Memory element with a reactive metal layer

Patent metadata

Field	Value
Publication number	US-10340312-B2
Application number	US-201715797716-A
Country	US
Kind code	B2
Filing date	Oct 30, 2017
Priority date	Feb 6, 2004
Publication date	Jul 2, 2019
Grant date	Jul 2, 2019

Abstract

A re-writeable non-volatile memory device including a re-writeable non-volatile two-terminal memory element (ME) having tantalum. The ME including a first terminal, a second terminal, a first layer of a conductive metal oxide (CMO), and a second layer in direct contact with the first layer. The second layer and the first layer being operative to store at least one-bit of data as a plurality of resistive states, and the first and second layer are electrically in series with each other and with the first and second terminals.

First claim

What is claimed is:

1. A re-writeable non-volatile memory device, comprising:
a re-writeable non-volatile two-terminal memory element (ME) comprising:
a first terminal,
a second terminal,
a first layer, and
a second layer of reactive metal in direct contact with the first layer, the second layer and the first layer operative to store at least one-bit of data as a state of the re-writable non-volatile two-terminal ME.

2. The re-writeable non-volatile memory device of claim 1 , wherein the re-writeable non-volatile two-terminal ME comprises tantalum.

3. The re-writeable non-volatile memory device of claim 1 , wherein the re-writeable non-volatile two-terminal ME comprises titanium.

4. The re-writeable non-volatile memory device of claim 1 , wherein first layer comprises a first transition metal.

5. The re-writeable non-volatile memory device of claim 1 , wherein the second layer comprises a first transition metal.

6. The re-writeable non-volatile memory device of claim 1 , wherein first layer comprises a first transition metal, and wherein the second layer comprises a second transition metal being different than the first transition metal.

7. The re-writeable non-volatile memory device of claim 1 , wherein the re-writeable non-volatile two-terminal ME comprises crystalline.

8. The re-writeable non-volatile memory device of claim 1 , wherein the re-writeable non-volatile two-terminal ME comprises a combination of materials including a first transition metal and a material that is different than the first transition metal.

9. The re-writeable non-volatile memory device of claim 1 , wherein the reactive metal of the second layer creates a differential between a first resistive state and a second resistive state in the first layer to exhibit switching properties.

10. The re-writeable non-volatile memory device of claim 1 , wherein the second layer of the reactive metal is deposited on the first layer and is less than 200 Å thick.

11. The re-writeable non-volatile memory device of claim 1 , wherein the reactive metal reacts with the first layer to form a layer of reacted metal in the re-writeable non-volatile two-terminal ME such that the re-writeable non-volatile two-terminal ME is a multi-resistive state ME.

12. The re-writeable non-volatile memory device of claim 11 , wherein the reactive metal creates a non-ohmic device within the multi-resistive state ME.

13. The re-writeable non-volatile memory device of claim 1 , wherein the reactive metal is between 10 Å thick and 100 Å thick.

14. A method of fabricating a re-writeable non-volatile memory device, the method comprising:
forming a first terminal;
forming a second terminal;
forming a first layer; and
forming a second layer of reactive metal in direct contact with the first layer, the second layer and the first layer operative to store at least one-bit of data as a state of a re-writable non-volatile two-terminal memory element.

15. The method of claim 14 , wherein the first layer comprises a transition metal.

16. The method of claim 14 , wherein the second layer comprises a transition metal.

17. The method of claim 14 , wherein the first layer comprises a first transition metal and the second layer comprises a second transition metal that is different than the first transition metal.

18. The method of claim 14 , wherein the re-writeable non-volatile two-terminal ME comprises a combination of materials including a first transition metal and a material that is different than the first transition metal.

19. The method of claim 14 , wherein the forming of the first and second layers are performed through deposition using processing at temperature above 400° C.

20. The method of claim 14 , wherein the forming the second layer comprises depositing the second layer of the reactive metal on the first layer, wherein the second layer of the reactive metal is less than 200 Å thick.

Assignees

• Hefei Reliance Memory Ltd

Inventors

• Chevallier Christophe J
• Hsia Steve Kuo-Ren
• Kinney Wayne
• Longcor Steven
• Rinerson Darrell
• Sanchez John
• Swab Philip F S
• Ward Edmond R

Classifications

• G11C2213/32

  Material having simple binary metal oxide structure · CPC title

• G11C11/5685 Primary

  using storage elements comprising metal oxide memory material, e.g. perovskites · CPC title

• G11C2213/15

  Current-voltage curve · CPC title

• G11C2213/77

  Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title