Semiconductor device and electronic device

Patent metadata

Field	Value
Publication number	US-10019025-B2
Application number	US-201615219453-A
Country	US
Kind code	B2
Filing date	Jul 26, 2016
Priority date	Jul 30, 2015
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A semiconductor device or a memory device with low power consumption and a small area is provided. The semiconductor device includes a sense amplifier and a memory cell. The memory cell is provided over the sense amplifier. The sense amplifier includes a first transistor and a second transistor. The memory cell includes a third transistor and a capacitor. The first transistor is a p-channel transistor. The second transistor and the third transistor each include an oxide semiconductor in a channel formation region. The third transistor is preferably provided over the capacitor.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first circuit comprising a first transistor and a second transistor electrically connected to each other;
a first insulating film over the first circuit; and
a second circuit over the first insulating film, the second circuit comprising a capacitor and a third transistor electrically connected to each other, wherein the third transistor is positioned over the capacitor,
wherein the first transistor is a p-channel type transistor,
wherein the second transistor and the third transistor each comprise an oxide semiconductor in a channel formation region,
wherein the second circuit is configured to hold a potential, and
wherein the first circuit is configured to amplify the potential held in the second circuit.

2. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium and oxygen.

3. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium, zinc, and oxygen.

4. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium, gallium, zinc, and oxygen.

5. The semiconductor device according to claim 1 , comprising a second insulating film between the first transistor and the second transistor, wherein the second transistor is positioned over the first transistor.

6. The semiconductor device according to claim 1 , wherein the first transistor comprises silicon in a channel formation region.

7. The semiconductor device according to claim 1 , comprising a semiconductor substrate, wherein the first transistor comprises a channel formation region in the semiconductor substrate.

8. The semiconductor device according to claim 1 , wherein the capacitor and the channel formation region of the third transistor overlap with each other.

9. A semiconductor device comprising:
a first circuit comprising a first transistor and a second transistor electrically connected to each other;
a first insulating film over the first circuit; and
a second circuit over the first insulating film, the second circuit comprising a capacitor and a third transistor electrically connected to each other, wherein the third transistor is positioned over the capacitor,
wherein the first transistor is a p-channel type transistor,
wherein the second transistor and the third transistor each comprise an oxide semiconductor in a channel formation region,
wherein the second circuit is configured to store data to function as a memory, and
wherein the first circuit is configured to amplify a potential of the data stored in the second circuit to function as a sense amplifier of the memory.

10. The semiconductor device according to claim 9 , wherein the oxide semiconductor comprises indium and oxygen.

11. The semiconductor device according to claim 9 , wherein the oxide semiconductor comprises indium, zinc, and oxygen.

12. The semiconductor device according to claim 9 , wherein the oxide semiconductor comprises indium, gallium, zinc, and oxygen.

13. The semiconductor device according to claim 9 , comprising a second insulating film between the first transistor and the second transistor, wherein the second transistor is positioned over the first transistor.

14. The semiconductor device according to claim 9 , wherein the first transistor comprises silicon in a channel formation region.

15. The semiconductor device according to claim 9 , comprising a semiconductor substrate, wherein the first transistor comprises a channel formation region in the semiconductor substrate.

16. The semiconductor device according to claim 9 , wherein the capacitor and the channel formation region of the third transistor overlap with each other.

17. A method for manufacturing a semiconductor device, the method comprising:
forming a wiring electrically connected to a capacitor;
forming a first insulating film over the wiring;
forming a first oxide semiconductor film over the first insulating film;
after forming the first oxide semiconductor film, forming an opening in the first insulating film to expose the wiring;
after forming the opening, performing a high-density plasma treatment on the first oxide semiconductor film; and
forming a conductive film in contact with the first oxide semiconductor film and in contact with the wiring via the opening.

18. The method according to claim 17 , wherein a portion of the wiring exposed from the first insulating film is oxidized by the high-density plasma treatment.

19. The method according to claim 17 , the method comprising:
forming a second transistor over a second insulating film positioned over a first transistor;
forming a third insulating film over the second transistor; and
forming the capacitor over the third insulating film.

20. The method according to claim 19 , wherein the second transistor comprises a second oxide semiconductor film.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei

Classifications

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title

• G05F3/16 Primary

  being semiconductor devices · CPC title

• H01L27/10858

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L27/1255

  Electricity · mapped topic