Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization

Patent metadata

Field	Value
Publication number	US-9792393-B2
Application number	US-201615018708-A
Country	US
Kind code	B2
Filing date	Feb 8, 2016
Priority date	Feb 8, 2016
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, the methods may include modifying one or more values of B so as to reduce a metric indicative of the differences between computed reflectance spectra generated from the model and corresponding experimental reflectance spectra with respect to one or more sets of values of A. In some embodiments, calculating the metric may include an operation of projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the subspace. Also disclosed are etch systems implementing such optimized computer models.

First claim

The invention claimed is:

1. A method of generating a lithography mask by optimizing a computer model which relates an etch profile of a feature on a semiconductor substrate to a set of independent input parameters, via the use of a plurality of model parameters, the method comprising:
(a) identifying a set of values for a selected set of the model parameters to be optimized;
(b) identifying multiple sets of values for a selected set of independent input parameters to optimize over;
(c) for each set of values specified in (b), receiving an experimental reflectance spectra generated from an optical measurement of an experimental etch process performed using the set of values specified in (b);
(d) for each set of values specified in (b), generating a computed reflectance spectra from the model using the set of values specified in (a) and (b);
(e) modifying one or more values specified in (a) for the selected set of model parameters and repeating (d) with the modified set of values so as to reduce a metric indicative of the differences between the experimental reflectance spectra received in (c) and corresponding computed reflectance spectra generated in (d) with respect to one or more sets of values for the selected independent input parameters specified in (b), thereby producing modified values for the selected set of model parameters;

wherein calculating the metric in (e) comprises an operation of:
(1) calculating the differences between the computed and corresponding experimental reflectance spectra and projecting the differences onto a reduced-dimensional subspace; and/or
(2) projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the reduced-dimensional subspace;
(f) using the computer model with the modified values for the selected set of model parameters to design the lithographic mask; and
(g) generating the lithographic mask based on the design generated by the computer model in (f).

2. The method of claim 1 , wherein at least some of the computed reflectance spectra are generated by a process comprising:
(i) generating a computed etch profile represented by a series of etch profile coordinates using the model;
(ii) from the computed etch profile generated in (i), generating a computed reflectance spectrum by simulating the reflection of electromagnetic radiation off of said computed etch profile.

3. The method of claim 1 , wherein:
the experimental reflectance spectra generated in (c) comprise reflectance spectra corresponding to a sequence of etch times representing different durations of etch processes; and
the computed reflectance spectra generated in (d) comprise reflectance spectra computed from the model so as to correspond to the sequence of etch times in (c).

4. The method of claim 3 , wherein the experimental reflectance spectra are generated in (c) from optical measurements taken during ongoing etch processes at the sequence of etch times.

5. The method of claim 4 , wherein consecutive etch times over at least a portion of the sequence of etch times are separated by 0.01-1 second.

6. The method of claim 4 , wherein at least some of the experimental reflectance spectra generated in (c) have been adjusted based on comparisons with optical measurements taken with respect to, and after the conclusion of, substrate etch processes of various durations.

7. The method of claim 6 , wherein the optical measurements corresponding to the concluded etch processes of various duration are taken after the corresponding etched substrates have been removed from the processing chambers in which they were etched.

8. The method of claim 1 , wherein determining the reduced-dimensional subspace in (1) comprises a principle component analysis (PCA) of the differences between experimental and calculated reflectance spectra.

9. The method of claim 1 , wherein determining the reduced-dimensional subspace in (2) comprises a PCA of the experimental reflectance spectra, a PCA of the calculated reflectance spectra, or a PCA of a combination of both experimental and calculated reflectance spectra.

10. The method of claim 1 , wherein the reduced-dimensional subspace corresponds to the selection of particular spectral wavelengths at particular etch times, and the metric is a weighted sum of quantities monotonically related to the magnitude of the differences between corresponding experimental and calculated reflectance spectra as projected onto the reduced-dimensional subspace.

11. The method of claim 10 , wherein the weights used to calculate the weighted sum have equal value, the quantities monotonically related to the differences are the squares of the differences, and the metric is monotonically related to the mean-square difference between corresponding experimental and calculated reflectance spectra as projected onto the reduced-dimensional subspace.

12. The method of claim 10 , wherein some of the weights corresponding to particular wavelengths at particular etch times are larger than some of the weights corresponding to the same wavelengths at other etch times.

13. The method of claim 12 , wherein some of the weights corresponding to particular wavelengths at particular etch times are larger than some of the weights corresponding to other wavelengths at the same etch times.

14. The method of claim 12 , wherein the weights corresponding to particular wavelengths at particular etch times are determined via a process comprising:
a partial least squares (PLS) analysis;
wherein the PLS analysis relates the geometric coordinates of an etch profile of a feature on a semiconductor substrate at the conclusion of an etch process with reflectance values corresponding to particular wavelengths at particular etch times earlier in the etch process.

15. The method of claim 14 , wherein the etch profile and the reflectance values are determined experimentally.

16. The method of claim 14 , wherein the etch profile and reflectance values are determined from a model optimized according to claim 1 .

17. The method of claim 1 , further comprising repeating (e).

18. The method of claim 17 , further comprising further repeating (e) until a substantially local minimum in error with respect to the model parameters selected in (a) is obtained.

19. The method of claim 1 , wherein the computer model calculates local etch rates at a grid of points representing the etch profile of the feature on the semiconductor substrate as a function of time.

20. The method of claim 19 , wherein the model parameters include reaction rate constants, reactant and product sticking coefficients, and reactant and product diffusion constants.

21. The method of claim 1 , wherein the selection in (b) of the multiple sets of values for the set of independent input parameters comprises PCA.

22. The method of claim 21 , wherein the PCA is performed with respect to concatenated vectors of independent input parameters and corresponding measured etch profiles.

23. An optimized computer model which generates a computed etch profile of a feature on a semiconductor substrate from a set of values for a set of independent input parameters, the computer model having been optimized by the method of claim 1 .

24. A method of approximately determining the profile of a feature on a semiconductor substrate after the feature has been etched by an etch process, t

Assignees

• Lam Res Corp

Inventors

• Tetiker Mehmet Derya
• Sriraman Saravanapriyan
• Bailey Iii Andrew D
• Paterson Alex
• Gottscho Richard A

Classifications

• G06F30/367 Primary

  Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods · CPC title

• G03F1/70 Primary

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F7/00

  Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K) · CPC title

• G01B2210/56

  Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

• G03F1/80

  Etching · CPC title