Chemical-mechanical polishing compositions comprising N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Patent metadata

Field	Value
Publication number	US-9828527-B2
Application number	US-201615336245-A
Country	US
Kind code	B2
Filing date	Oct 27, 2016
Priority date	May 15, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

Described is a chemical-mechanical polishing (CMP) composition comprising the following components:
(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents,

wherein the pH of the composition is in the range of from 2 to 6.

First claim

The invention claimed is:

1. A method for polishing a substrate or layer containing one or more III-V materials comprising contacting it with a chemical-mechanical polishing (CMP) composition comprising the following components:
(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6,
(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid,
(C) water
(D) optionally one or more further constituents,
wherein the pH of the composition is in the range of from 2 to 6;
wherein at least one of the III-V materials is at least one material selected from the group consisting of GaN, GaP, GaAs, GaSb, AlAs, AlN, InP, InAs, InSb, InGaAs, InAlAs, AlGaAs, GaAlN, GaInN, InGaAlAs, InGaAsP, InGaP, AlInP, GaAlSb, GaInSb, GaAlAsSb, and GaInAsSb.

2. The method according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with metallate ions or modified with sulfonic acid.

3. The method according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with at least one metallate ion selected from the group consisting of aluminate, stannate, zincate, and plumbate.

4. The method according to claim 1 , wherein the surface modified silica particles of component (A) having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 are silica particles anionically modified with aluminate.

5. The method according to claim 1 , wherein
the total amount of (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 is in the range of from 0.1 wt % to 30 wt %, based on the total weight of the chemical-mechanical polishing (CMP) composition
and/or
the total amount of (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid is in the range of from 0.01 to 3 wt % based on the total weight of the chemical-mechanical polishing (CMP) composition.

6. The method according to claim 1 , comprising one or more further constituents as component (D),
wherein the one or at least one of or all of the further constituents of component (D) are selected from the group consisting of oxidizing agents, abrasive materials different from surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6, stabilizers, surfactants, friction reducing agents, and buffer substances.

Assignees

• Basf Se

Inventors

• Lan Yongqing
• Przybylski Peter
• Bao Zhenyu
• Proelss Julian

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• H01L21/30625

  Electricity · mapped topic