Resist sensitivity and profile improvement via acid anion control during field-guided post exposure bake
US-2017184976-A1 · Jun 29, 2017 · US
US10203604B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10203604-B2 |
| Application number | US-201614989488-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 6, 2016 |
| Priority date | Nov 30, 2015 |
| Publication date | Feb 12, 2019 |
| Grant date | Feb 12, 2019 |
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Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
Opening claim text (preview).
What is claimed is: 1. A substrate processing apparatus, comprising: a chamber body defining a processing volume; a pedestal disposed in the processing volume; one or more fluid sources coupled to the processing volume through the pedestal; a drain coupled to the processing volume through the pedestal; a first electrode coupled to the pedestal; a fluid containment ring coupled to the pedestal radially outward of the first electrode; a moveable stem disposed opposite the pedestal and extending through the chamber body; and a second electrode coupled to the stem. 2. The apparatus of claim 1 , wherein the one or more fluid sources comprise a process fluid source and a rinse fluid source. 3. The apparatus of claim 1 , wherein the fluid containment ring is formed from a ceramic material. 4. The apparatus of claim 1 , wherein the first electrode and the second electrode are formed from an electrically conductive metallic material. 5. The apparatus of claim 1 , wherein the first electrode is coupled to a vacuum source. 6. The apparatus of claim 1 , wherein the first electrode is coupled to one or more of a heat source, a power source, a temperature sensing apparatus, and a sensing apparatus. 7. The apparatus of claim 6 , wherein the second electrode is coupled to one or more of a heat source, a power source, a temperature sensing apparatus, and a sensing apparatus. 8. The apparatus of claim 1 , wherein a purge gas source is coupled to the processing volume through the stem and the second electrode. 9. A substrate processing apparatus, comprising: a chamber body defining a processing volume; a pedestal disposed in the processing volume; a drain coupled to the processing volume through the pedestal; a first electrode coupled to the pedestal; a fluid containment ring coupled to the pedestal radially outward of the first electrode; a moveable stem disposed opposite the pedestal and extending through the chamber body; a second electrode coupled to the stem; a dielectric containment ring coupled to the second electrode; and one or more fluid sources coupled to the processing volume through the dielectric containment ring. 10. The apparatus of claim 9 , wherein the one or more fluid sources comprise a process fluid source and a rinse fluid source. 11. The apparatus of claim 9 , wherein the fluid containment ring is formed from a ceramic material. 12. The apparatus of claim 9 , wherein the first electrode and the second electrode are formed from an electrically conductive metallic material. 13. The apparatus of claim 9 , wherein the first electrode is coupled to a vacuum source. 14. The apparatus of claim 9 , wherein the first electrode is coupled to one or more of a heat source, a power source, a temperature sensing apparatus, and a sensing apparatus. 15. The apparatus of claim 14 , wherein the second electrode is coupled to one or more of a heat source, a power source, a temperature sensing apparatus, and a sensing apparatus. 16. The apparatus of claim 9 , wherein a purge gas source is coupled to the processing volume through the stem and the dielectric containment ring.
characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title
mainly by conduction · CPC title
Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title
Treatment after imagewise removal, e.g. baking · CPC title
Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title
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