Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-9300111-B2
Application number	US-201414154556-A
Country	US
Kind code	B2
Filing date	Jan 14, 2014
Priority date	Feb 1, 2013
Publication date	Mar 29, 2016
Grant date	Mar 29, 2016

Abstract

A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a conductive substrate;
a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate;
a first electrode layer electrically connected to the first conductivity type semiconductor layer;
a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer;
a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate;
a conductive via extending from the first electrode layer and penetrating through the second conductivity type semiconductor layer and the active layer to be connected to an interior of the first conductivity type semiconductor layer, the passivation layer electrically insulating the conductive via from the active layer; and
an insulating layer electrically insulating the first electrode layer and the second electrode layer from each other, the first electrode layer being between the conductive substrate and the second electrode layer, and the insulating layer separating the passivation layer from the first electrode layer,
wherein the passivation layer, the second electrode, and the insulating layer are conformally stacked on each other and trace each other in a region adjacent to the lateral surface of the active layer of the light emitting laminate,
wherein the second electrode layer includes a protruding region, the protruding region protruding toward the lateral surface of the active layer of the light emitting laminate, and the passivation layer and the insulating layer being conformal on the protruding region of the second electrode layer, and
wherein an electrode pad is on a partial region of the second electrode layer, the partial region of the second electrode layer being horizontally spaced apart from the protruding region and extending away from the conductive via and from the protruding region of the second electrode layer.

2. The semiconductor light emitting device as claimed in claim 1 ,
wherein the electrode pad extends to an exterior of the light emitting laminate.

3. The semiconductor light emitting device as claimed in claim 1 , wherein the passivation layer is an etch stop layer having etching characteristics different from those of a semiconductor material in the light emitting laminate.

4. The semiconductor light emitting device as claimed in claim 1 , further comprising a second conductivity type ohmic electrode layer between the second conductivity type semiconductor layer and the second electrode layer.

5. The semiconductor light emitting device as claimed in claim 1 , further comprising a first conductivity type ohmic electrode layer between the first conductivity type semiconductor layer and the first electrode layer.

6. The semiconductor light emitting device as claimed in claim 1 , wherein the first and second conductivity type semiconductor layers are p-type and n-type semiconductor layers, respectively.

7. A semiconductor light emitting device, comprising:
a conductive substrate;
a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate;
a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer;
a first electrode layer between the conductive substrate and the second electrode layer;
a conductive via extended from the first electrode layer and passing through the second conductivity type semiconductor layer and the active layer to be connected to an interior of the first conductivity type semiconductor layer;
an insulating layer electrically insulating the conductive via from the second conductivity type semiconductor layer and the active layer, and electrically insulating the first electrode layer and the second electrode layer from each other;
an electrode pad on a region of the second electrode layer, the electrode pad extending to an exterior of the light emitting laminate; and
an etch stop layer between the active layer and the second electrode layer, the etch stop layer covering at least a lateral surface of the active layer of the light emitting laminate and having etching characteristics different from those of a semiconductor material in the light emitting laminate,
wherein the second electrode layer has a protruding region protruding toward the light emitting laminate, and at least a lateral surface of the active layer of the light emitting laminate being surrounded by the etch stop layer on an upper surface of the protruding region, and
wherein the protruding region protrudes toward the lateral surface of the active layer of the light emitting laminate, the etch stop layer and the insulating layer being conformal on opposite surfaces of the protruding region of the second electrode layer.

8. The semiconductor light emitting device as claimed in claim 7 , wherein the electrode pad is on a partial region of the second electrode layer and extended in a direction oriented away from the conductive via based on the protruding region of the second electrode layer.

9. The semiconductor light emitting device as claimed in claim 7 , wherein the etch stop layer directly contacts the conductive via, and is separated from the first electrode layer by the insulating layer.

10. The semiconductor light emitting device as claimed in claim 7 , further comprising:
a first conductivity type ohmic electrode layer disposed between the first conductivity type semiconductor layer and the first electrode layer; and
a second conductivity type ohmic electrode layer disposed between the second conductivity type semiconductor layer and the second electrode layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jong Ho
• Lim Chan Mook
• Shin Young Chul
• Jo Su Hyun

Classifications

• H01S5/02 Primary

  Structural details or components not essential to laser action · CPC title

• H10H20/018

  Bonding of wafers · CPC title

• H10H20/8312 Primary

  extending at least partially through the bodies · CPC title

• H10H20/84 Primary

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/83

  Electrodes · CPC title