Process for forming a film on a substrate using multi-port injection assemblies

Patent metadata

Field	Value
Publication number	US-10262859-B2
Application number	US-201815863340-A
Country	US
Kind code	B2
Filing date	Jan 5, 2018
Priority date	Mar 24, 2016
Publication date	Apr 16, 2019
Grant date	Apr 16, 2019

Abstract

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on individual injection ports of the gas distribution system. The gas distribution may allow for varied tunability of the film properties.

First claim

What is claimed is:

1. A process for forming a film on a substrate, comprising:
providing a reaction chamber, the reaction chamber holding a substrate to be processed;
providing a first multiple port injector assembly, the first multiple port injector assembly comprising a first plurality of individual port injectors for providing a first gas from a first gas source to the substrate;
providing a second multiple port injector assembly, the second multiple port injector assembly comprising a second plurality of individual port injectors for providing a second gas from a second gas source to the substrate;
flowing the first gas onto the substrate with the first multiple port injector assembly; and
flowing the second gas onto the substrate with the second multiple port injector assembly, wherein one or more of:
the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors, and
the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors;

wherein a substantially uniform distribution of the first gas and the second gas across the substrate is achieved; and
wherein a reaction takes place between the first gas and the second gas on the substrate to form a first film.

2. The process of claim 1 , wherein the first gas comprises at least one of: dichlorosilane (DCS); silane (SiH 4 ); disilane (Si 2 H 6 ); trisilane (Si 3 H 8 ); trichlorosilane (TCS); hydrochloric acid (HCl); hydrogen (H 2 ); or nitrogen (N 2 ).

3. The process of claim 1 , wherein the second gas comprises at least one of: phosphine (PH 3 ); germane (GeH 4 ); digermane (Ge 2 H 6 ); diborane (B 2 H 6 ); CH 4 ; mono-methylsilane (MMS); tin chloride (SnCl 4 ); tin hydride; hydrochloric acid (HCl); chlorine (Cl 2 ); hydrogen (H 2 ); or nitrogen (N 2 ).

4. The process of claim 1 , wherein the reaction chamber performs a selective process on the substrate.

5. The process of claim 4 , wherein the selective process comprises a cyclic deposition and etching (CDE) process.

6. The process of claim 4 , wherein the selective process comprises a co-flow of the first gas and the second gas.

7. The process of claim 4 , wherein the selective process comprises a selective epitaxial growth (SEG) process.

8. The process of claim 1 , wherein the reaction chamber performs a non-selective process on the substrate.

9. The process of claim 1 , wherein a pressure of the reaction chamber ranges between 1 torr and 760 torr, or between 500 torr and 760 torr.

10. The process of claim 1 , wherein a temperature of the reaction chamber ranges between 100° C. and 800° C., or between 150° C. and 500° C.

11. The process of claim 1 , wherein the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors and the asymmetric bias of the first plurality of individual port injectors comprises a first number of individual port injectors flowing the first gas and a second number of individual port injectors not flowing the first gas.

12. The process of claim 1 , wherein the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors and the asymmetric bias of the second plurality of individual port injectors comprises a third number of individual port injectors flowing the second gas and a fourth number of individual port injectors not flowing the second gas.

13. A process for forming a film on a substrate, comprising:
providing a reaction chamber, the reaction chamber holding a substrate to be processed;
providing a first multiple port injector assembly, the first multiple port injector assembly comprising a first plurality of individual port injectors for providing a first gas from a first gas source to the substrate;
providing a second multiple port injector assembly, the second multiple port injector assembly comprising a second plurality of individual port injectors for providing a second gas from a second gas source to the substrate;
flowing the first gas onto the substrate with the first multiple port injector assembly, wherein the first multiple port injector assembly has an asymmetric bias of the first plurality of individual port injectors; and
flowing the second gas onto the substrate with the second multiple port injector assembly, wherein the second multiple port injector assembly has an asymmetric bias of the second plurality of individual port injectors;
wherein a substantially uniform distribution of the first gas and the second gas across the substrate is achieved; and
wherein a reaction takes place between the first gas and the second gas on the substrate to form the film.

14. The process of claim 13 , wherein the asymmetric bias of the first plurality of individual port injectors comprises a first number of individual port injectors flowing the first gas and a second number of individual port injectors not flowing the first gas.

Assignees

• Asm Ip Holding Bv

Inventors

• Margetis Joe
• Tolle John
• Bartlett Gregory
• Bhargava Nupur

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3412

  including tin · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3408

  Silicon carbide · CPC title