Inertial and pressure sensors on single chip
US-9908771-B2 · Mar 6, 2018 · US
US10317211B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10317211-B2 |
| Application number | US-201415108414-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 30, 2014 |
| Priority date | Dec 30, 2013 |
| Publication date | Jun 11, 2019 |
| Grant date | Jun 11, 2019 |
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Official abstract text for this publication.
In one embodiment, a sensor includes a rigid wafer outer body. A first cavity is located within the rigid wafer outer body, and a first vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity. A second vibration isolating spring is supported by the rigid wafer outer body and extends into the first cavity, and a first sensor packaging is supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity.
Opening claim text (preview).
The invention claimed is: 1. A sensor, comprising: a rigid wafer outer body; a first cavity located within the rigid wafer outer body; a first vibration isolating spring supported by the rigid wafer outer body and extending into the first cavity; a second vibration isolating spring supported by the rigid wafer outer body and extending into the first cavity; and a first sensor packaging supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity. 2. The sensor of claim 1 , wherein the first sensor packaging includes an encapsulated sensor element located within a second cavity. 3. The sensor of claim 2 , wherein: the first cavity has a first pressure; the second cavity has a second pressure; and the first pressure is a different pressure from the second pressure. 4. The sensor of claim 2 , further comprising: a second sensor packaging directly supported by the rigid wafer outer body. 5. The sensor of claim 2 , further comprising: a second sensor packaging supported by the first vibration isolating spring and the second vibration isolating spring within the first cavity. 6. The sensor of claim 2 , wherein: the first vibration isolating spring has a first spring constant; the second vibration isolating spring has a second spring constant; and the first spring constant is different from the second spring constant. 7. The sensor of claim 2 , further comprising: at least one anchor; and at least one third spring extending from the at least one anchor and supporting the rigid wafer outer body, the at least one third spring integrally formed with the at least one anchor and the rigid wafer outer body. 8. The sensor of claim 2 , wherein: the rigid wafer outer body includes a first portion of a silicon dioxide layer; and a second portion of the silicon dioxide layer is located at a bottom portion of the first sensor packaging. 9. The sensor of claim 2 , further comprising: at least one interconnect extending from the first sensor packaging into the rigid wafer outer body and supported by the first vibration isolating spring. 10. The sensor of claim 9 , wherein the at least one interconnect is embedded within the first vibration isolating spring. 11. The senor of claim 2 , wherein the encapsulated sensor element is formed from a middle device layer, the first sensor packaging further including: a lower device layer directly beneath the encapsulated sensor element, the lower device layer mechanically and electrically isolated from the encapsulated sensor element; and an upper device layer directly above the encapsulated sensor element, the upper device layer mechanically and electrically isolated from the encapsulated sensor element.
between laterally-adjacent chips · CPC title
Details · CPC title
by relative movement of capacitor electrodes · CPC title
in two or more dimensions · CPC title
Electricity · mapped topic
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