Apparatus for cutting substrate and system for processing same

Patent metadata

Field	Value
Publication number	US-10211105-B2
Application number	US-201715816247-A
Country	US
Kind code	B2
Filing date	Nov 17, 2017
Priority date	Feb 6, 2015
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

An apparatus for cutting a substrate is disclosed. The apparatus includes a main body containing a reactive solution and the substrate; and a catalytic cutting element disposed inside the main body and contacting one of at least two adjacent cutting peripheries of the substrate to conduct a chemical reaction to cut the substrate.

First claim

What is claimed is:

1. An apparatus for cutting a substrate, wherein the substrate includes at least two adjacent cutting peripheries defining therebetween a silicon wafer, the apparatus comprising:
a main body containing a reactive solution and the substrate; and
a catalytic cutting element disposed inside the main body, and contacting one of the at least two adjacent cutting peripheries to conduct a chemical reaction to cut the substrate, wherein the substrate has a surface, the catalytic cutting element includes an inner material and an outer material disposed on the surface, the outer material is a first metal used as a catalyst, and the inner material is a second metal which is different from the first metal.

2. The apparatus according to claim 1 , wherein the catalytic cutting element includes a metal wire acting as a catalyst and having a first material selected from a group consisting of a silver, a platinum, a copper, an iridium, a palladium, a gold, a stainless steel and a combination thereof.

3. The apparatus according to claim 1 , wherein the reactive solution includes an etching solution being one selected from a group consisting of a hydrofluoric acid, a sulfuric acid, a hydrochloric acid, a nitric acid and a combination thereof.

4. The apparatus according to claim 3 , further comprising a pressure source providing a pressure upon the substrate, wherein the etching solution cuts the substrate by using the metal wire.

5. The apparatus according to claim 1 , further comprising a counter electrode disposed inside the main body and opposite to the catalytic cutting element.

6. The apparatus according to claim 5 , further comprising a power supply connected to the catalytic cutting element and the counter electrode.

7. The apparatus according to claim 6 , wherein when the catalytic cutting element acts as an anode, the power supply supplies one of a constant voltage and a constant current to the catalytic cutting element to accelerate the chemical reaction, and when the catalytic cutting element acts as a cathode, the power supply supplies one of a constant voltage and a constant current to the catalytic cutting element to prevent the catalytic cutting element from corrosion.

8. The apparatus according to claim 1 , wherein the reactive solution further includes at least one of an oxidant and an etching accelerator.

9. The apparatus according to claim 8 , wherein the oxidant is one of a hydrogen peroxide and an ozone.

10. The apparatus according to claim 8 , wherein the etching accelerator is one selected from a group consisting of a glycine, a lysine, a copper sulfate, a copper nitrate, a copper chloride and a combination thereof.

11. The apparatus according to claim 1 , wherein the catalytic cutting element is one object selected from the group consisting of one-dimensional, two-dimensional and three-dimensional objects.

12. The apparatus according to claim 1 , wherein the catalytic cutting element has a surface formed of a metal selected from a group consisting of a silver, a platinum, a copper, an iridium, a palladium, a gold, a stainless steel and a combination thereof.

13. The apparatus according to claim 1 , wherein the substrate has a second material being one selected from a group consisting of a silicon, a sapphire, a silicon carbide and a gallium nitride.

14. The apparatus according to claim 1 , wherein the substrate is an ingot.

15. A system for processing a substrate, comprising:
a main body containing the substrate having a first surface; and
a catalytic die disposed inside the main body, and contacting the first surface to proceed with one of cutting the substrate and forming a pattern on the first surface, wherein the catalytic cutting element includes an inner material and an outer material disposed on the first surface, the outer material is a first metal used as a catalyst, and the inner material is a second metal which is different from the first metal.

16. The system according to claim 15 , further comprising a pressure source providing a pressure upon the first surface through the catalytic die.

17. The system according to claim 15 , further comprising a reactive solution cutting the substrate by using the catalytic die.

18. The system according to claim 17 , wherein the reactive solution includes an etching solution.

19. The system according to claim 15 , wherein the catalytic die is one object selected from the group consisting of one-dimensional, two-dimensional and three-dimensional objects.

20. The system according to claim 15 , wherein the catalytic die has a second surface formed of a metal selected from a group consisting of a silver, a platinum, a copper, an iridium, a palladium, a gold, a stainless steel and a combination thereof.

Assignees

• Univ Nat Taiwan Science & Technology

Inventors

• Hwang Bing-Joe
• Su Wei-Nien
• Jeng Jeng-Ywan
• Chu Yuan-Han
• Chiu Tse-Ming
• Teng Hsin-Fu

Classifications

• H10P50/642

  Chemical etching · CPC title

• H10P50/613

  of Group IV materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P50/617

  of Group III-V materials · CPC title