Copper electroplating baths and electroplating methods capable of electroplating megasized photoresist defined features

Patent metadata

Field	Value
Publication number	US-10190228-B2
Application number	US-201715451547-A
Country	US
Kind code	B2
Filing date	Mar 7, 2017
Priority date	Mar 29, 2016
Publication date	Jan 29, 2019
Grant date	Jan 29, 2019

Abstract

Copper electroplating baths and methods enable the plating of photoresist defined megafeatures at high current densities which have substantially uniform morphology and reduced nodule development. The copper electroplating baths include a mixture of heterocyclic nitrogen containing copolymers which provide megafeatures having a good % TIR and % WID balance.

First claim

What is claimed is:

1. A method comprising:
a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures;
b) providing a copper electroplating bath comprising one or more sources of copper ions, one or more electrolytes, wherein the electrolytes comprise an acid or a mixture of acids and, optionally, a source of halide ions; one or more accelerators; one or more suppressors; one or more first reaction products consisting of a bisepoxide and an aromatic amino acid compound having a formula:

wherein R 1 and R 2 are independently chosen from hydrogen, —NH 2 and —OH; E is nitrogen or CR 3 ; G is nitrogen or CR 4 and Z is nitrogen or CR 5 with the proviso that only one of E, G and Z is a nitrogen at the same time and R 3 , R 4 and R 5 are independently chosen from hydrogen, —NH 2 and —OH with the proviso that at least one of R 1 , R 2 , R 3 , R 4 and R 5 is —NH 2 ; and one or more second reaction products consisting of an imidazole with an epoxide;

c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and
d) electroplating a plurality of copper photoresist defined megapillars in the plurality of apertures, wherein the megapillars have aspect ratios of 3:1 to 1:1, and the plurality of copper photoresist defined megapillars comprise an average % TIR of −5% to +15%.

2. The method of claim 1 , wherein the bisepoxide has a formula:

wherein R 6 and R 7 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, A=O((CR 8 R 9 ) m O) n , (CH 2 ) y or a chemical bond, each R 8 and R 9 is independently chosen from hydrogen, methyl, or hydroxyl, m=1-6, n=1-20 and y=0-6 and when y=0, A is the chemical bond.

3. The method of claim 2 , wherein the bisepoxide has a formula:

wherein R 6 and R 7 are independently chosen from hydrogen and (C 1 -C 4 )alkyl, R 8 and R 9 are chosen from hydrogen, methyl or hydroxyl, m=1-6 and n=1.

4. The method of claim 1 , wherein the imidazole has a formula:

wherein R 10 , R 11 and R 12 are independently chosen from hydrogen, linear or branched (C 1 -C 10 )alkyl, hydroxyl, linear or branched alkoxy, linear or branched ydroxyl(C 1 -C 10 )alkyl, linear or branched alkoxy(C 1 -C 10 )alkyl, linear or branched, carboxy(C 1 -C 10 )alkyl, linear or branched amino(C 1 -C 10 )alkyl, substituted or unsubstituted phenyl where the substituents are chosen from hydroxyl, ydroxyl(C 1 -C 3 )alkyl, and (C 1 -C 3 )alkyl.

5. The method of claim 1 , wherein the epoxide has a formula:

wherein Y is hydrogen or (C 1 -C 4 )alkyl, X is CH 2 X 2 or (C 2 -C 6 )alkylene, X 1 is hydrogen or (C 1 -C 5 )alkyl and X 2 is halogen, O(C 1 -C 3 )alkyl or O(C 1 -C 3 )haloalkyl.

6. The method of claim 1 , wherein a weight ratio of the one or more first reaction products to the second reaction products 5:1 to 40:1 in the copper electroplating bath.

7. The method of claim 1 , wherein electroplating is performed at a current density of 5 ASD to 50 ASD.

8. The method of claim 1 , wherein the plurality of the copper photoresist defined megapillars have a height of at least 50 μm.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Thorseth Matthew
• HAZEBROUCK Rebecca
• Scalisi Mark
• Niazimbetova Zuhra
• Dziewiszek Joanna

Classifications

• C25D3/38 Primary

  of copper · CPC title

• C25D5/022 Primary

  using masking means · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• C25D7/00

  Electroplating characterised by the article coated · CPC title

• C25D21/12

  Process control or regulation (controlling or regulating in general G05) · CPC title