Optical device wafer processing method

Patent metadata

Field	Value
Publication number	US-10109527-B2
Application number	US-201615281404-A
Country	US
Kind code	B2
Filing date	Sep 30, 2016
Priority date	Oct 6, 2015
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

An optical device wafer processing method includes a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to a sapphire substrate along an area corresponding to each division line from the back side of the sapphire substrate in the condition where the focal point of the pulsed laser beam is set inside the sapphire substrate, thereby forming a plurality of shield tunnels arranged along the area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around the fine hole for shielding the fine hole. The optical device wafer processing method further includes a dividing step of applying an external force to the optical device wafer after performing a light emitting layer forming step, thereby dividing the optical device wafer along the division lines to obtain the individual optical device chips.

First claim

What is claimed is:

1. An optical device wafer processing method for dividing an optical device wafer into individual optical device chips along a plurality of crossing division lines, said optical device wafer being composed of a sapphire substrate and a light emitting layer formed on a front side of said sapphire substrate, said light emitting layer being partitioned by said division lines to define a plurality of separate regions where a plurality of optical devices are formed, said optical device wafer processing method comprising:
a shield tunnel forming step of applying a pulsed laser beam having a transmission wavelength to said sapphire substrate along an area corresponding to each division line from a back side of said sapphire substrate in a condition where the focal point of said pulsed laser beam is set inside said sapphire substrate, thereby forming a plurality of shield tunnels arranged along said area corresponding to each division line, each shield tunnel being composed of a fine hole and an amorphous region formed around said fine hole for shielding said fine hole;
a light emitting layer forming step of forming said light emitting layer on the front side of said sapphire substrate after performing said shield tunnel forming step, thereby obtaining said optical device wafer, wherein at least some portions of said light emitting layer are in contact with at least some of said shield tunnels; and
a dividing step of applying an external force to said optical device wafer after performing said light emitting layer forming step, thereby dividing said optical device wafer along said division lines to obtain said individual optical device chips corresponding to said optical devices, wherein said dividing step of applying an external force includes applying a bending load to the optical device wafer;
wherein each shield tunnel is formed in a condition where an unprocessed area having a predetermined thickness is left on the back side of said sapphire substrate in said shield tunnel forming step; and
said optical device wafer processing method further comprises an unprocessed area removing step of removing said unprocessed area after performing said light emitting layer forming step and before performing said dividing step.

2. The optical device wafer processing method according to claim 1 , wherein said focal point of said pulsed laser beam is set at a position below the back side of said sapphire substrate toward the front side by a distance of between 80 to 85 μm, thereby resulting in said predetermined thickness of said unprocessed area being between 5 and 10 μm thick.

3. The optical device wafer processing method according to claim 1 , wherein the bending load is applied to the optical device wafer via a bending load applying means that includes a plurality of rod-like parallel support members for supporting the optical device wafer and a plurality of pressing members for pressing the optical device wafer.

4. An optical device wafer processing method comprising:
a shield tunnel forming step of applying a laser beam having a transmission wavelength to a sapphire substrate having an orientation flat from a back side of the sapphire substrate in a condition where a focal point of the pulsed laser beam is set inside the sapphire substrate, the pulsed laser beam being applied parallel to the orientation flat, thereby forming a plurality of crossing shield tunnels in the sapphire substrate, each shield tunnel being composed of a fine hole and an amorphous region formed around said fine hole for shielding said fine hole;
a light emitting layer forming step of forming a light emitting layer on the front side of the sapphire substrate after performing said shield tunnel forming step, thereby obtaining said optical device wafer, the light emitting layer being partitioned by a plurality of crossing division lines formed corresponding to the crossing shield tunnels to define a plurality of separate regions where a plurality of optical devices are formed; and
a dividing step of applying an external force to said optical device wafer after performing said light emitting layer forming step, thereby dividing said optical device wafer along the division lines to obtain individual optical device chips corresponding to said optical devices, wherein said dividing step of applying an external force includes applying a bending load to the optical device wafer;
wherein each shield tunnel is formed in a condition where an unprocessed area having a predetermined thickness is left on the back side of the sapphire substrate in said shield tunnel forming step; and
said optical device wafer processing method further comprises an unprocessed area removing step of removing the unprocessed area after performing said light emitting layer forming step and before performing said dividing step.

5. The optical device wafer processing method according to claim 4 , wherein said focal point of said pulsed laser beam is set at a position below the back side of said sapphire substrate toward the front side by a distance of between 80 to 85 μm, thereby resulting in said predetermined thickness of said unprocessed area being between 5 and 10 μm thick.

6. The optical device wafer processing method according to claim 4 , wherein the bending load is applied to the optical device wafer via a bending load applying means that includes a plurality of rod-like parallel support members for supporting the optical device wafer and a plurality of pressing members for pressing the optical device wafer.

Assignees

• Disco Corp

Inventors

• Oba Ryugo
• Shotokuji Takumi
• Kirihara Naotoshi

Classifications

• H10P72/7402

  Wafer tapes, e.g. grinding or dicing support tapes · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10W90/00

  Package configurations · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title