Under bump metallurgy (UBM) and methods of forming same
US-9793231-B2 · Oct 17, 2017 · US
US10165682B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10165682-B2 |
| Application number | US-201514979954-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 28, 2015 |
| Priority date | Dec 28, 2015 |
| Publication date | Dec 25, 2018 |
| Grant date | Dec 25, 2018 |
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Official abstract text for this publication.
A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
Opening claim text (preview).
What is claimed is: 1. A package comprising: a first conductive pad, with a plurality of openings penetrating through the first conductive pad, wherein all portions of the first conductive pad are electrically inter-coupled; a dielectric layer encircling the first conductive pad, wherein the dielectric layer comprises portions filling the plurality of openings; a first Under-Bump Metallurgy (UBM) comprising a first via portion extending into the dielectric layer to contact the first conductive pad; a solder region over and contacting the first UBM; and an integrated passive device, wherein the solder region bonds the first UBM to the integrated passive device. 2. The package of claim 1 further comprising: a plurality of redistribution lines underlying the first conductive pad; an encapsulating material underlying the plurality of redistribution lines; a through-via encapsulated in the encapsulating material; and a device die encapsulated in the encapsulating material. 3. The package of claim 1 , wherein the first conductive pad laterally extends beyond edges of the first UBM. 4. The package of claim 1 , wherein the plurality of openings is aligned to a ring, with the first conductive pad having an outer portion outside of the ring, and an inner portion inside the ring, and the first via portion has a bottom surface contacting a top surface of the inner portion of the first conductive pad. 5. The package of claim 1 , wherein the first UBM comprises a plurality of via portions contacting the first conductive pad, with the first via portion being one of the plurality of via portions. 6. The package of claim 1 , wherein the plurality of openings extends from a top surface of the first conductive pad to a bottom surface of the first conductive pad. 7. The package of claim 1 further comprising a second conductive pad, with an additional plurality of openings penetrating through the second conductive pad, and wherein the dielectric layer extends into the additional plurality of openings. 8. The package of claim 7 , wherein the first UBM further comprises a second via portion, with the second conductive pad contacting a bottom surface of the second via portion. 9. The package of claim 1 , wherein the integrated passive device comprises a first terminal and a second terminal, with the first UBM connected to the first terminal, and the package further comprises a second UBM connected to the second terminal. 10. The package of claim 1 , wherein the integrated passive device comprises a capacitor.
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wherein the coefficient of thermal expansion is important · CPC title
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