Method for fabricating semiconductor structure, and solid precursor delivery system

Patent metadata

Field	Value
Publication number	US-9343315-B2
Application number	US-201314092362-A
Country	US
Kind code	B2
Filing date	Nov 27, 2013
Priority date	Nov 27, 2013
Publication date	May 17, 2016
Grant date	May 17, 2016

Abstract

A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor.

First claim

What is claimed is:

1. A method for fabricating a semiconductor structure, comprising:
providing a solid precursor having a first average particle size;
solving the solid precursor in an organic solvent into an intermediate;
recrystallizing the intermediate to form solid granules, wherein the solid granules have a second average particle size larger than the first average particle size;
vaporizing the solid granules to form a film-forming gas; and
depositing the film-forming gas on a substrate to form a resistance film.

2. The method of claim 1 , wherein fabricating the semiconductor structure is performed by atomic layer deposition.

3. The method of claim 1 , wherein the first average particle size is in the range of 300 μm to 500 μm.

4. The method of claim 1 , wherein recrystallizing the intermediate is performed at a temperature in the range of −30° C. to 10° C.

5. The method of claim 1 , wherein the second average particle size is in the range of 1 mm to 10 mm.

6. The method of claim 1 , wherein depositing the film-forming gas is depositing on a semiconductor wafer.

7. The method of claim 6 , wherein depositing the film-forming gas is depositing on a metal gate.

8. A method for modifying a resistance film source in a semiconductor fabrication, comprising:
solving a solid precursor in an organic solvent into an intermediate;
recrystallizing the intermediate to form solid granules;
transporting the solid granules to a collecting room;
vaporizing the solid granules to form a film-forming gas; and
delivering the film-forming gas to a deposition chamber by a carrier gas.

9. The method of claim 8 , wherein the semiconductor fabrication is an atomic layer deposition process.

10. The method of claim 9 , wherein the atomic layer deposition process is applied in high-k metal gate technology.

11. The method of claim 8 , wherein recrystallizing the intermediate is performed at a temperature in the range of −30° C. to 10° C.

12. The method of claim 8 , wherein delivering the film-forming gas is performed by an inert gas.

13. The method of claim 12 , wherein delivering the film-forming gas is performed by argon.

14. The method of claim 1 , wherein the solid precursor is Pentakis-dimethylamino tantalum (PDMAT), tantalum chloride (TaCl 5 ), tantalum fluoride (TaF 5 ), hafnium chloride (HfCl 4 ), niobium fluoride (NbF 5 ), or molybdenum fluoride (MoF 5 ).

15. The method of claim 1 , wherein the organic solvent is pentane, hexane, cyclopentane, or cyclohexane.

16. The method of claim 1 , wherein the solid granules have a purity of greater than 99.999%.

17. The method of claim 8 , wherein the solid precursor is Pentakis-dimethylamino tantalum (PDMAT), tantalum chloride (TaCl 5 ), tantalum fluoride (TaF 5 ), hafnium chloride (HfCl 4 ), niobium fluoride (NbF 5 ), or molybdenum fluoride (MoF 5 ).

18. The method of claim 8 , wherein the organic solvent is pentane, hexane, cyclopentane, or cyclohexane.

19. The method of claim 8 , wherein vaporizing the solid granules is performed by heating the collecting room to a temperature above the melting point of the solid granules.

20. The method of claim 8 , wherein the solid precursor has a first average particle size, and the solid granules have a second average particle size larger than the first average particle size.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Cheng Chung-Liang
• Tseng Chien-Hao
• Chen Yen-Yu
• Wu Ching-Chia
• Lee Chang-Sheng
• Zhang Wei

Classifications

• H10D64/01336

  on single crystalline silicon, e.g. chemical oxidation using a liquid · CPC title

• H10D64/01332

  Making the insulator · CPC title

• H10D64/0134

  with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title