Semimetal compound of Pt and method for making the same

Patent metadata

Field	Value
Publication number	US-10132002-B2
Application number	US-201715642342-A
Country	US
Kind code	B2
Filing date	Jul 6, 2017
Priority date	Jul 13, 2016
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe 2 . The method comprises: providing a PtTe 2 polycrystalline material; placing the PtTe 2 polycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

First claim

What is claimed is:

1. A semimetal compound of Pt, wherein the semimetal compound of Pt is single crystal PtTe 2 .

2. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTe 2 is type-II Dirac semimetals.

3. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTe 2 has tilted Dirac cone.

4. The semimetal compound of Pt of claim 1 , wherein the single crystal PtTe 2 exhibits anomalous negative magnetoresistance.

5. A method for making semimetal compound of Pt, the method comprising:
placing a PtTe 2 polycrystalline material and a chemical transport medium in a reacting chamber;
evacuating the reacting chamber to be vacuum with a pressure lower than 10 Pa;
placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a first temperature from about 1200 degree Celsius to about 1000 degree Celsius and a second end opposite to the first end and in a second temperature from about 1000 degree Celsius to about 9000 degree Celsius, and the PtTe 2 polycrystalline material is located at the first end; and
keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

6. The method of claim 5 , wherein the chemical transport medium is selected from the group consisting of TeBr 4 , I 2 , Br 2 , Cl 2 , and SeCl 4 .

7. The method of claim 5 , wherein a concentration of the chemical transport medium is in a range from about 5 mg/mL to about 20 mg/mL.

8. The method of claim 5 , wherein the pressure is lower than 1 Pa.

9. The method of claim 5 , wherein the reacting chamber is a quartz tube having an open end and a sealed end opposite to the open end, and the PtTe 2 polycrystalline material is located at the sealed end.

10. The method of claim 9 , wherein the evacuating the reacting chamber comprises sealing the open end by fast heating.

11. The method of claim 9 , wherein the placing the reacting chamber in the temperature gradient comprises horizontally placing the quartz tube in a tubular furnace.

12. The method of claim 5 , wherein the PtTe 2 polycrystalline material is made by following steps:
placing pure Pt and pure Te in reacting room, wherein a molar ratio is Pt:Te=1:2;
evacuating the reacting room to be vacuum less than 10 Pa and sealing the reacting room;
heating the reacting room to a reacting temperature from 750 degree Celsius to 850 degree Celsius and keeping the reacting temperature for a period from about 50 hours to about 100 hours to obtain the PtTe 2 polycrystalline material; and
cooling the reacting room to room temperature at a cooling rate in a range from about 10 degree Celsius per hour to about 20 degree Celsius per hour.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhang Ke-Nan
• Yan Ming-Zhe
• Zhou shu-yun
• Wu Yang
• Fan Shou-Shan

Classifications

• C01B19/007

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

• C01P2006/42

  Magnetic properties · CPC title

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C30B29/46 Primary

  Sulfur-, selenium- or tellurium-containing compounds · CPC title

• C30B25/00

  Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth · CPC title