Ferroelectric crystal film, electronic component, manufacturing method of ferroelectric crystal film, and manufacturing apparatus therefor

Patent metadata

Field	Value
Publication number	US-10017874-B2
Application number	US-201213690263-A
Country	US
Kind code	B2
Filing date	Nov 30, 2012
Priority date	Jun 4, 2012
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

There is provided a manufacturing method of a ferroelectric crystal film in which an orientation of a seed crystal film is transferred preferably and a film deposition rate is suitable for volume production.
A seed crystal film is formed on a substrate in epitaxial growth by a sputtering method, an amorphous film including ferroelectric material is formed over the seed crystal film by a spin-coat coating method, the seed crystal film and the amorphous film are heated in an oxygen atmosphere for oxidation and crystallization of the amorphous film, and thereby a ferroelectric coated-and-sintered crystal film is formed.

First claim

The invention claimed is:

1. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one element selected from the group consisting of Li and Na, and
each ratio in the number of elements for said (Pb, A)(Zr, Ti)O 3 film satisfies the following formula (3′)
1≤(Pb+A)/(Zr+Ti)≤1.35  (3′).

2. The ferroelectric crystal film according to claim 1 , wherein
said ferroelectric coated-and-sintered crystal film has an orientation in the same face as said predetermined face.

3. The ferroelectric crystal film according to claim 1 , wherein
a Zr/Ti ratio in the number of elements for said (Pb, A)(Zr, Ti)O 3 film satisfies the following formula (1):
60/40≥Zr/Ti≥40/60  (1).

4. An electronic component, comprising
said ferroelectric crystal film according to claim 1 .

5. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one selected from the group consisting of Li and Na,
said ferroelectric seed crystal film has an orientation in (001), and
said ferroelectric coated-and-sintered crystal film has an orientation in (001).

6. A ferroelectric crystal film, comprising:
a ferroelectric seed crystal film formed on a substrate by a sputtering method and having an orientation in a predetermined face; and
a ferroelectric coated-and-sintered crystal film formed over said ferroelectric seed crystal film by a sol-gel method, wherein
said ferroelectric coated-and-sintered crystal film is formed by a process that a solution, which contains a metal compound including some or all component metals of said ferroelectric coated-and-sintered crystal film and partial polycondensate thereof in an organic solvent, is coated, heated, and crystallized,
each of said ferroelectric seed crystal film and said ferroelectric coated-and-sintered crystal film is a (Pb, A)(Zr, Ti)O 3 film, wherein A is at least one selected from the group consisting of Li and Na,
said ferroelectric seed crystal film has an orientation in (111), and
said ferroelectric coated-and-sintered crystal film has an orientation in (111).

Assignees

• Youtec Co Ltd
• Sae Magnetics Hk Ltd

Inventors

• Kijima Takeshi
• Honda Yuuji
• Iitsuka Daisuke
• Hata Kenjirou

Classifications

• C30B23/08

  by condensing ionised vapours (by reactive sputtering C30B25/06) · CPC title

• C30B1/023 Primary

  from solids with amorphous structure · CPC title

• H01L41/318

  Electricity · mapped topic

• C30B29/22

  Complex oxides · CPC title

• C30B23/02

  Epitaxial-layer growth · CPC title