Photoelectric conversion element, wiring board for photoelectric conversion element, method for manufacturing photoelectric conversion element and photoelectric conversion structure
US-2016380221-A1 · Dec 29, 2016 · US
US2016372272A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016372272-A1 |
| Application number | US-201415123419-A |
| Country | US |
| Kind code | A1 |
| Filing date | Dec 5, 2014 |
| Priority date | Mar 5, 2014 |
| Publication date | Dec 22, 2016 |
| Grant date | — |
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A photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells connected in series on the substrate and satisfies the relations of the following formulas (I) to (III): J sc ≧20 mA/cm 2 , (I) I sc /X ≦2 mA/cm, and (II) P in ×R s ×Y 2 ×10 −4 <0.07. (III)
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1 . A photoelectric conversion module comprising a substrate and a plurality of photoelectric conversion cells connected in series on the substrate, wherein each of the photoelectric conversion cells includes a first conductive layer, a second conductive layer facing the first conductive layer with a spacing therebetween, a photoelectric conversion layer on the first conductive layer, and a carrier-transport material between the first conductive layer and the second conductive layer, wherein the photoelectric conversion layer includes a porous semiconductor layer and a photosensitizer absorbed to the porous semiconductor layer, wherein a short-circuit current density J sc obtained by irradiating the photoelectric conversion cells with pseudo sunlight with an energy density of 100 mW/cm 2 satisfies the relation of the following formula (I): J sc ≧20 mA/cm 2 (I), wherein a short-circuit current I sc obtained by irradiating the photoelectric conversion cells with pseudo sunlight with an energy density of 1 mW/cm 2 and a length X of the porous semiconductor layer in a direction perpendicular to a series connection direction of the photoelectric conversion cells satisfy the relation of the following formula (II): I sc /X≦ 2 mA/cm (II), and wherein an intensity P in [mW/cm 2 ] of light incident on the photoelectric conversion module, a total sheet resistance R s [Ω/square] of the first conductive layer and the second conductive layer in the photoelectric conversion cells, and a length Y [cm] of the porous semiconductor layer in the series connection direction of the photoelectric conversion cells satisfy the relation of the following formula (III): P in ×R s ×Y 2 ×10 −4 <0.07. (III) 2 . (canceled) 3 . (canceled) 4 . (canceled) 5 . (canceled) 6 . The photoelectric conversion module according to claim 1 , wherein the second conductive layer contains at least one selected from the group consisting of titanium, tungsten, gold, silver, copper, aluminum, and nickel. 7 . The photoelectric conversion module according to claim 1 , wherein the second conductive layer has a thickness of from 0.02 μm to 5 μm inclusive. 8 . The photoelectric conversion module according to claim 1 , wherein the second conductive layer contains titanium, and the second conductive layer has a thickness of from 0.3 μm to 2 μm inclusive. 9 . The photoelectric conversion module according to claim 1 , wherein the R s is 20 Ω/square or less. 10 . The photoelectric conversion module according to claim 1 , wherein the Y is less than 8 cm. 11 . The photoelectric conversion module according to claim 1 , wherein the Y is from 0.5 cm to 7.5 cm inclusive. 12 . The photoelectric conversion module according to claim 1 , wherein the first conductive layer has a thickness of from 0.02 μm to 5 μm inclusive. 13 . The photoelectric conversion module according to claim 1 , wherein the porous semiconductor layer has a surface area of from 10 m 2 /g to 200 m 2 /g inclusive. 14 . The photoelectric conversion module according to claim 1 , further comprising a porous insulating layer disposed between the second conductive layer and the photoelectric conversion layer and placed on the photoelectric conversion layer. 15 . The photoelectric conversion module according to claim 1 , further comprising a porous insulating layer on the photoelectric conversion layer and a catalyst layer on the porous insulating layer, wherein the second conductive layer is disposed on the catalyst layer. 16 . An electronic device comprising, as a power source unit, the photoelectric conversion module according to claim 1 . 17 . A sensor comprising, as a power source unit, the photoelectric conversion module according to claim 1 .
Serial interconnection of cells · CPC title
comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence) · CPC title
Dye sensitized solar cells · CPC title
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