Plating method, plated component, and plating system

Patent metadata

Field	Value
Publication number	US-10179950-B2
Application number	US-201615184215-A
Country	US
Kind code	B2
Filing date	Jun 16, 2016
Priority date	Jun 19, 2015
Publication date	Jan 15, 2019
Grant date	Jan 15, 2019

Abstract

Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39 , which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.

First claim

We claim:

1. A plating method, comprising:
forming a recess at a position of a substrate where a silicon-through electrode is to be formed;
forming, by performing a first electroless plating, a first electroless plating layer made of cobalt or a cobalt alloy on a surface of the recess, said first electroless plating being performed only once to form the first electroless plating layer; and
forming, by performing a second electroless plating, a second electroless plating layer made of an alloy of a copper and a nickel on an upper surface of the first electroless plating layer such that the first electroless plating layer is suppressed from being eroded by a copper and an adhesivity between the first electroless plating layer and the second electroless plating layer is enhanced; and
forming an electrolytic plating layer made of a copper on a surface of the second electroless plating layer,
wherein after the electrolytic plating layer is formed on the surface of the second electroless plating, the second electroless plating layer serves as a buffer layer.

2. The plating method of claim 1 ,
wherein the first electroless plating layer is a barrier layer configured to suppress diffusion of copper.

3. The plating method of claim 1 ,
wherein the second electroless plating layer is a seed layer for forming an electrolytic plating layer of copper on a surface thereof.

4. A plated component, comprising:
a recess formed at a position of a substrate where a silicon-through electrode is to be formed;
a first electroless plating layer made of cobalt or a cobalt alloy formed on a surface of the recess formed by performing a first electroless plating, said first electroless plating being performed only once to form the first electroless plating layer;
a second electroless plating layer made of an alloy of a copper and a nickel and formed on an upper surface of the first electroless plating layer by performing a second electroless plating such that the first electroless plating layer is suppressed from being eroded by a copper and an adhesivity between the first electroless plating layer and the second electroless plating layer is enhanced; and
an electrolytic plating layer made of a copper and formed on a surface of the second electroless plating layer,
wherein after the electrolytic plating layer is formed on the surface of the second electroless plating, the second electroless plating layer serves as a buffer layer.

5. The plated component of claim 4 ,
wherein the first electroless plating layer is a barrier layer configured to suppress diffusion of copper.

6. The plated component of claim 4 ,
wherein the second electroless plating layer is a seed layer for forming an electrolytic plating layer of copper on a surface thereof.

7. A plating system, comprising:
a recess forming apparatus configured to form a recess at a position of a substrate where a silicon-through electrode is to be formed;
a first electroless plating layer forming apparatus configured to form a first electroless plating layer made of cobalt or a cobalt alloy on a surface of the recess by performing a first electroless plating, said first electroless plating being performed only once to form the first electroless plating layer;
a second electroless plating layer forming apparatus configured to form a second electroless plating layer, which is made of an alloy of a copper and a nickel, on an upper surface of the first electroless plating layer by performing a second electroless plating such that the first electroless plating layer is suppressed from being eroded by a copper and an adhesivity between the first electroless plating layer and the second electroless plating layer is enhanced; and
an electrolytic plating layer forming apparatus configured to form an electrolytic plating layer made of a copper on a surface of the second electroless plating layer,
wherein after the electrolytic plating layer is formed on the surface of the second electroless plating, the second electroless plating layer serves as a buffer layer.

Assignees

• Tokyo Electron Ltd

Inventors

• Inatomi Yuichiro
• Tanaka Takashi
• Mizutani Nobutaka

Classifications

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/0425

  comprising multiple stacked seed or nucleation layers · CPC title

• H10W20/033

  in openings in dielectrics · CPC title