Solder bump cleaning before reflow
US-9773744-B2 · Sep 26, 2017 · US
US10173287B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10173287-B2 |
| Application number | US-201415327510-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 29, 2014 |
| Priority date | Aug 29, 2014 |
| Publication date | Jan 8, 2019 |
| Grant date | Jan 8, 2019 |
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Official abstract text for this publication.
Provided is a solder material which enables a growth of an oxide film to be inhibited. A solder ball which is a solder material is composed of a solder layer and a covering layer covering the solder layer. The solder layer is spherical and is composed of a metal material containing an alloy including Sn content of 40% and more. Otherwise the solder layer is composed of a metal material including Sn content of 100%. In the covering layer, a SnO film is formed outside the solder layer, and a SnO 2 film is formed outside the SnO film. A thickness of the covering layer is preferably more than 0 nm and equal to or less than 4.5 nm. Additionally, a yellow chromaticity of the solder ball is preferably equal to or less than 5.7.
Opening claim text (preview).
The invention claimed is: 1. A solder material comprising: a solder layer composed of either a metal material containing an alloy including Sn content of 40% and more, or a metal material including Sn content of 100%; and a covering layer covering a surface of the solder layer, wherein the covering layer includes a SnO film which is formed outside the solder layer and a SnO 2 film which is formed outside the SnO film, a thickness of the covering layer is more than 0 nm and equal to or less than 4.5 nm, a yellow chromaticity in L*a*b* color space is equal to or less than 5.7, the solder material is a solder ball having a diameter of 1 to 1000 μm, and the solder ball is a sphere. 2. The solder material according to claim 1 , wherein the solder layer comprises 0% or more and less than 4% of Ag, 0% or more and less than 1% of Cu, 0 ppm or more and less than 5 ppm of P, and 0 ppm or more and less than 20 ppm of Ge. 3. The solder material according to claim 1 , wherein in order to make a contained amount of Sn equal to or more than 40%, (i) the solder layer contains a total amount of less than 1% of at least one element selected from the group consisting of Ni, Co, Fe, and Sb, or less than 1% of the respective elements and a total amount of less than 40% of at least one element selected from the group consisting of In and Bi, or less than 40% of either one of In and Bi and less than 20% of the other, or (ii) the solder layer contains a total amount of less than 1% of at least one element selected from the group consisting of Ni, Co, Fe, and Sb, or less than 1% of the respective elements, or a total amount of less than 40% of at least one element selected from the group consisting of In and Bi, or less than 40% of either one of In and Bi and less than 20% of the other. 4. The solder material according to claim 1 , wherein an alpha dose to be radiated is equal to or less than 0.0200 cph/cm 2 . 5. A method of manufacturing a solder material which is a spherical solder ball having a diameter of 1 to 1000 μm, wherein the method comprises: a solder-layer-forming step of forming a solder layer, wherein a solder layer composed of either a metal material containing an alloy including Sn content of 40% and more, or a metal material including Sn content of 100% is formed, and an oxide-film-forming step of forming a covering layer on a surface of the solder layer, wherein in the covering layer, a SnO film is formed outside the solder layer and a SnO 2 film is formed outside the SnO film, a thickness of the covering layer is more than 0 nm and equal to or less than 4.5 nm, and yellow chromaticity in L*a*b* color space of a surface of the covering layer is equal to or less than 5.7. 6. The method of manufacturing the solder material according to claim 5 , wherein in the oxide-film-forming step, O 2 —Ar plasma is discharged on the surface of the solder layer.
only coatings of inorganic non-metallic material · CPC title
using ionised gases, e.g. ionitriding · CPC title
with the principal constituent melting at less than 400°C · CPC title
Aspects linked to processes or compositions used in powder metallurgy · CPC title
Selection of non-metallic compositions of coating materials either alone or conjoint with selection of soldering or welding materials · CPC title
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