Electrically conductive thin films

Patent metadata

Field	Value
Publication number	US-9981850-B2
Application number	US-201514719428-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	May 27, 2014
Publication date	May 29, 2018
Grant date	May 29, 2018

Abstract

An electrically conductive film including a compound represented by Chemical Formula 1 and having a layered crystal structure:

MeCh 2   Chemical Formula 1

wherein, Me is Ru, Os, Re, Rh, Ir, Pd, Pt, Cu, Ag, or Au, and Ch is sulfur, selenium, tellurium, or a combination thereof.

First claim

What is claimed is:

1. An electrically conductive film comprising:
a compound represented by Chemical Formula 1 and having a layered crystal structure:
MeCh 2   Chemical Formula 1

wherein Me is Ir, Pd, Pt, Ag or Au, and Ch is tellurium,
wherein the electrically conductive film comprises a plurality of nanosheets comprising the compound of Chemical Formula 1 or the electrically conductive film is in the form of a continuous film comprising the compound of Chemical Formula 1,
wherein the electrically conductive film has a thickness of less than or equal to about 50 nanometers,
wherein the electrically conductive film has transmittance of greater than or equal to about 80% at a thickness of less than or equal to 50 nm for light having a wavelength of 550 nm,
wherein the compound of Chemical Formula 1 is PdTe 2 , AgTe 2 , IrTe 2 , PtTe 2 , AuTe 2 , or a combination thereof, and
wherein a product of α and ρ is less than or equal to about 30 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity value of the compound.

2. The electrically conductive film of claim 1 , wherein an oxide content of the electrically conductive film is less than about 2 weight percent, based on a total weight of the electrically conductive film.

3. The electrically conductive film of claim 1 , wherein the the electrically conductive film has an electrical conductivity of greater than or equal to about 10,000 Siemens per centimeter.

4. The electrically conductive film of claim 1 , wherein the electrically conductive film does not comprise an oxide layer on a surface thereof as observed by transmission electron microscopy.

5. The electrically conductive film of claim 1 , wherein the electrically conductive film has an electrical conductivity of greater than or equal to about 4300 Siemens per centimeter.

6. The electrically conductive film of claim 5 , wherein the electrically conductive film has an electrical conductivity after bending 180° around a rod having a diameter 10 millimeters which is about 80% to 100% of an electrical conductivity before the bending, when determined by a DC (constant current) four-probe method.

7. The electrically conductive film of claim 1 , wherein the layered crystal structure belongs to a hexagonal system and has a space group of P 3 m1.

8. The electrically conductive film of claim 1 , wherein the compound is monocrystalline.

9. The electrically conductive film of claim 1 , wherein the electrically conductive film comprises a plurality of nanosheets comprising the compound of Chemical Formula 1, and wherein the nanosheets contact one another to provide an electrical connection.

10. The electrically conductive film of claim 1 , wherein the electrically conductive film has a coverage of greater than or equal to about 50%, based on a total area of a substrate on which the film is disposed.

11. An electronic device comprising an electrically conductive film comprising a compound being represented by the following Chemical Formula 1 and having a layered crystal structure:
MeCh 2   Chemical Formula 1

wherein Me is Ir, Pd, Pt, Ag or Au, and Ch is tellurium,
wherein the electrically conductive film comprises a plurality of nanosheets comprising the compound of Chemical Formula 1 or the electrically conductive film is in the form of a continuous film comprising the compound of Chemical Formula 1,
wherein the electrically conductive film has a thickness of less than or equal to about 50 nanometers,
wherein the electrically conductive film has transmittance of greater than or equal to about 80% at a thickness of less than or equal to 50 nm for light having a wavelength of 550 nm,
wherein the compound of Chemical Formula 1 of the electrically conductive film comprises PdTe 2 , AgTe 2 , IrTe 2 , PtTe 2 , AuTe 2 , or a combination thereof, and
wherein a product of α and ρ is less than or equal to about 30 ohms per square, wherein α is an absorption coefficient of the compound for light having a wavelength of 550 nm and ρ is a resistivity value of the compound.

12. The electronic device of claim 11 , wherein the electrically conductive film has an electrical conductivity of greater than or equal to about 10,000 Siemens per centimeter.

13. The electronic device of claim 11 , wherein the electrically conductive film does not include an oxide layer on a surface thereof, as observed by transmission electron microscopy.

14. The electronic device of claim 11 , wherein the electrically conductive film has an electrical conductivity of greater than or equal to about 4300 Siemens per centimeter.

15. The electronic device of claim 11 , wherein the electrically conductive film comprises a plurality of nanosheets including the compound of Chemical Formula 1, wherein the nanosheets are arranged to provide an electrical connection.

16. The electronic device of claim 11 , wherein the electrically conductive film is in a form of a continuous film including the compound.

17. The electronic device of claim 11 , wherein the electronic device is a flat panel display, a touch screen panel, a solar cell, an e-window, an electrochromic mirror, a heat mirror, a transparent transistor, or a flexible display.

18. The electronic device of claim 11 , wherein the electrically conductive film has a coverage of greater than or equal to about 50%, based on a total area of a substrate on which the film is disposed.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Moon Kyoung-Seok
• Kim Sang Il
• Kim Se Yun
• Park Hee Jung
• Lee Hyosug
• Choi Jae-Young

Classifications

• H10P14/3432

  Tellurides · CPC title

• C01B19/04

  Binary compounds {including binary selenium-tellurium compounds (C01B19/004, C01B19/005, C01B19/007 take precedence)} · CPC title

• H01B1/06

  mainly consisting of other non-metallic substances · CPC title

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L21/02562

  Electricity · mapped topic