Wrapped source/drain contacts with enhanced area

Patent metadata

Field	Value
Publication number	US-10084094-B1
Application number	US-201715462420-A
Country	US
Kind code	B1
Filing date	Mar 17, 2017
Priority date	Mar 17, 2017
Publication date	Sep 25, 2018
Grant date	Sep 25, 2018

Abstract

Semiconductor device and methods of forming the same include forming a first dielectric layer over a semiconductor fin. A second dielectric layer is formed around the first dielectric layer. The semiconductor fin is recessed below a height of the first and second dielectric layers. Source and drain extensions are grown from the recessed semiconductor fin. The first dielectric layer is recessed to expose an underside of and sidewalls of the source/drain extensions. Conductive contacts are formed around exposed portions of the source/drain extensions.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a plurality of semiconductor fins;
fin extension formed on respective source and drain regions of the plurality of semiconductor fins that extend vertically and laterally beyond boundaries of the plurality of semiconductor fins;
a first dielectric layer formed on sidewalls of the plurality of semiconductor fins and between the plurality of semiconductor fins, leaving at least a portion of sidewalls and an underside of the fin extension uncovered;
conductive contacts formed in contact with a top surface, the underside, and sidewalls of the respective fin extensions; and
a conductive liner directly between the fin extensions and the conductive contacts that covers a top surface of the first dielectric layer between the plurality of semiconductor fins.

2. The semiconductor device of claim 1 , wherein the first dielectric layer rises to a height above top surfaces of the plurality of semiconductor fins.

3. The semiconductor device of claim 1 , wherein the fin extensions of each semiconductor fin do not contact one another.

4. The semiconductor device of claim 1 , further comprising a second dielectric layer that bounds sidewalls of the conductive contacts.

5. The semiconductor device of claim 4 , wherein the first dielectric layer is formed from silicon nitride and wherein the second dielectric layer is formed from silicon dioxide.

Assignees

• IBM

Inventors

• Cheng Kangguo
• Liu Zuoguang
• Wu Heng
• Xu Peng

Classifications

• H10P50/693

  characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title