Semiconductor devices and methods of fabricating the same

Patent metadata

Field	Value
Publication number	US-10283698-B2
Application number	US-201715666903-A
Country	US
Kind code	B2
Filing date	Aug 2, 2017
Priority date	Jan 10, 2017
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

A device, which may include a semiconductor device, may include a contact plug, a first barrier metal covering a bottom surface of the contact plug and a lower sidewall of the contact plug, such that the first barrier metal exposes an upper sidewall of the contact plug, and an insulation pattern covering the upper sidewall of the contact plug such that the insulation pattern isolates the first barrier metal from exposure. A magnetic tunnel junction pattern may cover a top surface of the contact plug. Each element of the contact plug, the first barrier metal, and the insulation pattern may be in a contact hole of a first interlayer dielectric layer.

First claim

What is claimed is:

1. A device, comprising:
a first interlayer dielectric layer on a semiconductor substrate, the first interlayer dielectric layer including a contact hole;
a contact plug in the contact hole, the contact plug having a bottom surface, a lower sidewall, and an upper sidewall;
a first barrier metal in the contact hole, the first barrier metal covering the bottom surface of the contact plug and the lower sidewall of the contact plug, the first barrier metal exposing the upper sidewall of the contact plug;
an insulation pattern in the contact hole, the insulation pattern covering the upper sidewall of the contact plug; and
a magnetic tunnel junction pattern covering a top surface of the contact plug,
wherein the insulation pattern is exposed below the magnetic tunnel junction pattern and a top surface of the insulation pattern is exposed from the contact plug,
wherein a width of a bottom surface of the magnetic tunnel junction pattern is greater than a width of the top surface of the contact plug such that at least a portion of the bottom surface of the magnetic tunnel junction pattern vertically overlaps at least a portion of the top surface of the insulation pattern.

2. The device of claim 1 , further comprising:
a second interlayer dielectric layer on the first interlayer dielectric layer, the second interlayer dielectric layer covering a side surface of the magnetic tunnel junction pattern,
wherein the second interlayer dielectric layer is in contact with the insulation pattern.

3. The device of claim 1 , wherein,
the first interlayer dielectric layer includes a top surface, the top surface of the first interlayer dielectric layer including a recessed region adjacent to the contact hole, and
the top surface of the insulation pattern is exposed on an edge of a sidewall of the recessed region.

4. The device of claim 1 , wherein,
the first interlayer dielectric layer includes a top surface, and
the top surface of the first interlayer dielectric layer is substantially coplanar with the top surface of the insulation pattern.

5. The device of claim 1 , wherein,
the contact plug includes a first contact plug and a second contact plug, the first contact plug is in contact with the first barrier metal, and an upper sidewall of the second contact plug is in contact with the insulation pattern, and
the device further includes a second barrier metal that is interposed between the first contact plug and the second contact plug and between the first interlayer dielectric layer and a lower sidewall of the second contact plug.

6. The device of claim 5 , wherein the second barrier metal is thicker than the first barrier metal.

7. The device of claim 5 , wherein the insulation pattern has a substantially same thickness as a thickness of the second barrier metal.

8. The device of claim 1 , further comprising:
an amorphous conductive pad between the magnetic tunnel junction pattern and the contact plug,
wherein the amorphous conductive pad covers an entire top surface of the contact plug and is in contact with at least a portion of the top surface of the insulation pattern.

9. The device of claim 1 , wherein
an edge of the bottom surface of the magnetic tunnel junction pattern overlaps the insulation pattern.

10. A device, comprising:
a first interlayer dielectric layer including a contact hole;
a contact plug in the contact hole, the contact plug having a bottom surface, a lower sidewall, and an upper sidewall;
a first barrier metal in the contact hole, the first barrier metal covering the bottom surface of the contact plug and the lower sidewall of the contact plug, the first barrier metal exposing the upper sidewall of the contact plug; and
an insulation pattern in the contact hole, the insulation pattern covering the upper sidewall of the contact plug, the insulation pattern isolating the first barrier metal from exposure; and
a magnetic tunnel junction pattern covering a top surface of the contact plug,
wherein the first interlayer dielectric layer includes a top surface, the top surface of the first interlayer dielectric layer including a recessed region adjacent to the contact hole, and
wherein the insulation pattern includes a top surface, the top surface of the insulation pattern exposed on an edge of a sidewall of the recessed region
wherein a width of a bottom surface of the magnetic tunnel junction pattern is greater than a width of the top surface of the contact plug such that at least a portion of the bottom surface of the magnetic tunnel junction pattern vertically overlaps at least a portion of the top surface of the insulation pattern.

11. The device of claim 10 , wherein,
the first interlayer dielectric layer includes a top surface, and
the top surface of the first interlayer dielectric layer is substantially coplanar with the top surface of the insulation pattern.

12. The device of claim 10 , wherein,
the contact plug includes a first contact plug and a second contact plug, the first contact plug is in contact with the first barrier metal, and an upper sidewall of the second contact plug is in contact with the insulation pattern, and
the device further includes a second barrier metal that is interposed between the first contact plug and the second contact plug and between the first interlayer dielectric layer and a lower sidewall of the second contact plug.

13. A device, comprising:
a contact plug, the contact plug having a bottom surface, a lower sidewall, and an upper sidewall;
a first barrier metal covering the bottom surface of the contact plug and the lower sidewall of the contact plug, the first barrier metal exposing the upper sidewall of the contact plug;
an insulation pattern covering the upper sidewall of the contact plug; and
an amorphous conductive pad directly on the contact plug and the insulation pattern,
wherein the amorphous conductive pad is in direct contact with and covers an entire top surface of the contact plug and is in direct contact with at least a portion of a top surface of the insulation pattern.

14. The device of claim 13 , wherein,
the contact plug includes a first contact plug and a second contact plug, the first contact plug is in contact with the first barrier metal, and an upper sidewall of the second contact plug is in contact with the insulation pattern, and
the device further includes a second barrier metal that is interposed between the first contact plug and the second contact plug and between a first interlayer dielectric layer and a lower sidewall of the second contact plug.

15. The device of claim 13 , further comprising:
a magnetic tunnel junction pattern covering a top surface of the amorphous conductive pad.

16. The device of claim 13 , wherein,
all of the contact plug, the first barrier metal, and the insulation pattern are in a contact hole of a first interlayer dielectric layer.

17. The device of claim 13 , wherein the insulation pattern has a substantially same thickness as a thickness of the first barrier metal.

18. The device of claim 10 , further comprising:
an amorphous conductive pad between the magnetic tunnel junction pattern and the contact plug,
wherein the amorphous conductive pad covers an entire top surface of the contact plug and is in contact with at least a portion of a top surface of the insulation pattern.

Assignees

• Ko Seung Pil
• Suh Kiseok
• Lee Kilho
• Jeong Daeeun
• Samsung Electronics Co Ltd

Inventors

• Ko Seung Pil
• Suh Kiseok
• Lee Kilho
• Jeong Daeeun

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/082

  the openings being tapered via holes · CPC title

• H10W20/076 Primary

  in via holes or trenches · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title