Device layer thin-film transfer to thermally conductive substrate

Patent metadata

Field	Value
Publication number	US-10243091-B2
Application number	US-201815944222-A
Country	US
Kind code	B2
Filing date	Apr 3, 2018
Priority date	Dec 18, 2015
Publication date	Mar 26, 2019
Grant date	Mar 26, 2019

Abstract

A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate.

First claim

What is claimed is:

1. A semiconductor structure, comprising:
a thin-film device layer;
an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and
a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K.

2. The semiconductor structure of claim 1 , wherein the thin-film device layer is silicon carbide.

3. The semiconductor structure of claim 2 , wherein the surrogate substrate is permanently attached to the thin film device layer by a polymeric thermal interface material that is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K.

4. The semiconductor structure of claim 3 , wherein the surrogate substrate is permanently attached to the thin film device layer by polyimide with aluminum nitride nanoparticles.

5. The semiconductor structure of claim 3 , wherein the surrogate substrate is permanently attached to the thin film device layer by a layer of a metal, wherein the layer of the metal has a thickness such that the layer is effectively transparent at the application wavelength.

6. The semiconductor structure of claim 2 , wherein the surrogate substrate is silicon carbide.

7. The semiconductor structure of claim 2 , wherein the surrogate substrate is one of diamond, sapphire, zinc oxide, magnesium oxide and polycrystalline silicon carbide.

8. The semiconductor structure of claim 2 , wherein surrogate substrate is one of diamond, sapphire, zinc oxide, magnesium oxide and polycrystalline silicon carbide with an epitaxial layer of silicon carbide on a surface of the surrogate substrate that bonds with the thin-film device layer.

9. The semiconductor structure of claim 2 , wherein the surrogate substrate includes a via that extends at least partly through the surrogate substrate, wherein a location of the via in the surrogate substrate is selected to coincide with a location of the optoelectronic device in the thin-film device layer to facilitate light reaching the optoelectronic device.

10. The semiconductor structure of claim 1 , wherein the application wavelength is between 500nm and 800nm.

Assignees

• IBM

Inventors

• Dang Bing
• Knickerbocker John U
• Wright Steven Lorenz
• Tsang Yang Cornelia

Classifications

• H01J1/30

  Cold cathodes, e.g. field-emissive cathode · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/1892

  Electricity · mapped topic

• H01L31/1896

  Electricity · mapped topic

• H01L31/024 Primary

  Electricity · mapped topic