Device layer thin-film transfer to thermally conductive substrate

Patent metadata

Field	Value
Publication number	US-10032943-B2
Application number	US-201514974643-A
Country	US
Kind code	B2
Filing date	Dec 18, 2015
Priority date	Dec 18, 2015
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate. A method of fabricating the semiconductor structure includes fabricating the optoelectronic device in a device layer thin-film of SiC on a silicon wafer of a first diameter, transferring the device layer thin-film of SiC from the silicon wafer, and permanently bonding the device layer thin-film to a SiC surrogate substrate of a second diameter.

First claim

What is claimed is:

1. A method of fabricating a semiconductor structure, comprising the steps of:
providing a substrate in a form of a first wafer;
growing an epitaxial layer of a material that is optically transparent and thermally conductive on the substrate;
building at least one microelectronic device in the epitaxial layer;
temporarily attaching the substrate to a handler using a removable/degradable adhesive;
removing substantially all the substrate;
applying a permanent adhesive to one of:
the epitaxial layer, and
a wafer of a surrogate substrate that is optically transparent and thermally conductive;

permanently bonding together the epitaxial layer and the surrogate substrate, thereby forming an intermediate structure; and
removing the handler and the removable/degradable adhesive from the intermediate structure, thereby forming the semiconductor structure.

2. The method of claim 1 , wherein the first wafer has a first diameter and the wafer of the surrogate substrate has a second diameter, and wherein the first diameter is substantially larger than the second diameter.

3. The method of claim 2 , wherein the first wafer is silicon.

4. The method of claim 3 , wherein the epitaxial layer is silicon carbide.

5. The method of claim 4 , wherein the at least one microelectronic device is an optoelectronic device that is excitable by light of an application wavelength.

6. The method of claim 5 , wherein the wafer of the surrogate substrate is optically transparent in the application wavelength and has a thermal conductivity of at least 300 W/m-K.

7. The method of claim 6 , wherein the wafer of the surrogate substrate is silicon carbide.

8. The method of claim 7 , wherein the epitaxial layer and the surrogate substrate are permanently bonded together by a material that is optically transparent in the application wavelength and has a thermal conductivity of at least 300 W/m-K.

Assignees

• IBM

Inventors

• Dang Bing
• Knickerbocker John U
• Wright Steven Lorenz
• YANG Cornelia Tsang

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01J1/30

  Cold cathodes, e.g. field-emissive cathode · CPC title

• H01L31/024 Primary

  Electricity · mapped topic

• H01L31/1896

  Electricity · mapped topic

• H10F71/1395

  for thin-film devices · CPC title