Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor
US-9478438-B2 · Oct 25, 2016 · US
US10081867B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10081867-B2 |
| Application number | US-201414484691-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 12, 2014 |
| Priority date | Dec 17, 2009 |
| Publication date | Sep 25, 2018 |
| Grant date | Sep 25, 2018 |
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A linear evaporation source and a deposition apparatus having the same are disclosed. In one embodiment, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate the crucible, the nozzle section, and the heater.
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What is claimed is: 1. A linear evaporation source comprising: a crucible having a length and a width, the crucible comprising an internal space between at least two length sides, being open on one side thereof, and configured to store a deposition material; a plurality of partitions dividing the internal space of the crucible, wherein each of the partitions extends between the two length sides and has at least one opening substantially centered between the two length sides in a lower portion thereof; a nozzle section located on the open side of the crucible and comprising a plurality of nozzles; a heater configured to heat the crucible; and a housing configured to accommodate the crucible, the nozzle section, and the heater, wherein each of the partitions includes a bottom facing the nozzle section, and the opening includes a slit formed in a direction extending from the lower portion of each partition to the nozzle section such that the slit is not directly connected to the bottom of the partition, and wherein a stepped recess is formed in an upper portion of each of the partitions and the opening is extended to the stepped recess. 2. The linear evaporation source according to claim 1 , wherein the partitions are integrally formed with the crucible. 3. The linear evaporation source according to claim 1 , wherein the heater is located on sides of the crucible when the crucible has the open upper side. 4. The linear evaporation source according to claim 1 , wherein the deposition material includes an organic material. 5. The linear evaporation source according to claim 1 , wherein each of the nozzles is located corresponding to each internal space. 6. The evaporation source according to claim 1 , wherein the partitions are configured to communicate the deposition material with each other via the opening until each of the partitions includes substantially the same amount of deposition material. 7. The evaporation source according to claim 1 , wherein the openings of the partitions are substantially aligned with each other and have substantially the same size. 8. A linear evaporation source comprising: a crucible having a length and a width, the crucible comprising an internal space between at least two length sides, being open on one side thereof, and configured to store a deposition material; a plurality of partitions dividing the internal space of the crucible, wherein each of the partitions extends between the two length sides and has at least one opening substantially centered between the two length sides in a lower portion thereof; a nozzle section located on the open side of the crucible and comprising a plurality of nozzles; a heater configured to heat the crucible; a housing configured to accommodate the crucible, the nozzle section, and the heater; and a stepped recess is formed in an upper portion of each of the partitions, wherein the stepped recess is formed substantially directly above and is directly connected to the opening, and wherein the openings of the partitions are substantially aligned with each other and have substantially the same size. 9. The linear evaporation source according to claim 8 , wherein the partitions are integrally formed with the crucible. 10. The linear evaporation source according to claim 8 , wherein each of the nozzles is located corresponding to each internal space. 11. The evaporation source according to claim 8 , wherein the partitions are configured to communicate the deposition material with each other via the opening until each of the partitions includes substantially the same amount of deposition material. 12. A deposition apparatus comprising: a process chamber; an evaporation source located inside the process chamber and configured to contain and spray a deposition material onto a substrate; and a substrate holder located inside the process chamber and configured to hold the substrate, wherein the substrate holder is spaced apart from the evaporation source, wherein the evaporation source includes i) a crucible having a length and a width, the crucible comprising an internal space between at least two length sides and being open on one side thereof, ii) a plurality of partitions dividing the internal space of the crucible, each extending between the two length side and having at least one opening substantially centered between the two length sides in a lower portion thereof, iii) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, iv) a heater configured to heat the crucible, and v) a housing configured to accommodate the crucible, the nozzle section, and the heater, wherein a stepped recess is formed in an upper portion of each of the partitions, and wherein the stepped recess is directly connected to the opening. 13. The deposition apparatus according to claim 12 , wherein the partitions are integrally formed with the crucible. 14. The deposition apparatus according to claim 12 , wherein the housing includes a bottom facing the nozzle section and wherein the opening includes a slit formed in a direction extending from the bottom of the housing to the nozzle section. 15. The deposition apparatus according to claim 12 , wherein when the evaporation source is located at a lower portion of the process chamber, wherein the crucible of the evaporation source has an open upper side, and wherein the heater is located on sides of the crucible. 16. The deposition apparatus according to claim 12 , further comprising a transfer unit configured to move the evaporation source in a direction substantially perpendicular to a direction where the crucible is open. 17. The deposition apparatus according to claim 12 , further comprising a clamping member configured to clamp the substrate placed on the substrate holder.
by evaporation without using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title
Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title
by resistance or inductive heating of the source · CPC title
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