Multiband double junction photodiode and related manufacturing process

Patent metadata

Field	Value
Publication number	US-10062798-B2
Application number	US-201715479034-A
Country	US
Kind code	B2
Filing date	Apr 4, 2017
Priority date	Mar 6, 2015
Publication date	Aug 28, 2018
Grant date	Aug 28, 2018

Abstract

A photodiode structure is based on the use of a double junction sensitive to different wavelength bands based on a magnitude of a reverse bias applied to the photodiode. The monolithic integration of a sensor with double functionality in a single chip allows realization of a low cost ultra-compact sensing element in a single packaging useful in many applications which require simultaneous or spatially synchronized detection of optical photons in different spectral regions.

First claim

The invention claimed is:

1. A device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
a collective anode including a first portion on the first semiconductor layer, and a second portion on the second semiconductor layer, the first portion and the second portion being electrically shorted together;
a cathode spaced from the collective anode by the first semiconductor layer;
a first contact, the first portion of the collective anode being spaced from the first semiconductor layer by the first contact; and
a second contact, the second portion of the collective anode being spaced from the first semiconductor layer by the second contact and the second semiconductor layer.

2. The device of claim 1 , further comprising:
a third semiconductor layer having a first side and an opposite second side, the first semiconductor layer being on the first side, the cathode being on the second side.

3. The device of claim 2 wherein the first semiconductor layer has a first concentration of dopant atoms, the second semiconductor layer has a second concentration of dopant atoms less than the first concentration of dopant atoms, and the third semiconductor layer has a third concentration of dopant atoms greater than the first concentration of dopant atoms.

4. The device of claim 2 , further comprising:
a third contact, the third semiconductor layer being spaced from the cathode by the third contact.

5. The device of claim 1 , further comprising:
dielectric material on the first semiconductor layer, the first portion of the collective anode being spaced from the second semiconductor layer by the dielectric material.

6. The device of claim 1 wherein the first contact is annular and surrounds the second contact.

7. The device of claim 1 wherein the second portion of the collective anode includes an aperture that exposes the second contact.

8. The device of claim 1 , further comprising:
a third semiconductor layer on the first semiconductor layer, the second semiconductor layer being spaced from the first semiconductor layer by the third semiconductor layer.

9. The device of claim 1 , further comprising:
an oxide layer on the first semiconductor layer; and
a dielectric layer on the oxide layer, the second semiconductor layer being spaced from the first semiconductor layer by the oxide layer and the dielectric layer.

10. A method, comprising:
forming a first layer semiconductor layer on a second semiconductor layer;
forming a collective anode, the collective anode including a first portion on the second semiconductor layer, and a second portion on the first semiconductor layer, the first portion and the second portion being electrically shorted together;
forming a cathode, the cathode being spaced from the collective anode by the second semiconductor layer;
forming a first contact, the first portion of the collective anode being spaced from the second semiconductor layer by the first contact; and
forming a second contact, the second portion of the collective anode being spaced from the second semiconductor layer by the second contact and the first semiconductor layer.

11. The method of claim 10 , further comprising:
forming the second semiconductor layer on a first side of a third semiconductor layer;
forming the cathode on a second side, opposite to the first side, of the third semiconductor layer.

12. The method of claim 10 , further comprising:
doping the first semiconductor layer to have a first concentration of dopant atoms; and
doping the second semiconductor layer to have a second concentration of dopant atoms that is less than the first concentration of dopant atoms.

13. The method of claim 10 , further comprising:
forming an opening in the second portion of the collective anode that exposes the second contact.

14. A device, comprising:
a first semiconductor layer, the first semiconductor layer having a first concentration of dopant atoms;
a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a second concentration of dopant atoms that is less than the first concentration of dopant atoms;
a first electrode including a first portion on the first semiconductor layer, and a second portion on the second semiconductor layer;
a second electrode spaced from the first electrode by the first semiconductor layer;
a first contact, the first portion of the first electrode being spaced from the first semiconductor layer by the first contact; and
a second contact, the second portion of the first electrode being spaced from the first semiconductor layer by the second contact and the second semiconductor layer.

15. The device of claim 14 , further comprising:
a third semiconductor layer having a first side and an opposite second side, the first semiconductor layer being on the first side, the second electrode being on the second side, the third semiconductor layer having a third concentration of dopant atoms that is greater than the first concentration of dopant atoms.

16. The device of claim 14 , further comprising:
dielectric material on the first semiconductor layer, the first portion of the first electrode being spaced from the second semiconductor layer by the dielectric material.

17. The device of claim 14 wherein the first electrode includes an aperture.

18. A device, comprising:
a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
a first electrode including a first portion on the first semiconductor layer, and a second portion on the second semiconductor layer;
a second electrode spaced from the first electrode by the first semiconductor layer;
a first contact, the first portion of the first electrode being spaced from the first semiconductor layer by the first contact; and
a second contact, the second portion of the first electrode being spaced from the first semiconductor layer by the second contact and the second semiconductor layer, the first contact being annular, the first contact surrounding the second contact.

19. The device of claim 18 wherein the first portion is annular and surrounds the second portion.

20. The device of claim 18 wherein the first semiconductor layer has a first concentration of dopant atoms, and the second semiconductor layer has a second concentration of dopant atoms less than the first concentration of dopant atoms.

Assignees

• St Microelectronics Srl

Inventors

• Mazzillo Massimo Cataldo
• SCIUTO Antonella
• Sutera Dario

Classifications

• H01L31/022416

  Electricity · mapped topic

• H01L31/1013 Primary

  Electricity · mapped topic

• H01L31/11

  Electricity · mapped topic

• H01L31/108

  Electricity · mapped topic

• H01L31/1812

  Electricity · mapped topic