Multi-layer electrode to improve performance of ferroelectric memory device
US-12588271-B2 · Mar 24, 2026 · US
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Wei Yi Yang patents
Wei Yi Yang is listed as an inventor on 34 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wei Yi Yang |
| Total patents | 34 |
| First publication | Oct 28, 2021 |
| Latest publication | Mar 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Ferroelectric random access memory device with seed layer
US-2025365979-A1 · Nov 27, 2025 · US
Ferroelectric Memory Device and Method of Manufacturing the Same
US-2025318143-A1 · Oct 9, 2025 · US
FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAME
US-2025294776-A1 · Sep 18, 2025 · US
FeRAM with laminated ferroelectric film and method forming same
US-12356631-B2 · Jul 8, 2025 · US
Interface film to mitigate size effect of memory device
US-12349366-B2 · Jul 1, 2025 · US
Ferroelectric Memory Device and Method of Manufacturing the Same
US-2024381664-A1 · Nov 14, 2024 · US
Interface film to mitigate size effect of memory device
US-2024381663-A1 · Nov 14, 2024 · US
Ferroelectric memory device and method of manufacturing the same
US-12137572-B2 · Nov 5, 2024 · US
Improve memory window of mfm mosfet for small cell size
US-2024357835-A1 · Oct 24, 2024 · US
Recent patents
Latest publications not already listed above.
Ferroelectric random access memory device with seed layer
US-2024334709-A1 · Oct 3, 2024 · US
Memory window of MFM MOSFET for small cell size
US-12075626-B2 · Aug 27, 2024 · US
Ferroelectric random access memory device with seed layer
US-12069867-B2 · Aug 20, 2024 · US
Interface film to mitigate size effect of memory device
US-12035537-B2 · Jul 9, 2024 · US
Multilayer structure, capacitor structure and electronic device
US-11967611-B2 · Apr 23, 2024 · US
Multi-layer electrode to improve performance of ferroelectric memory device
US-11916127-B2 · Feb 27, 2024 · US
FeRAM with Laminated Ferroelectric Film and Method Forming Same
US-2024064998-A1 · Feb 22, 2024 · US
Interface film to mitigate size effect of memory device
US-2024023344-A1 · Jan 18, 2024 · US
Multi-layer electrode to improve performance of ferroelectric memory device
US-2024021700-A1 · Jan 18, 2024 · US
FeRAM with laminated ferroelectric film and method forming same
US-11844226-B2 · Dec 12, 2023 · US
Multilayer structure, capacitor structure and electronic device
US-2023387190-A1 · Nov 30, 2023 · US
Memory window of mfm mosfet for small cell size
US-2023320103-A1 · Oct 5, 2023 · US
Memory window of MFM MOSFET for small cell size
US-11723212-B2 · Aug 8, 2023 · US
FeRAM with laminated ferroelectric film and method forming same
US-11665909-B2 · May 30, 2023 · US
Multi-layer electrode to improve performance of ferroelectric memory device
US-2022406916-A1 · Dec 22, 2022 · US
FeRAM with Laminated Ferroelectric Film and Method Forming Same
US-2022392906-A1 · Dec 8, 2022 · US
Interface film to mitigate size effect of memory device
US-2022367493-A1 · Nov 17, 2022 · US
Ferroelectric random access memory device with seed layer
US-2022320123-A1 · Oct 6, 2022 · US
Memory window of mfm mosfet for small cell size
US-2022310635-A1 · Sep 29, 2022 · US
Wakeup free approach to improve the ferroelectricity of feram using a stressor layer
US-2022285374-A1 · Sep 8, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 36 |
Top CPC classifications
Most common classification codes across this inventor's patents.