Semiconductor device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10032918-B2
Application number	US-201715488626-A
Country	US
Kind code	B2
Filing date	Apr 17, 2017
Priority date	Apr 22, 2016
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first barrier insulating film;
a first gate electrode over the first barrier insulating film;
a first gate insulating film over the first gate electrode;
an oxide semiconductor film over the first gate insulating film;
a source electrode and a drain electrode that are apart from each other over the oxide semiconductor film;
a second gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode;
a second gate electrode which is over the second gate insulating film and at least part of which overlaps with a region between the source electrode and the drain electrode;
a second barrier insulating film that covers the oxide semiconductor film, the source electrode, the drain electrode, the second gate electrode, and the second gate insulating film, and is in contact with side surfaces of the oxide semiconductor film, the source electrode, and the drain electrode and a top surface of the first gate insulating film; and
a third barrier insulating film over the second barrier insulating film,
wherein the first barrier insulating film, the second barrier insulating film, and the third barrier insulating film are less likely to transmit hydrogen, water, and oxygen than the first gate insulating film and the second gate insulating film,
wherein the third barrier insulating film has a smaller thickness than the second barrier insulating film,
wherein the source electrode comprises a first conductive layer in contact with the oxide semiconductor film and a second conductive layer over the first conductive layer,
wherein the drain electrode comprises a third conductive layer in contact with the oxide semiconductor film and a fourth conductive layer over the third conductive layer,
wherein each of the first conductive layer and the third conductive layer comprise a conductive oxide film, and
wherein the conductive oxide film has a larger number of oxygen vacancies than the oxide semiconductor film.

2. The semiconductor device according to claim 1 , further comprising:
a first insulator in contact with a top surface of the second conductive layer; and
a second insulator in contact with a top surface of the fourth conductive layer,
wherein the first insulator and the second insulator are less likely to transmit oxygen than the first gate insulating film and the second gate insulating film.

3. The semiconductor device according to claim 1 , wherein the conductive oxide film comprises indium.

4. The semiconductor device according to claim 1 , wherein each of the first barrier insulating film, the second barrier insulating film, and the third barrier insulating film comprises oxygen and aluminum.

5. A semiconductor device comprising:
a first insulator;
a second insulator over the first insulator;
a first conductor over the second insulator;
a third insulator over the first conductor;
a first oxide over the third insulator;
a second oxide over the first oxide;
a first conductive oxide and a second conductive oxide that are apart from each other over the second oxide;
a second conductor over the first conductive oxide;
a third conductor over the second conductive oxide;
a third oxide that is over the second oxide, the first conductive oxide, the second conductive oxide, the second conductor, and the third conductor and is in contact with a top surface and a side surface of the second oxide, a side surface of the first oxide, and a top surface of the third insulator;
a fourth insulator over the third oxide;
a fourth conductor positioned over the fourth insulator so that at least part of the fourth conductor overlaps with a region between the second conductor and the third conductor;
a fifth insulator provided in contact with a side surface of the first conductive oxide, a side surface of the second conductive oxide, the side surface of the second oxide, and the top surface of the third insulator so as to cover the first oxide, the second oxide, the third oxide, the first conductive oxide, the second conductive oxide, the second conductor, the third conductor, the fourth conductor, and the fourth insulator; and
a sixth insulator over the fifth insulator,
wherein the first, second, fifth, and sixth insulators are less likely to transmit hydrogen, water, and oxygen than the third and fourth insulators,
wherein the first insulator has a smaller thickness than the second insulator, and the sixth insulator has a smaller thickness than the fifth insulator, and
wherein the first conductive oxide and the second conductive oxide each have a larger number of oxygen vacancies than the second oxide.

6. The semiconductor device according to claim 5 , further comprising:
a seventh insulator in contact with a top surface of the fourth conductor,
wherein the seventh insulator is less likely to transmit oxygen than the third and fourth insulators.

7. The semiconductor device according to claim 6 , further comprising:
an eighth insulator in contact with a top surface of the second conductor; and
a ninth insulator in contact with a top surface of the third conductor,
wherein the eighth insulator and the ninth insulator are less likely to transmit oxygen than the third insulator and the fourth insulator.

8. The semiconductor device according to claim 7 , wherein the eighth insulator and the ninth insulator each comprise oxygen and aluminum.

9. The semiconductor device according to claim 5 , further comprising:
a tenth insulator over the sixth insulator;
an eleventh insulator over the tenth insulator; and
a twelfth insulator over the eleventh insulator,
wherein the third insulator, the fifth insulator, the sixth insulator, and the tenth insulator have an opening reaching the second insulator and the eleventh insulator is in contact with a top surface of the second insulator through the opening,
wherein the opening is provided so as to surround an external side of the second oxide,
wherein the eleventh insulator and the twelfth insulator are less likely to transmit hydrogen, water, and oxygen than the tenth insulator, and
wherein the twelfth insulator has a smaller thickness than the eleventh insulator.

10. The semiconductor device according to claim 5 , wherein the first conductive oxide and the second conductive oxide each comprise indium.

11. The semiconductor device according to claim 10 , wherein a density of indium comprised in the first conductive oxide and the second conductive oxide is higher than a density of indium comprised in the second oxide.

12. The semiconductor device according to claim 10 , wherein the first conductive oxide and the second conductive oxide each comprise zinc.

13. The semiconductor device according to claim 10 , wherein the first conductive oxide and the second conductive oxide each comprise tin and silicon.

14. The semiconductor device according to claim 5 , wherein the first oxide, the second oxide, and the third oxide comprise In, M that is Al, Ga, Y, or Sn, and Zn.

15. The semiconductor device according to claim 5 , wherein the third insulator and the fourth insulator each comprise oxygen and silicon.

16. The semiconductor device according to claim 5 , wherein the first insulator, the second insulator, the fifth insulator, and the sixth insulator comprise oxygen and aluminum.

17. A semiconductor device comprising:
a first barrier insulating film;
a first gate electrode over the first barrier insulating film;
a first gate insulating film over the first gate electrode;
an oxide semiconductor film over the first ga

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Matsubayashi Daisuke
• Tokumaru Ryo
• Yamane Yasumasa
• Ogino Kiyofumi
• Endo Taichi
• Kimura Hajime

Classifications

• H10D30/6734

  having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs · CPC title

• H01L29/7869

  Electricity · mapped topic

• H01L29/78648

  Electricity · mapped topic

• H01L29/78606 Primary

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic