Multilayer body
US-2024229296-A9 · Jul 11, 2024 · US
by condensing ionised vapours (by reactive sputtering C30B25/06)
by condensing ionised vapours (by reactive sputtering C30B25/06) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B23/08 |
| Official title | by condensing ionised vapours (by reactive sputtering C30B25/06) |
| Display label | by condensing ionised vapours (by reactive sputtering C30B25/06) |
| Total patents | 70 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 11 |
| 2017 | 7 |
| 2018 | 5 |
| 2019 | 1 |
| 2020 | 3 |
| 2021 | 7 |
| 2022 | 4 |
| 2023 | 8 |
| 2024 | 9 |
| 2025 | 9 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Piezoelectric film, method of producing piezoelectric film, piezoelectric element, and piezoelectric device
US-2024172564-A1 · May 23, 2024 · US
Ion conductive material, electrolyte including ion conductive material, and methods of forming
US-11978847-B2 · May 7, 2024 · US
Ion conductive material including halide material, electrolyte including the same, and methods of forming the same
US-11973186-B2 · Apr 30, 2024 · US
Multilayer body
US-2024133075-A1 · Apr 25, 2024 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-11967505-B2 · Apr 23, 2024 · US
Deposition Of Piezoelectric Films
US-2024114800-A1 · Apr 4, 2024 · US
Single crystal epitaxial layer having a rhombohedral lattice
US-11885040-B2 · Jan 30, 2024 · US
Large-area single-crystal silver thin-film structure using single-crystal copper thin-film buffer layer and manufacturing method therefor
US-2024027661-A1 · Jan 25, 2024 · US
Tunable templating layers for perpendicularly magnetized Heusler films
US-11804321-B2 · Oct 31, 2023 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-2023260785-A1 · Aug 17, 2023 · US
Ion conductive material, electrolyte including ion conductive material, and methods of forming
US-2023261258-A1 · Aug 17, 2023 · US
Ion conductive material including complex metal halide, electrolyte including the same, and methods of forming the same
US-11664531-B2 · May 30, 2023 · US
Method for manufacturing sputtering target, method for forming oxide film, and transistor
US-11637015-B2 · Apr 25, 2023 · US
Nitride laminate and manufacturing method of the same
US-2023121803-A1 · Apr 20, 2023 · US
Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate
US-2023100683-A1 · Mar 30, 2023 · US
Ferroelectric thin film, electronic element using same, and method for manufacturing ferroelectric thin film
US-2023029023-A1 · Jan 26, 2023 · US
Metal oxide, formation method of metal oxide, semiconductor device, and manufacturing method of semiconductor device
US-2022320339-A1 · Oct 6, 2022 · US
Ion conductive material, electrolyte including ion conductive material, and methods of forming
US-2022263126-A1 · Aug 18, 2022 · US
Tunable templating layers for perpendicularly magnetized heusler films
US-2022165469-A1 · May 26, 2022 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B23/08?
- CPC C30B23/08 is the Cooperative Patent Classification code for “by condensing ionised vapours (by reactive sputtering C30B25/06).”
- How many patents are filed under CPC C30B23/08 (by condensing ionised vapours (by reactive sputtering C30B25/06))?
- Our database includes 70 publications tagged with this CPC code.
- Is patent activity under CPC C30B23/08 growing?
- Publication counts under this code: 9 in 2024 vs 9 in 2025 (latest complete years).