Method of cooling a composition using a hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system

US10176973B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10176973-B2
Application numberUS-201715411711-A
CountryUS
Kind codeB2
Filing dateJan 20, 2017
Priority dateMar 6, 2014
Publication dateJan 8, 2019
Grant dateJan 8, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate, damages on the downstream pump are avoided.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for cooling a composition, comprising: energizing an abating agent in a plasma source by applying RF power to an electrode disposed in a body of the plasma source, wherein the plasma source is disposed downstream of a vacuum processing chamber; forming a composition by reacting the energized abating agent with gases exiting the vacuum processing chamber; and flowing the composition through an exhaust cooling apparatus, wherein the exhaust cooling apparatus comprises a first end, a second end, and a cooling plate disposed between the first end and the second end, wherein the cooling plate comprises a plurality of holes and a major surface substantially perpendicular to an axis extending from the first end to the second end. 2. The method of claim 1 , wherein the abating agent is selected from the group consisting of CH 4 , H 2 O, H 2 , NF 3 , SF 6 , F 2 , HCl, HF, Cl 2 , HBr, O 2 , N 2 , O 3 , CO, CO 2 , NH 3 , N 2 O, and combinations thereof. 3. The method of claim 1 , wherein energizing the abating agent further comprises; forming a plasma. 4. The method of claim 1 , wherein the plasma source is coupled to the exhaust cooling apparatus. 5. The method of claim 1 , further comprising: flowing a coolant through the cooling plate. 6. The method of claim 5 , wherein the coolant is water. 7. A method for cooling a composition, comprising: energizing an abating agent in a plasma source by applying RF power to an electrode disposed in a body of the plasma source, wherein the plasma source is disposed downstream of a vacuum processing chamber; forming a composition by reacting the energized abating agent with gases exiting the vacuum processing chamber; and flowing the composition into an exhaust cooling apparatus, wherein the exhaust cooling apparatus comprises: a first end; a second end, wherein a cavity is formed between the first end and the second end; and a cooling plate disposed in the cavity, wherein the cooling plate comprises a plurality of holes and a major surface substantially perpendicular to an axis extending from the first end to the second end, wherein the composition is flowed through the plurality of holes. 8. The method of claim 7 , wherein the abating agent is selected from the group consisting of CH 4 , H 2 O, H 2 , NF 3 , SF 6 , F 2 , HCl, HF, Cl 2 , HBr, O 2 , N 2 , O 3 , CO, CO 2 , NH 3 , N 2 O, and combinations thereof. 9. The method of claim 7 , wherein energizing the abating agent comprises: forming a plasma from the abating agent. 10. The method of claim 7 , wherein the plasma source is coupled to the exhaust cooling apparatus. 11. The method of claim 7 further comprising: flowing a coolant through the cooling plate. 12. The method of claim 11 , wherein the coolant is water.

Assignees

Inventors

Classifications

  • containing silicon · CPC title

  • in the presence of a plasma [PECVD] · CPC title

  • Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

  • Hollow cathodes · CPC title

  • Shape · CPC title

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What does patent US10176973B2 cover?
Embodiments disclosed herein include a method for abating compounds produced in semiconductor processes. The method includes energizing an abating agent, forming a composition by reacting the energized abating agent with gases exiting a vacuum processing chamber, and flowing the composition through a plurality of holes formed in a cooling plate. By cooling the composition with the cooling plate…
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/32082. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).