Combined method for producing solids, involving laser treatment and temperature-induced stresses to generate three-dimensional solids

Patent metadata

Field	Value
Publication number	US-10079171-B2
Application number	US-201415309224-A
Country	US
Kind code	B2
Filing date	Oct 8, 2014
Priority date	Apr 30, 2014
Publication date	Sep 18, 2018
Grant date	Sep 18, 2018

Abstract

The present invention relates to a method for the production of at least one three-dimensional layer of solid material, in particular for usage as wafer, and/or at least one tree-dimensional solid body. The inventive method preferably comprises the following steps:
providing a work piece for removing of layers of solid material and/or the solid bodies, wherein the work piece comprises at least one exposed surface, generating defects inside the work piece, wherein the defects define at least one crack directing layer, wherein the crack directing layer describes at least one three-dimensional contour; attaching or generating a receiving layer at the exposed surface of work piece by forming a composite structure, thermal treating of the receiving layer for generating stresses inside the work piece, wherein the stresses are causing a crack propagation inside the work piece, wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer.

First claim

The invention claimed is:

1. A method for the production of at least one three-dimensional layer of solid material for usage as wafer and/or at least one three-dimensional solid body, the method comprising:
providing a work piece for removing of layers of solid material and/or the solid body, wherein the work piece includes a first level surface portion and a second level surface portion, wherein the first level surface portion aligns substantially or exactly parallel to the second level surface portion;
wherein the work piece includes at least one exposed surface formed by the second level surface portion;
generating defects inside the work piece with laser beams of a laser, wherein the laser beams penetrate into the solid body through the second level surface portion;
wherein the defects define at least one crack directing layer;
wherein the crack directing layer describes at least one three-dimensional contour;
attaching or generating a receiving layer at the exposed surface of the work piece by forming a composite structure;
thermal treating of the receiving layer to generate stresses inside the work piece, wherein the stresses cause a crack propagation inside the work piece;
wherein a layer of solid material or a three-dimensional solid body is separated along the crack directing layer due to the crack propagation, wherein a surface of the layer of solid material or a surface of the solid body corresponds to the three-dimensional contour of the crack directing layer; and
wherein a shape of the crack directing layer has at least sectionally a contour of a pre-defined three-dimensional object, wherein the contour represents a mathematically definable form body.

2. The method of claim 1 wherein the mathematically definable form body is a lens or a parallelepiped.

3. The method of claim 1 wherein a defect generation apparatus is used for the generation of the defects.

4. The method of claim 3 wherein the defect generation apparatus is a ion gun or a laser.

5. The method of claim 1 further comprising attaching or generating of the receiving layer at the exposed surface of the work piece before the generation of the defects, wherein the receiving layer includes at least one locally varying property, wherein the laser beams are biased from the receiving layer in such a manner that the defects are generated in dependency of the at least one locally varying property.

6. The method of claim 5 wherein the thickness of the receiving layer is the locally varying property.

7. A wafer or uneven solid body produced by the method of claim 1 .

Assignees

• Siltectra Gmbh
• Siltectra Gmbh

Inventors

• Richter Jan

Classifications

• H10P90/1916

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/00

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title