Photoelectric conversion element and photoelectric conversion element module

Patent metadata

Field	Value
Publication number	US-10014122-B2
Application number	US-201214124788-A
Country	US
Kind code	B2
Filing date	Jun 6, 2012
Priority date	Jun 8, 2011
Publication date	Jul 3, 2018
Grant date	Jul 3, 2018

Abstract

There are provided a photoelectric conversion element and a photoelectric conversion element module including the photoelectric conversion element, the photoelectric conversion element including a transparent substrate, a transparent conductive layer arranged on the transparent substrate, a photoelectric conversion layer arranged on the transparent conductive layer, a porous insulating layer arranged in contact with the photoelectric conversion layer, a reflective layer arranged in contact with the porous insulating layer, and a catalyst layer and a counter conductive layer that are arranged on the reflective layer, in which the photoelectric conversion layer contains a porous semiconductor, a carrier-transport material, and a photosensitizer, and in which the area of the orthogonal projection of the porous insulating layer onto the transparent substrate and the area of the orthogonal projection of the reflective layer onto the transparent substrate are each larger than the area of the orthogonal projection of the photoelectric conversion layer onto the transparent substrate.

First claim

The invention claimed is:

1. A photoelectric conversion element comprising:
a transparent substrate;
a transparent conductive layer arranged on the transparent substrate;
wherein the transparent conductive layer comprises two regions separated by a scribe line;
a photoelectric conversion layer arranged on the transparent conductive layer;
a porous insulating layer arranged in contact with the photoelectric conversion layer and covering a top surface of the photoelectric conversion layer and a side surface of the photoelectric conversion layer;
the porous insulating layer extending into the into the scribe line separating the two regions of transparent conductive layer and over a top horizontal surface of the two regions of the transparent conductive layer;
a reflective layer arranged in contact with the porous insulating layer and covering a whole of a top surface of the porous insulating layer; and
a catalyst layer and a counter conductive layer that are arranged on the reflective layer;
wherein the photoelectric conversion layer comprises:
a porous semiconductor,
a carrier-transport material, and
a photosensitizer,

wherein the photoelectric conversion layer, the porous insulating layer and the reflective layer are laminated in that order,
wherein the reflective layer is thicker than the porous insulating layer,
wherein the porous insulating layer comprises one or more compounds selected from the group consisting of niobium oxide, zirconium oxide, silicon oxide compounds, aluminum oxide, and barium titanate,
wherein the reflective layer comprises aluminum oxide or titanium oxide, and
wherein the porous insulating layer has an orthogonal projection onto the transparent substrate, the orthogonal projection of the porous insulating layer onto the transparent substrate having an area,
the reflective layer has an orthogonal projection onto the transparent substrate, the orthogonal projection of the reflective layer onto the transparent substrate having an area,
the photoelectric conversion layer has an orthogonal projection onto the transparent substrate, the orthogonal projection of the photoelectric conversion layer onto the transparent substrate having an area, and
the area of the orthogonal projection of the porous insulating layer onto the transparent substrate and the area of the orthogonal projection of the reflective layer onto the transparent substrate are each larger than the area of the orthogonal projection of the photoelectric conversion layer onto the transparent substrate.

2. The photoelectric conversion element according to claim 1 , wherein the porous insulating layer is arranged in contact with an upper portion and side surfaces of the photoelectric conversion layer, and wherein the reflective layer is arranged in contact with an upper portion of the porous insulating layer.

3. The photoelectric conversion element according to claim 1 , wherein the porous insulating layer has a thickness of 0.2 μm or more and 5 μm or less.

4. The photoelectric conversion element according to claim 1 , wherein the total thickness of the porous insulating layer and the reflective layer is 10 μm or more.

5. The photoelectric conversion element according to claim 1 , wherein the porous insulating layer comprises a material having an electrical conductivity of 1×10 12 Ω·cm or less.

6. The photoelectric conversion element according to claim 1 , wherein the reflective layer comprises a material identical to a material constituting the porous semiconductor.

7. The photoelectric conversion element according to claim 1 , wherein the reflective layer and the porous semiconductor are comprised of titanium oxide.

8. The photoelectric conversion element according to claim 1 , wherein the reflective layer is formed of fine particles having an average particle size larger than the average particle size of fine particles constituting the porous semiconductor.

9. A photoelectric conversion element module comprising two or more photoelectric conversion elements electrically connected in series, wherein at least one of the photoelectric conversion elements is the photoelectric conversion element according to claim 1 .

10. A photoelectric conversion element module comprising three or more photoelectric conversion elements electrically connected in series and/or parallel, wherein at least one of the photoelectric conversion elements is the photoelectric conversion element according to claim 1 .

11. A photoelectric conversion element module comprising two or more photoelectric conversion elements electrically connected in series and/or parallel, wherein each of the photoelectric conversion elements is the photoelectric conversion element according to claim 1 .

12. The photoelectric conversion element according to claim 1 , wherein the reflective layer has a side surface uncovered by the counter conductive layer.

Assignees

• Komiya Ryoichi
• Fukui Atsushi
• Yamanaka Ryohsuke
• Sharp Kk

Inventors

• Komiya Ryoichi
• Fukui Atsushi
• Yamanaka Ryohsuke

Classifications

• Y02E10/542

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