Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-10217613-B2
Application number	US-201615273812-A
Country	US
Kind code	B2
Filing date	Sep 23, 2016
Priority date	Dec 28, 2015
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

First claim

What is claimed is:

1. A plasma processing apparatus, comprising:
a processing chamber disposed inside a vacuum vessel and, in the processing chamber, a first gas is supplied and a first plasma for processing a wafer is generated using the first gas;
a stage disposed in the processing chamber and the wafer is mounted on an upper surface of the stage;
a ring-shaped member which is constituted of a dielectric material and is disposed on an outer peripheral portion of the stage and surroundinq the upper surface of the stage, the ring-shaped member defining a discharge space in which a second gas is supplied and a second plasma is generated using the second gas;
a vacuum evacuator which is coupled to the vacuum vessel and is configured to evacuate and decompress the inside of the processing chamber,
a first electrode which is disposed inside the stage and to which a first high frequency power source is electrically connected and a first high frequency power therefrom is supplied;
a second electrode and a third electrode which are disposed sandwiching the discharge space inside the ring-shaped member, where the second electrode is electrically connected to a second high frequency power source and supplied a second high frequency power therefrom, and the third electrode is connected to a ground potential;
wherein a surface of the ring-shaped member defines an opening which is in communication with the discharge space and the processing chamber and which is configured to supply particles of the second plasma into the processing chamber.

2. The plasma processing apparatus according to claim 1 ,
wherein the discharge space and each of the second and third electrodes are in a ring shape disposed along a circumferential direction of the ring-shaped member.

3. The plasma processing apparatus according to claim 1 ,
wherein the dielectric material is quartz.

4. The plasma processing apparatus according to claim 1 ,
wherein the first high frequency power source is electrically connected to the first electrode via a first matcher, and the second high frequency power source is electrically connected to the second electrode via a second matcher.

5. The plasma processing apparatus according to claim 4 ,
wherein the first matcher comprises a filter to remove a frequency component of the second high frequency power source, and
the second matcher comprises a filter to remove a frequency component of the first high frequency power source.

6. The plasma processing apparatus according to claim 1 ,
wherein the opening is configured by a slit disposed along a circumferential direction of the ring-shaped member.

7. The plasma processing apparatus according to claim 6 ,
wherein a width of the slit is narrower than a width of the discharge space along a radial direction of the ring-shaped member.

8. The plasma processing apparatus according to claim 1 ,
wherein a plurality of the openings are disposed separately along a circumferential direction of the ring-shaped member.

9. The plasma processing apparatus according to claim 1 , further comprising:
a plurality of flow paths through which the second gas is separately supplied to the inside of the discharge space in a circumferential direction of the ring-shaped member.

10. The plasma processing apparatus according to claim 1 , further comprising a fourth electrode which is provided between the first electrode and the second electrode in the ring-shaped member and is electrically connected to ground potential, wherein the second electrode is disposed between the first electrode and the discharge space in the ring-shaped member.

Assignees

• Hitachi High Tech Corp

Inventors

• Kawanabe Tetsuo
• Tandou Takumi
• Tetsuka Tsutomu
• Yasui Naoki

Classifications

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H01J37/32165

  Plural frequencies · CPC title

• C23C16/4585

  Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds · CPC title

• H01J37/32715

  Workpiece holder · CPC title

• C23C16/517

  using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 · CPC title