Processing method of silicon nitride film and forming method of silicon nitride film

Patent metadata

Field	Value
Publication number	US-10017853-B2
Application number	US-201715615945-A
Country	US
Kind code	B2
Filing date	Jun 7, 2017
Priority date	Jun 14, 2016
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A processing method of a silicon nitride film can modify a silicon nitride film such that the silicon nitride film has a required characteristic even if it is formed at a low temperature by CVD. The processing method of the silicon nitride film formed on a substrate by plasma CVD includes modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma.

First claim

We claim:

1. A forming method of a silicon nitride film, the forming method comprising:
a first process of forming the silicon nitride film on a substrate by plasma CVD;
a second process of modifying a surface portion of the silicon nitride film by irradiating microwave hydrogen plasma to the silicon nitride film to remove hydrogens in the surface portion of the silicon nitride film with atomic hydrogens contained in the microwave hydrogen plasma,
wherein the first process is performed by microwave plasma, and
the first process and the second process are performed consecutively in a same microwave plasma processing apparatus.

2. The forming method of the silicon nitride film of claim 1 ,
wherein the silicon nitride film is formed by microwave plasma CVD.

3. The forming method of the silicon nitride film of claim 1 ,
wherein the microwave hydrogen plasma is generated by exciting a hydrogen gas, or by exciting a hydrogen gas and an inert gas with microwave.

4. The forming method of the silicon nitride film of claim 1 ,
wherein a processing temperature when irradiating the microwave hydrogen plasma is in a range from 200° C. to 500° C.

5. The forming method of the silicon nitride film of claim 1 ,
wherein a processing pressure when irradiating the microwave hydrogen plasma is in a range from 10 Pa to 100 Pa.

6. The forming method of the silicon nitride film of claim 1 ,
wherein a depth of a modified portion of the surface portion of the silicon nitride film is equal to or larger than 10 nm.

7. The forming method of the silicon nitride film of claim 1 ,
wherein the irradiating of the microwave hydrogen plasma is performed by a RLSA (registered trademark) microwave plasma processing apparatus.

8. The forming method of the silicon nitride film of claim 1 ,
wherein the microwave plasma processing apparatus is a RLSA (registered trademark) microwave plasma processing apparatus.

9. The forming method of the silicon nitride film of claim 1 ,
wherein the first process and the second process are performed at a same processing temperature.

10. The forming method of the silicon nitride film of claim 1 ,
wherein a processing temperature of the first process is in a range from 200° C. to 500° C.

11. The forming method of the silicon nitride film of claim 1 ,
wherein a processing pressure of the first process is in a range from 10 Pa to 100 Pa.

Assignees

• Tokyo Electron Ltd

Inventors

• Nakanishi Toshio
• Katayama Daisuke

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/69433 Primary

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title