Semiconductor laser device

Patent metadata

Field	Value
Publication number	US-10090636-B2
Application number	US-201615541515-A
Country	US
Kind code	B2
Filing date	Jan 7, 2016
Priority date	Jan 9, 2015
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23 , and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

First claim

The invention claimed is:

1. A semiconductor laser device comprising:
a plurality of semiconductor laser units that are capable of being independently driven; and
a spatial light modulator that is optically coupled to the semiconductor laser units,
wherein each of the semiconductor laser units includes
an active layer,
a pair of layers that has the active layer interposed therebetween, and
a diffractive lattice layer that is optically coupled to the active layer,

wherein the semiconductor laser units output laser beams along respective thickness directions,
wherein the spatial light modulator includes:
a liquid crystal layer,
a reflection film that is provided on a side opposite to the semiconductor laser units with respect to the liquid crystal layer,
a plurality of pixel electrodes that are two-dimensionally disposed, and
a common electrode that sandwiches the liquid crystal layer together with the pixel electrodes,

wherein a laser beam emitted from each of the semiconductor laser units is incident on the spatial light modulator and is modulated in accordance with a state of the liquid crystal layer based on the pixel electrodes,
wherein the laser beam reflected by the reflection film of the spatial light modulator and modulated is output to an outside from a light emitting surface of each of the semiconductor laser units again through each of the semiconductor laser units,
wherein the semiconductor laser device further comprises:
a ¼ wavelength plate that is disposed between the active layers of the semiconductor laser units and the reflection film, and
a polarizing plate that is disposed between the active layers of the semiconductor laser units and the light emitting surface,
wherein the semiconductor laser units are attached to the spatial light modulator,
wherein both of the active layer and the diffractive lattice layer are sandwiched by the clad layers, and
wherein the diffractive lattice layer includes a periodic structure in which a refractive index changes two-dimensionally.

2. The semiconductor laser device according to claim 1 ,
wherein a width of each of the pixel electrodes is equal to or less than half a width of each of the semiconductor laser units.

3. The semiconductor laser device according to claim 1 ,
wherein the plurality of semiconductor laser units include
a first semiconductor laser unit that outputs a laser beam having a first wavelength,
a second semiconductor laser unit that outputs a laser beam having a second wavelength, and
a third semiconductor laser unit that outputs a laser beam having a third wavelength, and
wherein the first, second, and third wavelengths are different from each other.

4. The semiconductor laser device according to claim 3 ,
wherein the plurality of semiconductor laser units include
a fourth semiconductor laser unit that outputs a laser beam having a fourth wavelength,
a fifth semiconductor laser unit that outputs a laser beam having a fifth wavelength, and
a sixth semiconductor laser unit that outputs a laser beam having a sixth wavelength, and
wherein the first, second, third, fourth, fifth, and sixth wavelengths are different from each other.

5. The semiconductor laser device according to claim 2 ,
wherein the plurality of semiconductor laser units include
a first semiconductor laser unit that outputs a laser beam having a first wavelength,
a second semiconductor laser unit that outputs a laser beam having a second wavelength, and
a third semiconductor laser unit that outputs a laser beam having a third wavelength, and
wherein the first, second, and third wavelengths are different from each other.

6. A semiconductor laser device comprising:
semiconductor laser units each comprising:
a first clad layer;
a second clad layer;
an active layer arranged between the first clad layer and the second clad layer; and
a diffractive lattice layer optically coupled to the active layer, arranged between the first clad layer and the second clad layer, and including a periodic structure in which a refractive index changes two-dimensionally;

a spatial light modulator attached to and optically coupled to the semiconductor laser units, comprising:
a liquid crystal layer;
a reflection film provided on a side opposite to the semiconductor laser units with respect to the liquid crystal layer;
pixel electrodes arranged two-dimensionally;
a common electrode that sandwiches the liquid crystal layer together with the pixel electrodes;

a ¼ wavelength plate disposed between the active layers of the semiconductor laser units and the reflection film; and
a polarizing plate disposed between the active layers of the semiconductor laser units and a light emitting surface of the semiconductor laser units.

7. The semiconductor laser device according to claim 6 ,
wherein a width of each of the pixel electrodes is equal to or less than half a width of each of the semiconductor laser units.

8. The semiconductor laser device according to claim 6 ,
wherein the semiconductor laser units comprise:
a first semiconductor laser unit that outputs a laser beam having a first wavelength,
a second semiconductor laser unit that outputs a laser beam having a second wavelength, and
a third semiconductor laser unit that outputs a laser beam having a third wavelength, and
wherein the first, second, and third wavelengths are different from each other.

9. The semiconductor laser device according to claim 8 ,
wherein the semiconductor laser units include:
a fourth semiconductor laser unit that outputs a laser beam having a fourth wavelength,
a fifth semiconductor laser unit that outputs a laser beam having a fifth wavelength, and
a sixth semiconductor laser unit that outputs a laser beam having a sixth wavelength, and
wherein the first, second, third, fourth, fifth, and sixth wavelengths are different from each other.

10. The semiconductor laser device according to claim 7 ,
wherein the plurality of semiconductor laser units include
a first semiconductor laser unit that outputs a laser beam having a first wavelength,
a second semiconductor laser unit that outputs a laser beam having a second wavelength, and
a third semiconductor laser unit that outputs a laser beam having a third wavelength, and
wherein the first, second, and third wavelengths are different from each other.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Takiguchi Yuu
• Hirose Kazuyoshi
• Nomoto Yoshiro
• Sugiyama Takahiro
• Kurosaka Yoshitaka

Classifications

• H01S5/04254

  characterised by the shape · CPC title

• H01S5/04253

  having specific optical properties, e.g. transparent electrodes · CPC title

• G02B30/25

  using polarisation techniques · CPC title

• G02F1/133553

  Reflecting elements (associated to illuminating devices G02F1/133605) · CPC title

• H01S5/4093

  Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion · CPC title