Dual-band infrared detector and method of detecting multiple bands of infrared radiation

Patent metadata

Field	Value
Publication number	US-9755091-B2
Application number	US-201514679718-A
Country	US
Kind code	B2
Filing date	Apr 6, 2015
Priority date	Apr 6, 2015
Publication date	Sep 5, 2017
Grant date	Sep 5, 2017

Abstract

A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band, a plurality of barrier layers coupled to the first absorption layer, and a second absorption layer coupled to the plurality of barrier layers opposite the first absorption layer. The second absorption layer is sensitive to radiation in only a medium wavelength infrared spectral band, and the first and second absorption layers are formed from materials having a lattice parameter mismatch less than a predetermined threshold.

First claim

What is claimed is:

1. A dual-band infrared detector comprising:
a first absorption layer sensitive to radiation in only a short wavelength infrared spectral band;
a plurality of barrier layers coupled to said first absorption layer; and
a second absorption layer coupled to said plurality of barrier layers opposite said first absorption layer, said second absorption layer sensitive to radiation in only a medium wavelength infrared spectral band, wherein said first and second absorption layers are formed from materials having a lattice parameter mismatch less than a predetermined threshold, and wherein said plurality of barrier layers comprises:
a first group of barrier layers coupled directly against said first absorption layer, each of said first group of barrier layers comprising a first barrier material having a wide bandgap relative to a bandgap of said first absorption layer; and
a second group of barrier layers coupled directly against said second absorption layer, each of said second group of barrier layers comprising a second barrier material different from said first barrier material, wherein said second group of barrier layers is coupled directly against said first group of barrier layers.

2. The dual-band infrared detector in accordance with claim 1 , wherein said first and second absorption layers are formed from materials having a lattice parameter mismatch of less than 0.8 percent.

3. The dual-band infrared detector in accordance with claim 1 , wherein said first absorption layer is sensitive to wavelengths of up to 2.5 micrometers.

4. The dual-band infrared detector in accordance with claim 1 , wherein said second absorption layer is sensitive to wavelengths throughout a range between 2.5 micrometers and 5 micrometers.

5. The dual-band infrared detector in accordance with claim 1 , wherein said first absorption layer is formed from a superlattice structure comprising at least one layer of a first semiconductor material and at least one layer of a second semiconductor material.

6. The dual-band infrared detector in accordance with claim 5 , wherein said first semiconductor material comprises Indium and Arsenic, and wherein said second semiconductor material comprises Aluminum and Antimony.

7. The dual-band infrared detector in accordance with claim 1 , wherein said second absorption layer comprises Indium, Arsenic, and Antimony.

8. The dual-band infrared detector in accordance with claim 1 , wherein said second barrier material comprises AlGaSb and said first barrier material comprises AlAsSb.

9. The dual-band infrared detector in accordance with claim 1 further comprising:
a first p-n junction comprising said first absorption layer and at least said first group of barrier layers; and
a second p-n junction comprising said second absorption layer and at least said second group of barrier layers.

10. The dual-band infrared detector in accordance with claim 1 further comprising:
at least one buffer layer coupled to said first absorption layer; and
a substrate coupled to said at least one buffer layer.

11. An imaging system comprising:
a readout integrated circuit; and
a dual-band infrared detector electrically coupled to said readout integrated circuit, wherein said dual-band infrared detector comprises:
a first absorption layer, said first absorption layer sensitive to radiation in only a short wavelength infrared spectral band;
a plurality of barrier layers coupled to said first absorption layer; and
a second absorption layer coupled to said plurality of barrier layers opposite said first absorption layer, said second absorption layer sensitive to radiation in only a medium wavelength infrared spectral band, wherein said first and second absorption layers are formed from materials having a lattice parameter mismatch of less than a predetermined threshold,
wherein said readout integrated circuit is configured to selectively apply a bias voltage to said dual-band infrared detector, and wherein said plurality of barrier layers comprises:
a first group of barrier layers coupled directly against said first absorption layer, each of said first group of barrier layers comprising a first barrier material having a wide bandgap relative to a bandgap of said first absorption layer; and
a second group of barrier layers coupled directly against said second absorption layer, each of said second group of barrier layers comprising a second barrier material different from said first barrier material, wherein said second group of barrier layers is coupled directly against said first group of barrier layers.

12. The dual-band infrared detector in accordance with claim 11 , wherein said first absorption layer is sensitive to wavelengths of up to 2.5 micrometers.

13. The dual-band infrared detector in accordance with claim 11 , wherein said second absorption layer is sensitive to wavelengths throughout a range between 2.5 micrometers and 5 micrometers.

14. The dual-band infrared detector in accordance with claim 11 , wherein said first absorption layer is formed from a superlattice structure comprising at least one layer of a first semiconductor material and at least one layer of a second semiconductor material.

15. The dual-band infrared detector in accordance with claim 14 , wherein said first semiconductor material comprises Indium and Arsenic, and wherein said second semiconductor material comprises Aluminum and Antimony.

16. The dual-band infrared detector in accordance with claim 11 , wherein said second absorption layer comprises Indium, Arsenic, and Antimony.

17. A method of detecting multiple bands of infrared radiation, said method comprising:
selectively applying bias voltages to a dual-band infrared detector including a first absorption layer and a second absorption layer, wherein the first absorption layer formed from an InAs/AlSb superlattice structure is sensitive to radiation in only a short wavelength infrared spectral band, and the second absorption layer formed from an InAsSb alloy material is sensitive to radiation in only a medium wavelength infrared spectral band, wherein the dual band infrared detector further includes:
a first group of barrier layers each formed from a first barrier material, the first group of barrier layers coupled directly against the first absorption layer, and
a second group of barrier layers each formed from a second barrier material, the second group of barrier layers coupled directly against the second absorption layer, the first barrier material having a wide bandgap relative to a bandgap of the first absorption layer, the second barrier material different from the first barrier material, wherein the second group of barrier layers is coupled directly against the first group of barrier layers;

receiving a first electrical signal from the dual-band infrared detector when a bias voltage having a first polarity is applied thereto, the first electrical signal corresponding to detection of radiation in the short wavelength infrared spectral band; and
receiving a second electrical signal from the dual-band infrared detector when a bias voltage having a opposite second polarity is applied thereto, the second electrical signal corresponding to detection of radiation in the medium wavelength infrared spectral band.

18. The method in accordance with claim 17 , wherein selectively applying bias voltages comprises applying the bias voltages to the dual-band infrared detector sequentially.

19. The method in accordance with claim 17 further comprising selectively applying the bias volt

Assignees

• Boeing Co

Inventors

• Delaunay Pierre-Yves

Classifications

• H01L31/035236

  Electricity · mapped topic

• H01L31/03046

  Electricity · mapped topic

• H01L31/1013

  Electricity · mapped topic

• H01L31/0304 Primary

  Electricity · mapped topic

• H10F77/1248

  having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP · CPC title