Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Patent metadata

Field	Value
Publication number	US-9852889-B1
Application number	US-201615190082-A
Country	US
Kind code	B1
Filing date	Jun 22, 2016
Priority date	Jun 22, 2016
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF signal to generate a modified RF signal, and a plasma chamber. The plasma chamber includes an edge ring and a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the modified RF signal. The coupling ring includes an electrode that generates a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the modified RF signal.

First claim

The invention claimed is:

1. A system for controlling directionality of ion flux at an edge region within a plasma chamber, comprising:
a first radio frequency (RF) generator that is configured to generate a first RF signal;
a first impedance matching circuit coupled to the first RF generator for receiving the first RF signal to generate a first modified RF signal; and
a plasma chamber including:
an edge ring; and
a coupling ring located below the edge ring and coupled to the first impedance matching circuit to receive the first modified RF signal, wherein the coupling ring includes an electrode configured to generate a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the first modified RF signal.

2. The system of claim 1 , further comprising:
a second RF generator configured to generate a second RF signal;
a second impedance matching circuit coupled to the second RF generator and configured to receive the second RF signal to generate a second modified RF signal; and
a chuck coupled to the second impedance matching circuit and configured to receive the second modified RF signal to change an impedance of plasma within the plasma chamber, wherein the chuck is located besides the edge ring and the coupling ring.

3. The system of claim 1 , wherein the electrode is embedded within the coupling ring, and is a wire mesh or a ring.

4. The system of claim 1 , further comprising:
a first insulator ring located below the coupling ring;
a second insulator ring located below the first insulator ring;
a cable extending through the second insulator ring, the first insulator ring, and a portion of the coupling ring to couple to the electrode, wherein a portion of the coupling ring between the electrode and the edge ring acts as a dielectric between the electrode and the edge ring.

5. The system of claim 4 , further comprising a ground ring located besides the first insulator ring.

6. The system of claim 1 , further comprising:
a coax cable of a power pin coupled to the electrode;
a feed ring coupled at a point to the coax cable; and
an RF rod coupled to the feed ring and the first impedance matching circuit.

7. The system of claim 1 , further comprising:
a probe located within the plasma chamber;
a sensor coupled to the probe and configured to measure a variable associated with ion flux;
a host computer system coupled to the sensor to determine based on the variable whether an amount of power supplied by the first RF generator to the electrode is to be modified,
wherein the host computer system is coupled to the first RF generator to change the amount of power supplied by the first RF generator to the electrode via the first impedance matching circuit.

8. A system for controlling directionality of ion flux at an edge region within a plasma chamber, comprising:
a first radio frequency (RF) filter that is configured to output a first filtered RF signal;
a second RF filter coupled to the first RF filter for receiving the first filtered RF signal to output a second filtered RF signal; and
a plasma chamber including:
an edge ring; and
a coupling ring located below the edge ring and coupled to the second RF filter, wherein the coupling ring includes an electrode configured to receive the second filtered RF signal to further generate a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the second filtered RF signal.

9. The system of claim 8 , further comprising:
an RF generator configured to generate an RF signal;
an impedance matching circuit coupled to the RF generator and configured to receive the RF signal to generate a modified RF signal; and
a chuck coupled to the impedance matching circuit and configured to receive the modified RF signal to change an impedance of plasma within the plasma chamber, wherein the chuck is located besides the edge ring and the coupling ring.

10. The system of claim 8 , wherein the electrode is embedded within the coupling ring and is a wire mesh or a ring.

11. The system of claim 8 , further comprising:
a first insulator ring located below the coupling ring;
a second insulator ring having a portion located below the first insulator ring;
a power pin extending through the second insulator ring, the first insulator ring, and a portion of the coupling ring to couple to the electrode, wherein a portion of the coupling ring between the electrode and the edge ring acts as a dielectric between the electrode and the edge ring.

12. The system of claim 11 , further comprising a ground ring located besides the first insulator ring.

13. The system of claim 8 , further comprising:
a coax cable of a power pin coupled to the electrode;
a feed ring coupled at a point to the coax cable; and
an RF rod coupled to the second RF filter that is coupled to the feed ring.

14. The system of claim 8 , further comprising:
a probe located within the plasma chamber;
a sensor coupled to the probe and configured to measure a variable associated with ion flux;
a host computer system coupled to the sensor to determine based on the variable whether a capacitance of the first RF filter is to be modified;
a motor coupled to the host computer system;
wherein the host computer system is configured to modify the capacitance of the first RF filter via the motor.

15. A system for controlling directionality of ion flux at an edge region within a plasma chamber, comprising:
a radio frequency (RF) filter that is configured to output a filtered RF signal;
a plasma chamber including:
an edge ring; and
a coupling ring located below the edge ring and coupled to the RF filter to receive the filtered RF signal, wherein the coupling ring includes an electrode configured to generate a capacitance between the electrode and the edge ring to control the directionality of the ion flux upon receiving the filtered RF signal.

16. The system of claim 15 , further comprising:
an RF generator configured to generate an RF signal;
an impedance matching circuit coupled to the RF generator and configured to receive the RF signal to generate a modified RF signal; and
a chuck coupled to the impedance matching circuit and configured to receive the modified RF signal to change an impedance of plasma within the plasma chamber, wherein the chuck is located besides the edge ring and the coupling ring.

17. The system of claim 15 , wherein the electrode is embedded within the coupling ring and is a wire mesh or a ring.

18. The system of claim 15 , further comprising:
a first insulator ring located below the coupling ring;
a second insulator ring having a portion located below the first insulator ring;
a power pin extending through the second insulator ring, the first insulator ring, and a portion of the coupling ring to couple to the electrode, wherein a portion of the coupling ring between the electrode and the edge ring acts as a dielectric between the electrode and the edge ring.

19. The system of claim 18 , further comprising a ground ring located besides the first insulator ring.

20. The system of claim 15 , further comprising:
a coax cable of a power pin coupled to the electrode; and
a feed ring coupled at a point to the coax cable.

21. The system of claim 15 , further comprising:
a probe located within the plasma chamber;
a sensor coupled to the probe and configured to measure a variable associated with ion flux;
a host computer system co

Assignees

• Lam Res Corp

Inventors

• Kellogg Michael C
• Marakhtanov Alexei
• Holland John Patrick
• Chen Zhigang
• Kozakevich Felix
• Lucchesi Kenneth

Classifications

• H01J37/32366

  Localised processing · CPC title

• H01J37/32642 Primary

  Focus rings · CPC title

• H01J37/32091

  the radio frequency energy being capacitively coupled to the plasma · CPC title

• H01J2237/32

  Processing objects by plasma generation · CPC title

• H01J37/32431 Primary

  Constructional details of the reactor · CPC title