Rapid crystallization of heavily doped metal oxides and products produced thereby

Patent metadata

Field	Value
Publication number	US-9359666-B2
Application number	US-201013256300-A
Country	US
Kind code	B2
Filing date	Feb 18, 2010
Priority date	Mar 13, 2009
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

A method of making a doped metal oxide comprises heating a first doped metal oxide with a laser, to form a crystallized doped metal oxide. The crystallized doped metal oxide has a different crystal structure than the first doped metal oxide.

First claim

What is claimed is:

1. A doped metal oxide structure, comprising:
a substrate,
a first doped metal oxide on the substrate, the first doped metal oxide comprising a metal oxide and a dopant nonmetal, wherein the atomic ratio of metal to oxygen to the dopant nonmetal in the first doped metal oxide is 1:0.5-1.99:0.01-1.5, and
a crystallized doped metal oxide directly on the first doped metal oxide, the crystallized doped metal oxide comprising the same metal oxide and the same dopant nonmetal as the first doped metal oxide, wherein an amount of the dopant nonmetal in the crystallized doped metal oxide is at least 50% of the amount of the dopant nonmetal in the first doped metal oxide,
wherein the crystallized doped metal oxide has a different crystal structure than the first doped metal oxide.

2. The structure of claim 1 , wherein the dopant nonmetal is nitrogen or fluorine, and the first doped metal oxide comprises a metal selected from titanium and tin.

3. The structure of claim 1 , wherein the crystallized doped metal oxide is one of nitrogen doped titanium oxide and fluorine doped titanium oxide.

4. The structure of claim 1 , wherein the crystallized doped metal oxide is one of nitrogen doped tin oxide and fluorine doped tin oxide.

5. The structure of claim 1 , wherein the first doped metal oxide is amorphous.

6. The structure of claim 1 , wherein the atomic percent of dopant nonmetal to metal in the crystallized doped metal oxide is 5-10%.

7. The structure of claim 1 , wherein the substrate is a heat-sensitive substrate.

8. The structure of claim 7 , wherein the heat-sensitive substrate comprises a polymer.

9. The structure of claim 1 , wherein the first doped metal oxide and the crystallized doped metal oxide have a combined thickness of 1-20 micrometers.

10. A doped metal oxide structure comprising:
a substrate;
a first doped metal oxide on the substrate, the first doped metal oxide comprising a metal oxide and a dopant nonmetal; and
a crystallized doped metal oxide directly on the first doped metal oxide, the crystallized doped metal oxide comprising the same metal oxide and the same dopant nonmetal,
wherein the crystallized doped metal oxide has a different crystal structure than the first doped metal oxide, and
wherein an atomic ratio of metal to oxygen to the dopant nonmetal in the first doped metal oxide is 1:0.5-1.99:0.01-1.5.

11. The doped metal oxide structure of claim 10 , an amount of the dopant nonmetal in the crystallized doped metal oxide is at least 10% of the amount of the dopant nonmetal in the first doped metal oxide.

12. The doped metal oxide structure of claim 11 , wherein the amount of the dopant nonmetal in the crystallized doped metal oxide is at least 50% of the amount of the dopant nonmetal in the first doped metal oxide.

Assignees

• Shang Jian-Ku
• Li Qi
• Univ Illinois

Inventors

• Shang Jian-Ku
• Li Qi

Classifications

• C23C14/081

  of aluminium, magnesium or beryllium · CPC title

• C01P2002/72

  by d-values or two theta-values, e.g. as X-ray diagram · CPC title

• C01P2002/54

  one element only · CPC title

• C01G19/02

  Oxides · CPC title

• C23C14/083

  of refractory metals or yttrium · CPC title