HiPIMS layering

Patent metadata

Field	Value
Publication number	US-9416441-B2
Application number	US-201214357003-A
Country	US
Kind code	B2
Filing date	Oct 26, 2012
Priority date	Nov 9, 2011
Publication date	Aug 16, 2016
Grant date	Aug 16, 2016

Abstract

The present invention relates to a method for the vapor deposition of PVD layer systems by means of sputtering on at least one substrate, wherein the layer system comprises at least a first layer, characterized in that, at least in one step of the method, a HiPIMS method is used with a power density of at least 250 W/Cm 2 , wherein a pulse length with a duration of at least 5ms is used while a substrate bias is applied to the substrate.

First claim

What is claimed is:

1. Method for depositing PVD layer systems by vapor deposition by means of sputtering on at least one substrate, wherein the layer system comprises at least a first layer and a second layer, said first and second layers being deposited by using a HiPIMS method which enables operating at least two partial cathodes and attaining power densities of 250 W/cm 2 or higher and impulse length durations of 5 ms or longer, characterized in that the method comprises the deposition of the first or the deposition of the second HiPIMS layer by applying power impulses having impulse length with a duration of at least 5 ms for attaining a power density of at least 250 W/cm 2 whilst on the substrate a substrate bias is applied, and wherein, for the deposition of another of the first or second HiPIMS layer, power impulses having impulse length with shorter duration are used, so that the morphology of the HiPIMS layer deposited by using power impulses having impulse length with longer duration differs from the morphology of the HiPIMS layer deposited by using power impulses having impulse length with shorter duration, wherein the longer duration and the shorter duration are chosen in such a manner that the layer deposited by using the longer duration of the impulse length shows a coarser morphology than the layer that was deposited using shorter impulse length and in this manner the PVD layer system comprises a coarser-grained layer and a finer-grained layer, where the coarser-grained layer is the layer showing the coarser morphology.

2. Method according to claim 1 , characterized in that the PVD layer systems comprises a multiplicity of HiPIMS deposited finer-grained layers and coarser-grained layers which are deposited alternate forming an alternating layer system.

3. Method according to claim 1 , characterized in that the duration of the impulse length is varied at least one time steadily in order to attain a gradual transition between two layers having respectively finer-grained and coarser-grained morphology.

4. Method according to claim 1 , characterized in that height of the power impulses is at least one time varied.

5. Method according to claim 4 , characterized in that the height of the power impulses is at least at times varied in order to choose a low impulse height which yields layer areas with columnar growth.

6. Method according to claim 1 , characterized in that the power density does not exceed 2000 W/cm 2 .

7. Method according to claim 1 , characterized in that the impulse length is made to vary during the method, which causes the layer system with HiPIMS layers of different morphology to be generated, wherein the impulse length is made to vary in such a manner that the transition between the layers of different morphology is at least once a gradual transition.

Assignees

• Oerlikon Surface Solutions Ag Trubbach
• Oerlikon Surface Solutions Ag Pfaffikon

Inventors

• Krassnitzer Siegfried
• Lechthaler Markus

Classifications

• C23C14/345

  using substrate bias · CPC title

• C23C14/3485

  using pulsed power to the target · CPC title

• C23C14/35 Primary

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• H01J37/3467

  Pulsed operation, e.g. HIPIMS · CPC title

• H01J37/34

  operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34}) · CPC title