Photoresist composition and method of manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10007182-B2
Application number	US-201615293756-A
Country	US
Kind code	B2
Filing date	Oct 14, 2016
Priority date	Jan 11, 2016
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

Provided are a photoresist composition and a method of manufacturing a semiconductor device using the same. The method of manufacturing a semiconductor device comprises forming a mask layer and a photoresist layer on a substrate, forming a photoresist pattern by patterning the photoresist layer, forming a mask pattern by patterning the mask layer through the photoresist pattern and forming a pattern by etching the substrate using the mask pattern, wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which includes a protecting group that causes decarboxylation by radical.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
forming a mask layer and a photoresist layer on a substrate;
forming a photoresist pattern by patterning the photoresist layer;
forming a mask pattern by patterning the mask layer through the photoresist pattern; and
forming a pattern by etching the substrate using the mask pattern,
wherein the formation of the photoresist layer comprises forming the photoresist layer, using a photoresist composition comprising a polymer which is an only component causing photochemical reaction in the photoresist composition and includes a protecting group that causes decarboxylation by radical.

2. The method of claim 1 , wherein the polymer is a polymer expressed by at least one of Chemical Formulas 1 through 3 described below:

wherein R1 comprises an alkyl chain of C1 through C20, and X is O, N or S.

3. The method of claim 1 , wherein the formation of the photoresist pattern comprises an exposure process of exposing the photoresist layer, and the radical is a secondary electron generated during the exposure process by a laser light that is incident on the photoresist layer in the exposure process.

4. The method of claim 3 , wherein carbon dioxide is generated by the exposure process.

5. The method of claim 3 , wherein the laser light uses krypton fluoride (KrF) excimer laser, argon fluoride (ArF) excimer laser, fluorine excimer laser or I-line laser as a light source.

6. The method of claim 3 , wherein the polymer comprises at least one of aliphatic carbon chain (C1 to C20), nitrogen (N), oxygen (O) and halides disposed on a phenyl ring.

7. The method of claim 1 , wherein the photoresist composition is a non-chemically amplified (Non-CAR) photoresist composition.

8. The method of claim 1 , wherein the photoresist composition is a positive photoresist composition.

9. A photoresist composition comprising:
a polymer being an only component causing photochemical reaction in the photoresist composition and including a protecting group that causes a decarboxylation by radical; and
an organic solvent.

10. The photoresist composition of claim 9 , wherein the polymer is a polymer expressed by at least one of Chemical Formulas 1 through 3 described below:

wherein R1 comprises an alkyl chain of C1 through C20, and X is O, N or S.

11. The photoresist composition of claim 10 , wherein the protecting group is deprotected by the decarboxylation and carbon dioxide is generated.

12. The photoresist composition of claim 10 , wherein the polymer comprises a first group that is disposed on a phenyl ring and contains at least one of aliphatic carbon chain (C1 to 20), nitrogen (N), oxygen (O) and halides.

13. The photoresist composition of claim 12 , wherein the polymer further comprises a second group that is disposed on a region symmetrical with the first group on the phenyl ring and contains at least one of aliphatic carbon chain (C1 to 20), nitrogen (N), oxygen (O) and halides.

14. The photoresist composition of claim 9 , wherein the photoresist composition is a non-chemically amplified (Non-CAR) photoresist composition.

15. The photoresist composition of claim 9 , wherein the photoresist composition is a positive photoresist composition.

16. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate having a mask layer on top of the substrate;
depositing a photoresist layer on the mask layer, the photoresist layer comprising a polymer which is an only component causing photochemical reaction in the photoresist layer and includes a repeating unit represented by Chemical Formula A or Chemical Formula B as shown below:

wherein R4 represents hydrogen, methyl, ethyl, propyl, or trifluoromethyl, and
Y represents a divalent linking group of C1 to C30 aliphatic group, C1 to C30 aromatic group, or any combination thereof, and Y optionally includes N, O, S, halides, or any combination thereof;
patternwise exposing the photoresist layer through a photomask with an EUV light, or an excimer laser light, or without a photomask with a particle beam to form an exposed photoresist layer;
developing the exposed photoresist layer with an aqueous TMAH developer or an alcohol-based solvent to form a photoresist pattern;
etching the mask layer using the photoresist pattern as an etching mask to form a mask pattern; and

etching the substrate using the mask pattern as an etching mask to form a device pattern.

17. The method of claim 16 , wherein the polymer further comprises a repeating unit which includes at least one polar group of a hydroxyl group, a carboxylic acid group, a sulfonamide, a dicarboxyimide, a fluoroalcohol, an N-hydroxy dicarboxyimide, an amino group, an imino group, and combinations thereof.

18. The method of claim 16 , wherein the photoresist layer does not comprise a photoacid generator.

19. The method of claim 16 , wherein the excimer laser light uses krypton fluoride (KrF) excimer laser, argon fluoride (ArF) excimer laser, or fluorine excimer laser as a light source.

20. The method of claim 16 , wherein the polymer comprises at least one of C1 to C20 aliphatic group, sulfur (S), nitrogen (N), oxygen (O), halides, and combinations thereof disposed on a phenyl ring.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jin
• Kim Hyun Woo
• Han Jin Kyu

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/691

  for Group V materials or Group III-V materials · CPC title

• H10P50/242

  of Group IV materials · CPC title

• G03F7/325

  Non-aqueous compositions · CPC title