Method for manufacturing a defect-controlled low-oxygen concentration silicon single crystal wafer

Patent metadata

Field	Value
Publication number	US-9650725-B2
Application number	US-201314379522-A
Country	US
Kind code	B2
Filing date	Feb 15, 2013
Priority date	Mar 16, 2012
Publication date	May 16, 2017
Grant date	May 16, 2017

Abstract

The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10 17 atoms/cm 3 (ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot. As a result, there is provided the method that enables manufacturing a low-oxygen concentration silicon single crystal wafer that can be preferably used for a power device with good productivity at a low cost.

First claim

The invention claimed is:

1. A method for manufacturing a silicon single crystal wafer, comprising: growing a silicon single crystal ingot with the use of a CZ single crystal manufacturing apparatus; and slicing out a silicon single crystal wafer from the grown silicon single crystal ingot,
wherein, under a growth condition that V/G≧1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×10 17 atoms/cm 3 (ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot,
wherein, before growing the silicon single crystal ingot, a silicon single crystal ingot having oxygen concentration of 7×10 17 atoms/cm 3 (ASTM'79) or less was grown while changing the growth rate, V/G at a maximum growth rate in the extent that FPDs of the grown silicon single crystal ingot are not detected is obtained, each defect size that is not detected as the FPD in the silicon single crystal ingot grown under a condition of the obtained V/G is acquired based on point defect simulation, and the silicon single crystal ingot from which the silicon single crystal wafer is sliced out is grown under a condition such that a defect size becomes smaller than the previously obtained defect size that is not detected as FPD.

2. The method for manufacturing a silicon single crystal wafer according to claim 1 ,
wherein, at the time of growing the silicon single crystal ingot, nitrogen is doped to grow the silicon single crystal ingot having nitrogen concentration of 1×10 13 to 1×10 16 (/cm 3 ).

3. The method for manufacturing a silicon single crystal wafer according to claim 1 ,
wherein the silicon single crystal ingot is grown with the use of the CZ single crystal manufacturing apparatus comprising: a main chamber in which a crucible containing a raw material melt is arranged; a pulling chamber that is connected to an upper portion of the main chamber and accommodates the grown silicon single crystal ingot; a cooling cylinder that is extended from a ceiling portion of the main chamber toward a liquid level of the raw material melt contained in the crucible and surrounds the silicon single crystal ingot that is being grown; and a cooling auxiliary cylinder disposed on the inner side of the cooling cylinder.

4. The method for manufacturing a silicon single crystal wafer according to claim 2 ,
wherein the silicon single crystal ingot is grown with the use of the CZ single crystal manufacturing apparatus comprising: a main chamber in which a crucible containing a raw material melt is arranged; a pulling chamber that is connected to an upper portion of the main chamber and accommodates the grown silicon single crystal ingot; a cooling cylinder that is extended from a ceiling portion of the main chamber toward a liquid level of the raw material melt contained in the crucible and surrounds the silicon single crystal ingot that is being grown; and a cooling auxiliary cylinder disposed on the inner side of the cooling cylinder.

5. The method for manufacturing a silicon single crystal wafer according to claim 3 ,
wherein the CZ single crystal manufacturing apparatus in which a lower end of the cooling auxiliary cylinder is extended to a level of a lower end of the cooling cylinder or to a level below the lower end of the cooling cylinder but does not reach the liquid level of the raw material melt is used.

6. The method for manufacturing a silicon single crystal wafer according to claim 4 ,
wherein the CZ single crystal manufacturing apparatus in which a lower end of the cooling auxiliary cylinder is extended to a level of a lower end of the cooling cylinder or to a level below the lower end of the cooling cylinder but does not reach the liquid level of the raw material melt is used.

7. The method for manufacturing a silicon single crystal wafer according to claim 3 ,
wherein the CZ single crystal manufacturing apparatus in which a slit that is continuous in an axial direction is formed in the cooling auxiliary cylinder is used.

8. The method for manufacturing a silicon single crystal wafer according to claim 4 ,
wherein the CZ single crystal manufacturing apparatus in which a slit that is continuous in an axial direction is formed in the cooling auxiliary cylinder is used.

9. The method for manufacturing a silicon single crystal wafer according to claim 5 ,
wherein the CZ single crystal manufacturing apparatus in which a slit that is continuous in an axial direction is formed in the cooling auxiliary cylinder is used.

10. The method for manufacturing a silicon single crystal wafer according to claim 3 ,
wherein the CZ single crystal manufacturing apparatus in which a material of the cooling cylinder is any one of iron, chrome, nickel, copper, titanium, molybdenum, tungsten, and an alloy containing any one of these materials or made by coating a metal with any one of titanium, molybdenum, tungsten, and a platinum group metal is used.

11. The method for manufacturing a silicon single crystal wafer according to claim 3 ,
wherein the CZ single crystal manufacturing apparatus in which a material of the cooling auxiliary cylinder is any one of a graphite material, a carbon composite, stainless, molybdenum, and tungsten is used.

Assignees

• Shinetsu Handotai Kk

Inventors

• Hoshi Ryoji
• Kamada Hiroyuki
• Sugawara Kosei

Classifications

• C30B15/203 Primary

  the relationship of pull rate (v) to axial thermal gradient (G) · CPC title

• C30B29/06

  Silicon · CPC title