Etch metric sensitivity for endpoint detection

Patent metadata

Field	Value
Publication number	US-10032681-B2
Application number	US-201615059073-A
Country	US
Kind code	B2
Filing date	Mar 2, 2016
Priority date	Mar 2, 2016
Publication date	Jul 24, 2018
Grant date	Jul 24, 2018

Abstract

Monitoring a geometric parameter value for one or more features produced on a substrate during an etch process may involve: (a) measuring optical signals produced by optical energy interacting with features being etched on the substrate; (b) providing a subset of the measured optical signals, wherein the subset is defined by a range where optical signals were determined to correlate with target geometric parameter values for features; (c) applying the subset of optical signals to a model configured to predict the target geometric parameter values from the measured optical signals; (d) determining, from the model, a current value of the target geometric parameter of the features being etched; (e) comparing the current value of the target geometric parameter of the features being etched to an etch process endpoint value for the target geometric parameter; and (f) repeating (a)-(e) until the comparing in (e) indicates that the current value of the target geometric parameter of the features being etched has reached the endpoint value.

First claim

What is claimed is:

1. A method of generating a computational model that relates measured optical signals produced by optical energy interacting with features etched on a substrate to values of a target geometric parameter of the features etched on the substrate, the method comprising:
determining a range of the measured optical signals for use in the computational model, wherein determining the range comprises:
identifying a first change in the measured optical signals in the range due to a variation in values of a non-target geometric parameter,
identifying a second change in the measured optical signals in the range due to a variation in values of the target geometric parameter, and
determining that the second change is greater than the first change;
providing a training set having members with values of the optical signals in the range, wherein each member of the training set comprises (i) a value of the target geometric parameter of the features etched in the substrate, and (ii) an associated optical signal produced from etched features having the value of the target geometric parameter of the features etched in the substrate; and
producing the computational model from the training set.

2. The method of claim 1 , wherein the members of the training set further comprise values of a non-target geometric parameter of the features etched in the substrate.

3. The method of claim 1 , wherein the members of the training set are obtained experimentally.

4. The method of claim 1 , wherein the members of the training set are generated computationally.

5. The method of claim 4 , wherein the members of the training set are generated from a surface kinetic model and an optical modelling routine.

6. The method of claim 1 , wherein the training set comprises at least about 50 members.

7. The method of claim 1 , wherein producing the computational model from the training set comprises using a neural network or a regression technique.

8. The method of claim 1 , wherein the target geometric parameter of the features etched on the substrate is an etch depth, a pitch, or an etch critical dimension.

9. The method of claim 1 , wherein the measured optical signals comprise reflectance values produced from the features etched on the substrate.

10. The method of claim 1 , wherein the range where the measured optical signals correlate less strongly with a non-target geometric parameter than with the target geometric parameter is a range of wavelengths.

11. The method of claim 1 , wherein determining the range comprises determining variations in the range according to variations in correlation of the measured optical signals with the target geometric parameter for different values of the target geometric parameter.

12. A computational model configured to calculate values of a target geometric parameter for features etched on a substrate from measured optical signals produced by optical energy interacting with the features etched on the substrate, wherein the computational model was generated by the method of claim 1 .

13. A method of determining an etch process endpoint of a target geometric parameter value for one or more features produced on a substrate during an etch process, the method comprising:
(a) directing incident electromagnetic radiation onto the substrate;
(b) measuring optical signals produced by the incident electromagnetic radiation interacting with features being etched on the substrate;
(c) providing a subset of the measured optical signals, wherein the subset is defined by a range where optical signals were determined to correlate with values of a target geometric parameter for the features;
(d) applying the subset of optical signals to a model configured to predict the target geometric parameter values from the measured optical signals, wherein the model was generated by determining the range where optical signals were determined to correlate with target geometric parameter values for features;
(e) determining, from the model, a current value of the target geometric parameter of the features being etched;
(f) comparing the current value of the target geometric parameter of the features being etched to an etch process endpoint value for the target geometric parameter; and
(g) repeating (b)-(f) until the comparing in (f) in indicates that the current value of the target geometric parameter of the features being etched has reached the etch process endpoint value.

14. The method of claim 13 , wherein the target geometric parameter of the features being etched is an etch depth, a pitch, or an etch critical dimension.

15. The method of claim 13 , further comprising terminating the etch process when the comparing in (e) indicates that the current value of the target geometric parameter of the features being etched has reached the etch process endpoint value.

16. The method of claim 13 , wherein measuring optical signals produced in (a) comprises measuring reflectance produced from the features being etched on the substrate.

17. The method of claim 13 , wherein the range defining the subset of measured optical signals in (b) is a range of wavelengths where the optical signals were determined, using a regression technique, to correlate with the target geometric parameter value for the features.

18. The method of claim 13 , wherein the range defining the subset of measured optical signals in (b) varies between two repetitions of (a)-(e).

19. The method of claim 18 , wherein the range defining the subset of measured optical signals in (b) was determined to vary according to variations in correlation of the optical signals with the target geometric parameter for different values of the target geometric parameter.

20. The method of claim 13 , wherein the range defining the subset of measured optical signals in (b) is a range where the optical signals were determined to correlate less strongly with a non-target geometric parameter than the target geometric parameter.

21. A system for etching one or more features on a substrate during an etch process, the system comprising:
an etching apparatus for etching semiconductor substrates; and
a controller for controlling the operation of the etching apparatus, the controller comprising non-transitory memory storing executable instructions for:
(a) directing incident electromagnetic radiation to the substrate;
(b) measuring optical signals produced by optical energy interacting with features being etched on the substrate;
(c) providing a subset of the measured optical signals, wherein the subset is defined by a range where optical signals were determined to correlate with values of a target geometric parameter for the features;
(d) applying the subset of optical signals to a model configured to predict the target geometric parameter values from the measured optical signals, wherein the model was generated by determining the range where optical signals were determined to correlate with target geometric parameter values for features;
(e) determining, from the model, a current value of the target geometric parameter of the features being etched;
(f) comparing the current value of the target geometric parameter of the features being etched to an etch process endpoint value for the target geometric parameter; and
(g) repeating (b)-(f) until the comparing in (f) indicates that the current value of the target geometric parameter of the features being etched has reached the etch process endpoint value.

22. The system of claim 21 , wherein

Assignees

• Lam Res Corp

Inventors

• Bailey Iii Andrew D
• Tetiker Mehmet Derya
• Mills Duncan W

Classifications

• H10P74/238 Primary

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G06F30/20

  Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title