Memory cell including two selectors and method of making same
US-12432931-B2 · Sep 30, 2025 · US
This page is not indexed by search engines while we improve data quality.
Wang Zihui patents
Wang Zihui is listed as an inventor on 88 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Zihui |
| Total patents | 88 |
| First publication | Apr 16, 2015 |
| Latest publication | Sep 30, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Nonvolatile Memory Device Including Dual Memory Layers
US-2025254891-A1 · Aug 7, 2025 · US
Nonvolatile memory device including dual memory layers
US-12382642-B1 · Aug 5, 2025 · US
Nonvolatile memory device including dual memory layers
US-12284813-B2 · Apr 22, 2025 · US
Shielding of packaged magnetic random access memory
US-12278195-B1 · Apr 15, 2025 · US
Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap Layer
US-2025063952-A1 · Feb 20, 2025 · US
Multilayered seed for perpendicular magnetic structure including an oxide layer
US-12133395-B2 · Oct 29, 2024 · US
Magnetic memory element including perpendicular enhancement layers and dual oxide cap layers
US-12133471-B2 · Oct 29, 2024 · US
Nonvolatile Memory Device Including Dual Memory Layers
US-2024268125-A1 · Aug 8, 2024 · US
Memory Cell Including Two Selectors and Method of Making Same
US-2024015986-A1 · Jan 11, 2024 · US
Recent patents
Latest publications not already listed above.
Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer
US-2023413577-A1 · Dec 21, 2023 · US
Cross-point MRAM including self-compliance selector
US-11848039-B2 · Dec 19, 2023 · US
Magnetic Memory Element Including Perpendicular Enhancement Layers and Dual Oxide Cap Layers
US-2023403945-A1 · Dec 14, 2023 · US
Multilayered seed for perpendicular magnetic structure including an oxide layer
US-11785784-B2 · Oct 10, 2023 · US
Magnetic memory element incorporating dual perpendicular enhancement layers
US-11758822-B2 · Sep 12, 2023 · US
Cross-Point MRAM Including Self-Compliance Selector
US-2022383920-A9 · Dec 1, 2022 · US
Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers
US-2022376172-A1 · Nov 24, 2022 · US
Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide Layer
US-2022293677-A1 · Sep 15, 2022 · US
Magnetic memory element incorporating dual perpendicular enhancement layers
US-11417836-B2 · Aug 16, 2022 · US
Multilayered seed for perpendicular magnetic structure
US-11348971-B2 · May 31, 2022 · US
Cross-Point MRAM Including Self-Compliance Selector
US-2021312964-A1 · Oct 7, 2021 · US
Multilayered Seed for Perpendicular Magnetic Structure
US-2021167126-A1 · Jun 3, 2021 · US
Magnetic Memory Element Incorporating Dual Perpendicular Enhancement Layers
US-2021159399-A1 · May 27, 2021 · US
Multilayered seed for perpendicular magnetic structure
US-10950659-B2 · Mar 16, 2021 · US
Magnetic memory element incorporating perpendicular enhancement layer
US-10910555-B2 · Feb 2, 2021 · US
Multilayered Seed for Perpendicular Magnetic Structure
US-2020312905-A1 · Oct 1, 2020 · US
Magnetic random access memory with perpendicular enhancement layer
US-10727400-B2 · Jul 28, 2020 · US
Multilayered seed structure for magnetic memory element including a CoFeB seed layer
US-10720469-B2 · Jul 21, 2020 · US
Magnetic Memory Element Incorporating Perpendicular Enhancement Layer
US-2020227628-A1 · Jul 16, 2020 · US
Perpendicular magnetic tunnel junction (pMTJ) with in-plane magneto-static switching-enhancing layer
US-RE47975-E · May 5, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Avalanche Technology Inc | 97 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10N50/10 | 81 |
| G11C11/161 | 75 |
| H01L43/08 | 66 |
| H10B61/22 | 65 |
| H10N50/80 | 63 |