Nanocluster production device

Patent metadata

Field	Value
Publication number	US-10283333-B2
Application number	US-201414893775-A
Country	US
Kind code	B2
Filing date	May 26, 2014
Priority date	May 29, 2013
Publication date	May 7, 2019
Grant date	May 7, 2019

Abstract

Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

First claim

The invention claimed is:

1. A nanocluster production apparatus comprising:
a vacuum chamber;
a sputtering source comprising a target as a cathode within the vacuum chamber, the sputtering source generates plasma by pulsed discharge;
an anode in which the sputtering source is positioned within;
a pulse power supply that supplies a pulsed power to the sputtering source;
a first inert gas supply device that supplies a first inert gas directly inside the anode to the sputtering source;
a cluster growth cell within the vacuum chamber; and
a second inert gas introduction device that introduces a second inert gas directly into the cluster growth cell but at a location outside the anode, so that sputtered particles originating from the sputtering source are entrained in a flow of the second inert gas, the second gas serving as a coolant gas for cooling a sputtered particle injected from the sputtering source, the second inert gas different from the first inert gas; wherein
the sputtering source, target, and anode all being housed within the cluster growth cell,
a sputtering surface of the target and an inner surface of the cluster growth cell define a cluster growth space for causing a growth of nanoclusters,
the cluster growth cell has a beam extraction aperture configured to extract the nanoclusters produced in the cluster growth cell as a beam,
the nanocluster production apparatus has a gate outside the cluster growth cell that permits or prohibits the extraction of the beam from the beam extraction aperture, wherein permitting is by having zero applied voltage to the gate and prohibiting is by having an applied potential to the gate and further
comprising a controller configured to set a timing of the gate for switching between a permission and a prohibition of the extraction of the beam from the beam extraction aperture, wherein the timing of the gate for switching is synchronized with every start timing of supply of the pulsed power to the sputtering source.

2. The nanocluster production apparatus as in claim 1 , wherein the controller controls the pulse power supply to vary a duty ratio of the pulsed power and a peak discharge power.

3. The nanocluster production apparatus as in claim 2 , wherein the controller varies at least one of the duty ratio of the pulsed power and the peak discharge power according to at least one of length of the cluster growth space defined by distance from the sputtering surface of the target to the beam extraction aperture and a temperature and pressure of the second inert gas in the cluster growth cell.

4. The nanocluster production apparatus as in claim 2 , wherein the controller controls the pulse power supply to vary repetition rate of the pulsed power.

5. The nanocluster production apparatus as in claim 4 , wherein the controller varies at least one of the duty ratio of the pulsed power and the peak discharge power according to at least one of length of the cluster growth space defined by distance from the sputtering surface of the target to the beam extraction aperture and a temperature and pressure of the second inert gas in the cluster growth cell.

6. The nanocluster production apparatus as in claim 1 , wherein the controller sets a period for permitting the extraction of the beam and a period for prohibiting the extraction of the beam from the beam extraction aperture as a regular pattern synchronized with the pulsed discharge and repeats the permission and the prohibition of the extraction of the beam from the beam extraction aperture according to the set pattern and in synchronization with a repetition period of the pulsed power.

7. The nanocluster production apparatus as in claim 1 , wherein the controller varies the timing for switching between the permission and the prohibition of the extraction of the beam, thereby controlling at least one of a size and a structure of the nanoclusters extracted through the beam extraction aperture.

8. The nanocluster production apparatus as in claim 1 , wherein the gate permits or prohibits the extraction of the beam from the beam extraction aperture with an electric field, a magnetic field or an electromagnetic field.

9. The nanocluster production apparatus as in claim 1 , wherein the gate prohibits or permits the extraction of the beam from the beam extraction aperture by changing, blocking or unblocking a flight trajectory of the beam.

10. The nanocluster production apparatus as in claim 1 , further comprising another gate installed inside the cluster growth cell for permitting or prohibiting the passage of the nanoclusters.

11. The nanocluster production apparatus as in claim 1 , wherein the first inert gas is an argon gas.

12. The nanocluster production apparatus as in claim 1 , wherein the second inert gas is a helium gas.

13. The nanocluster production apparatus as in claim 1 , wherein the first inert gas supply device has a gas injector for the first inert gas, and
the controller controls the sputtering source and the gas injector such that the gas injector injects the first inert gas intermittently and such that a period, in which the pulse discharge occurs in the sputtering source, is included in a period, in which the gas injector injects the first inert gas.

14. The nanocluster production apparatus as in claim 13 , wherein the controller supplies a power to the gas injector according to an injection signal, which is a pulsed electric signal, thereby driving the gas injector to inject the first inert gas,
the controller constructs the injection signal with a group of a plurality of pulse signals, and
the controller varies a duty ratio or frequency of the plurality of pulse signals in the group constructing the injection signal.

15. The nanocluster production apparatus as in claim 1 , wherein the controller supplies a pulsed power to the sputtering source according to a sputtering signal, which is a pulsed electric signal,
the controller constructs the sputtering signal with a group of a plurality of pulse signals, and
the controller varies a duty ratio or frequency of the plurality of pulse signals in the group constructing the sputtering signal.

Assignees

• Japan Science & Tech Agency
• Ayabo Corp

Inventors

• Nakajima Atsushi
• Tsunoyama Hironori
• Zhang Chuhang
• Akatsuka Hiroki
• Tsukamoto Keizo

Classifications

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J2237/0812

  Ionized cluster beam [ICB] sources · CPC title

• H01J37/3467 Primary

  Pulsed operation, e.g. HIPIMS · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title