Methods for forming layers on semiconductor substrates
US-9217201-B2 · Dec 22, 2015 · US
US10000846B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10000846-B2 |
| Application number | US-201314410550-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 23, 2013 |
| Priority date | Jun 26, 2012 |
| Publication date | Jun 19, 2018 |
| Grant date | Jun 19, 2018 |
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A method for producing a laminate that has to undergo frictional loads, including a substrate and a functional layer formed from tungsten-containing, amorphous diamond-like carbon. To be able to produce such functional layers easily, they are applied by means of a tungsten-containing precursor and by using a PACVD process. A laminate including a functional layer produced by means of a precursor and to the use of a metallo-organic compound as a precursor for producing a functional layer.
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The invention claimed is: 1. A method for producing a tribologically stressed laminate, comprising: applying a functional layer to a substrate, the functional layer made of tungsten-containing, amorphous, diamond-like carbon, wherein the functional layer is applied using a PACVD method and a tungsten-containing precursor. 2. The method as recited in claim 1 wherein the precursor is liquid or dissolved in liquid. 3. The method as recited in claim 2 wherein the precursor is made of an organometallic substance. 4. The method as recited in claim 3 wherein the organometallic substance includes a central atom of tungsten, at least one ligand of carbon monoxide and at least one ligand of an organic compound. 5. The method as recited in claim 4 wherein the organic compound is an at least diunsaturated hydrocarbon. 6. The method as recited in claim 3 wherein the precursor is a [(CO) 2 (diene) 2 W] compound. 7. The method as recited in claim 2 wherein the precursor is applied to the substrate with the aid of vapor pressure. 8. A laminate comprising: a metal substrate, an intermediate layer made of chromium applied thereto, a functional layer applied with the aid of a tungsten-containing precursor, using a PACVD method and a further functional layer deposited thereon, made of amorphous, diamond-like carbon, the precursor including a central atom of tungsten, at least one ligand of carbon monoxide and at least one ligand of an organic compound. 9. The method as recited in claim 8 wherein the organic compound is an at least diunsaturated hydrocarbon. 10. The method as recited in claim 8 wherein the precursor is a [(CO) 2 (diene) 2 W] compound. 11. A method comprising: providing an organometallic compound as a precursor and producing a functional layer on a metal substrate using a PACVD method and the precursor, the functional layer being a tungsten-containing a-C:H layer. 12. The method as recited in claim 11 wherein the organometallic compound has tungsten as the central atom and carbon monoxide as well as polyunsaturated hydrocarbons as ligands.
with layers adapted for cutting tools or wear applications · CPC title
with at least one DLC or an amorphous carbon based layer, the layer being doped or not · CPC title
from metal carbonyl compounds · CPC title
Free carbon containing component · CPC title
by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species · CPC title
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