On-product derivation and adjustment of exposure parameters in a directed self-assembly process

Patent metadata

Field	Value
Publication number	US-10025285-B2
Application number	US-201514755758-A
Country	US
Kind code	B2
Filing date	Jun 30, 2015
Priority date	Jun 13, 2013
Publication date	Jul 17, 2018
Grant date	Jul 17, 2018

Abstract

Methods and metrology tool modules embodying the methods are provided. Methods comprise measuring characteristics of intermediate features such as guiding lines in a directed self-assembly (DSA) process, deriving exposure parameters from the measured characteristics; and adjusting production parameters for producing consecutive target features according to the derived exposure parameters. The methods and modules enhance the accuracy of the DSA-produced structures and related measurements.

First claim

What is claimed is:

1. A method comprising:
measuring, with a metrology tool, one or more characteristics of one or more intermediate features formed on a production wafer via at least one of a lithography, etching, or rinsing step in a directed self-assembly process;
deriving, with a processor, one or more exposure parameters from the measured characteristics of the one or more intermediate features; and
providing at least one of one or more correction-of-exposure parameters or one or more adjustment-of-production parameters to a fabrication tool for fabricating one or more additional features according to the one or more exposure parameters.

2. The method of claim 1 , wherein the intermediate features are directed self-assembly guiding lines.

3. The method of claim 1 , wherein the characteristics are geometric characteristics.

4. The method of claim 3 , wherein the geometric characteristics comprise at least one of a critical dimension and a side wall angle.

5. The method of claim 1 , wherein the characteristics are imaging characteristics.

6. The method of claim 5 , wherein the imaging characteristics comprise at least one of contrast differences and pupil image changes.

7. The method of claim 1 , wherein the step of deriving exposure parameters from the measured characteristics of the intermediate features is carried out using principle component analysis.

8. The method of claim 1 , wherein the step of deriving exposure parameters from the measured characteristics of the intermediate features is carried out using geometric measurement signals associated with the measured characteristics of intermediate features.

9. The method of claim 1 , further comprising:
implementing a model of the exposure parameters to carry out at least one of the step of deriving exposure parameters from the measured characteristics of the intermediate features, the step of providing at least one of a correction of exposure parameters, or the step of providing at least one of an adjustment of production parameters for producing consecutive target features according to the exposure parameters.

10. The method of claim 9 , further comprising deriving the model in a training stage.

11. The method of claim 1 , wherein the exposure parameters comprise at least one of lithography parameters and etch parameters.

12. The method of claim 1 , wherein the exposure parameters comprise at least one of a focus and a dose.

13. A system comprising:
a metrology tool configured to measure one or more characteristics of one or more intermediate features formed on a production wafer following at least one of a lithography, etching, or rinsing step on a wafer in a directed self-assembly process; and
a computer configured to execute a computer readable program configured to derive one or more exposure parameters from the measured characteristics of the intermediate features, wherein the computer readable program is maintained in a computer readable storage medium,
the computer further configured to execute the computer readable program configured to provide at least one of one or more correction of exposure parameters or one or more adjustment of production parameters to a fabrication tool for fabricating one or more additional features according to the one or more exposure parameters.

14. The system of claim 13 , wherein the metrology tool is configured to measure characteristics of targets produced via the directed self-assembly process, the intermediate features comprise directed self-assembly guiding lines, and the characteristics are geometric characteristics comprising at least one of a critical dimension, a side wall angle, or imaging characteristics comprising contrast differences.

15. The system of claim 13 , wherein the computer is further configured to:
perform a derivation process using at least one of a principle component analysis or geometric measurement signals associated with the measured characteristics.

16. The system of claim 13 , wherein the computer is further configured to:
derive a model of the exposure parameters during a training stage and carry out at least one of the deriving and the adjusting steps using the model.

Assignees

• Kla Tencor Corp

Inventors

• Volkovich Roie
• Amit Eran
• Amir Nuriel
• Adel Michael E

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G05B2219/33285

  Diagnostic · CPC title

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title