 , R 3 , R 4 and R 5 are independently from each other H, hydroxy, alkyl, amino, aryl alkylamino, alkylarylamino, benzylamino, carboxyl, alkylsulfonyl, sulfonic acid, sulfonate, thio or alkylthio,
(C) at least one amino acid,
(D) at least one oxidizer,
(E) an aqueous medium, and
wherein the CMP composition (Q) has a pH of from 7 to 10.

2. The method according to claim 1 , wherein the inorganic particles (A) are colloidal inorganic particles.

3. The method according to claim 2 , wherein the colloidal inorganic particles are silica particles.

4. The method according to claim 1 , wherein the substituted aromatic compound with at least one carboxylic acid function (B) is at least one of the general formula 1 to 5, and Wherein is amino, mono-alkylamino, di-alkyamino, carboxyl, alkythio or alkylsulfonyl, R 2 is amino, mono-alkylamino, di-alkyamino or carboxyl, R 3 is benzylamino, R 4 is amino, mono-alkylamino, di-alkyamino and R 5 is amino, carboxyl or alkyl.

5. The method according to claim 1 , wherein the substituted aromatic compound with at least one carboxylic acid function (B) is at least one of the general formula 1 to 5 and wherein R 1 is amino, mono-methylamino, di-methylamino, di-ethylamino, carboxyl or methylsulfonyl, R 2 is amino, mono-methylamino, di-methylamino or carboxyl, R 3 is benzylamino, R 4 is amino, and R 5 is amino or carboxyl.

6. The method according to claim 1 , wherein a total amount of the substituted aromatic compound with at least one carboxylic acid function (B) of one of general formula 1 to S is in the range of from 0.002 wt.-% to 0.15 wt.-% based on the total weight of the respective CMP composition.

7. The method according to claim 1 , wherein the at least one amino acids (C) is glycine, alanine, leucine, valine, cysteine, serine and proline or a salt thereof.

8. The method according to claim 1 , wherein a total amount of the at least one amino acid (C) is in the range of from 0.1 wt.-% to 2.25 wt.-% based on the total weight of the respective CMP composition.

9. The method according to claim 1 wherein the oxidizer comprises a peroxide.

10. The method according to claim 1 , wherein the oxidizer is hydrogen peroxide.

11. A chemical mechanical polishing (CMP) composition, comprising:
(A) colloidal silica particles in a total amount of from 0.01 wt.-% to 3 wt.-% based on the total weight of the respective CMP composition,
(B) at least one substituted aromatic compound with at least one carboxylic acid function (B) selected from the group consisting of isophathalic acid, terephthalic acid, 2-aminoterephthalic acid, 4-methylamino benzoic acid, 4-(dimethylamino)benzoic acid, 4-methylsulfonyl benzoic acid, trimeric acid, 3-methylamino benzoic acid, 4-(diethylamino)benzoic acid, 3-dimethylamino benzoic acid and 2-(benzylamino)benzoic acid in a total amount of from 0.002 wt.-% to 0.1 wt.-% based on the total weight of the respective CMP composition,
(C) at least one amino acids (C) selected from the group consisting of glycine, alanine, leucine, valine, cysteine, serine and proline and a salt thereof, in a total amount of from 0.2 wt.-% to 0.9 wt.-% based on the total weight of the respective CMP composition,
(D) hydrogen peroxide in a total amount of from 0.2 wt.-% to 2 wt.-% a based on the total weight of the respective CMP composition, and
(E) an aqueous medium,
wherein the CMP composition (Q) has a pH of from 7 to 10.

12. A process for the manufacture of a semiconductor device, said process comprising:
chemical mechanical polishing of a surface of a cobalt and/or a cobalt alloy layer on a substrate (S) used in the semiconductor industry,
in the presence of a chemical mechanical polishing CMP composition (Q);
wherein the (CMP) composition comprises
(A) an inorganic particle,
(B) a substituted aromatic compound with at least one carboxylic acid function of the general formula 1 to 5 as corrosion inhibitor

wherein R 1 , R 2 , R 3 , R 4 and R 5 are independently from each other H, hydroxy, alkyl, amino, aryl alkylamino, alkylarylamino, benzylamino, carboxyl, alkylsulfonyl, sulfonic acid, sulfonate, thio or alkylthio,
(C) at least one amino acid,
(D) at least one oxidizer,
(E) an aqueous medium, and
wherein the CMP composition (Q) has a pH of from 7 to 10.

13. The process according to claim 12 , wherein a static etch rate (SER) of cobalt is below 100 Å/min.

14. The process according to claim 12 , wherein a cobalt material removal rate (MRR) is adjusted to a range of from 300 to 7200 Å/min.

Assignees

• Basf Se

Inventors

• Reichardt Robert
• Siebert Max
• Lan Yongqing
• Lauter Michael
• Usman Ibrahim Sheik Ansar
• Golzarian Reza
• Guevenc Haci Osman
• Proelss Julian
• Leunissen Leonardus

Classifications

• H10P95/60

  Mechanical treatments, e.g. by ultrasounds · CPC title

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title