Alternating hardmasks for tight-pitch line formation

Patent metadata

Field	Value
Publication number	US-10103022-B2
Application number	US-201715463659-A
Country	US
Kind code	B2
Filing date	Mar 20, 2017
Priority date	Mar 20, 2017
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

Methods of forming fins include forming mask fins on a protection layer over a seed layer. Seed layer fins are etched out of the seed layer. Self-assembled fins are formed by directed self-assembly on the seed layer fins. A three-color hardmask fin pattern that has hardmask fins of three mutually selectively etchable compositions is formed using the self-assembled fins as a mask. A region on the three-color hardmask fin pattern is masked, leaving one or more fins of a first color exposed. All exposed fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

First claim

What is claimed is:

1. A method of forming fins, comprising:
masking a region on a three-color hardmask fin pattern comprising fins of three mutually selectively etchable compositions, leaving one or more fins of a first color exposed;
etching away all exposed fins of the first color with a selective etch that does not remove fins of a second color or a third color;
etching away the mask and all fins of a second color; and
etching fins into a fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

2. The method of claim 1 , wherein forming the mask fins comprises:
forming mandrels on a first oxide layer above the protection layer;
forming a second oxide layer conformally over the mandrels;
etching back oxide anisotropically and etch away the mandrels; and
anisotropically etching the second oxide layer to form the mask fins.

3. The method of claim 1 , wherein forming the three-color hardmask fin pattern comprises:
forming fins of the first color on the fin base layer using the self-assembled fins as an etch mask;
depositing a second-color material around the fins of the first color;
etching away alternating fins of the first color, leaving gaps; and
forming fins of a third color in the gaps.

4. The method of claim 3 , wherein the self-assembled fins comprising fins of alternating polymer materials.

5. The method of claim 4 , wherein forming the fins of the first color further comprises:
etching away alternating self-assembled fins; and
etching down into a layer of first-color material around the remaining self-assembled fins to form fins of a first color, the fins of the first color having fin caps of differing heights.

6. The method of claim 5 , wherein the fin caps each comprise one or more dielectric layers, with different dielectric layers corresponding to different heights of the fin caps of the first color.

7. The method of claim 5 , further comprising etching the second-color material to a height lower than a height of the tallest remaining fin caps and greater than a height of the shortest remaining fin caps.

8. The method of claim 5 , wherein etching away alternating fins of the first color comprises etching away the fins of the first color having a greater-than-average height.

9. The method of claim 1 , wherein forming self-assembled fins comprises applying a block copolymer material having two molecular chains of similar or equal length, wherein one of the two molecular chains is attracted to the seed layer.

10. The method of claim 9 , wherein a first chain of the material comprises polystyrene and wherein a second chain of the material comprises poly(methyl methacrylate).

11. The method of claim 1 , further comprising:
masking a region on the three-color hardmask fin pattern, leaving one or more fins of the third color exposed; and
etching away all exposed fins of the third color with a selective etch that does not remove fins of the first color or the second color.

12. The method of claim 1 , further comprising:
forming mask fins on a protection layer over a seed layer;
etching seed layer fins out of the seed layer;
forming self-assembled fins by directed self-assembly on the seed layer fins; and
forming the three-color hardmask fin pattern using the self-assembled fins as a mask.

13. A method of forming a three-color hardmask fin pattern, comprising:
forming seed layer fins by etching down through a protection layer using fin masks;
forming self-assembled fins by directed self-assembly on the seed layer fins;
etching a layer of a first color using the self-assembled fins as a mask to form fins of a first color;
depositing a second-color material around the fins of the first color;
etching away fins of the first color, leaving at least one fin of the first color; and
forming fins of a third color in gaps left by etching away fins of the first color.

14. The method of claim 13 , wherein the self-assembled fins comprise alternating base materials.

15. The method of claim 14 , further comprising etching away every other self-assembled fin, leaving remaining self-assembled fins having fin caps of differing heights before etching the layer of the first color.

16. The method of claim 15 , wherein the fin caps each comprise one or more dielectric layers, with different dielectric layers corresponding to different heights of the fin caps.

17. The method of claim 15 , wherein forming self-assembled fins comprises applying a material having two molecular chains of similar or equal length, wherein one of the two molecular chains is attracted to the seed layer.

18. The method of claim 17 , wherein a first chain of the material comprises polystyrene and wherein a second chain of the material comprises poly(methyl methacrylate).

19. The method of claim 18 , wherein the protection layer comprises uncrosslinked polystyrene and the seed layer comprises crosslinked polystyrene.

20. The method of claim 15 , further comprising etching the second-color material to a height lower than a height of the tallest fin cap and greater than a height of the shortest fin cap.

Assignees

• IBM

Inventors

• Arnold John C
• Desilva Anuja E
• Felix Nelson M
• Liu Chi-Chun
• Mignot Yann A M
• Sieg Stuart A

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/696

  Process specially adapted to improve the resolution of the mask · CPC title

• H10P50/695 Primary

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title