Solder material, solder joint, and method of manufacturing the solder material

US10173287B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10173287-B2
Application numberUS-201415327510-A
CountryUS
Kind codeB2
Filing dateAug 29, 2014
Priority dateAug 29, 2014
Publication dateJan 8, 2019
Grant dateJan 8, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO 2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.

First claim

Opening claim text (preview).

The invention claimed is: 1. A solder material comprising: a solder layer composed of either a metal material containing an alloy including Sn content of 40% and more, or a metal material including Sn content of 100%; and a covering layer covering a surface of the solder layer, wherein the covering layer includes a SnO film which is formed outside the solder layer and a SnO 2 film which is formed outside the SnO film, a thickness of the covering layer is more than 0 nm and equal to or less than 4.5 nm, a yellow chromaticity in L*a*b* color space is equal to or less than 5.7, the solder material is a solder ball having a diameter of 1 to 1000 μm, and the solder ball is a sphere. 2. The solder material according to claim 1 , wherein the solder layer comprises 0% or more and less than 4% of Ag, 0% or more and less than 1% of Cu, 0 ppm or more and less than 5 ppm of P, and 0 ppm or more and less than 20 ppm of Ge. 3. The solder material according to claim 1 , wherein in order to make a contained amount of Sn equal to or more than 40%, (i) the solder layer contains a total amount of less than 1% of at least one element selected from the group consisting of Ni, Co, Fe, and Sb, or less than 1% of the respective elements and a total amount of less than 40% of at least one element selected from the group consisting of In and Bi, or less than 40% of either one of In and Bi and less than 20% of the other, or (ii) the solder layer contains a total amount of less than 1% of at least one element selected from the group consisting of Ni, Co, Fe, and Sb, or less than 1% of the respective elements, or a total amount of less than 40% of at least one element selected from the group consisting of In and Bi, or less than 40% of either one of In and Bi and less than 20% of the other. 4. The solder material according to claim 1 , wherein an alpha dose to be radiated is equal to or less than 0.0200 cph/cm 2 . 5. A method of manufacturing a solder material which is a spherical solder ball having a diameter of 1 to 1000 μm, wherein the method comprises: a solder-layer-forming step of forming a solder layer, wherein a solder layer composed of either a metal material containing an alloy including Sn content of 40% and more, or a metal material including Sn content of 100% is formed, and an oxide-film-forming step of forming a covering layer on a surface of the solder layer, wherein in the covering layer, a SnO film is formed outside the solder layer and a SnO 2 film is formed outside the SnO film, a thickness of the covering layer is more than 0 nm and equal to or less than 4.5 nm, and yellow chromaticity in L*a*b* color space of a surface of the covering layer is equal to or less than 5.7. 6. The method of manufacturing the solder material according to claim 5 , wherein in the oxide-film-forming step, O 2 —Ar plasma is discharged on the surface of the solder layer.

Assignees

Inventors

Classifications

  • only coatings of inorganic non-metallic material · CPC title

  • using ionised gases, e.g. ionitriding · CPC title

  • with the principal constituent melting at less than 400°C · CPC title

  • Aspects linked to processes or compositions used in powder metallurgy · CPC title

  • Selection of non-metallic compositions of coating materials either alone or conjoint with selection of soldering or welding materials · CPC title

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What does patent US10173287B2 cover?
Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material includin…
Who is the assignee on this patent?
Senju Metal Industry Co
What technology area does this patent fall under?
Primary CPC classification B23K35/262. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Jan 08 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).