Multilayered seed for perpendicular magnetic structure including an oxide layer

Patent metadata

Field	Value
Publication number	US-12133395-B2
Application number	US-202318241856-A
Country	US
Kind code	B2
Filing date	Sep 2, 2023
Priority date	May 21, 2014
Publication date	Oct 29, 2024
Grant date	Oct 29, 2024

Abstract

The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen; a second seed layer formed on top of the first seed layer and comprising cobalt, iron, and boron; and a third seed layer formed on top of the second seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.

First claim

What is claimed is:

1. A magnetic structure comprising:
a seed layer structure including:
a first seed layer comprising a metal element and oxygen;
a second seed layer formed on top of said first seed layer and comprising cobalt, iron, and boron; and
a third seed layer formed on top of said second seed layer and comprising chromium; and

a magnetic fixed layer structure formed on top of said seed layer structure and having a first invariable magnetization direction substantially perpendicular to a layer plane of said magnetic fixed layer structure, said magnetic fixed layer structure including layers of a magnetic material interleaved with layers of a transition metal,
wherein said metal element is one of titanium, tantalum, or magnesium.

2. The magnetic structure of claim 1 , wherein said transition metal is nickel or platinum.

3. The magnetic structure of claim 1 , wherein said magnetic material comprises cobalt.

4. The magnetic structure of claim 1 further comprising:
an anti-ferromagnetic coupling layer formed adjacent to said magnetic fixed layer structure opposite said seed layer structure; and
a magnetic reference layer structure formed adjacent to said anti-ferromagnetic coupling layer opposite said magnetic fixed layer structure, said magnetic reference layer structure including:
a first and a second magnetic reference layers having a second invariable magnetization direction that is substantially perpendicular to layer planes thereof and is substantially opposite to said first invariable magnetization direction; and
a first non-magnetic perpendicular enhancement layer interposed between said first and second magnetic reference layers.

5. The magnetic structure of claim 4 , wherein said second magnetic reference layer is formed adjacent to said anti-ferromagnetic coupling layer and comprises cobalt.

6. The magnetic structure of claim 4 , wherein said anti-ferromagnetic coupling layer comprises iridium.

7. The magnetic structure of claim 4 further comprising:
an insulating tunnel junction layer formed adjacent to said first magnetic reference layer opposite said first non-magnetic perpendicular enhancement layer; and
a magnetic free layer structure formed adjacent to said insulating tunnel junction layer opposite said first magnetic reference layer, said magnetic free layer structure including one or more magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof.

8. The magnetic structure of claim 7 , wherein said magnetic free layer structure includes a first and a second magnetic free layers and a second non-magnetic perpendicular enhancement layer interposed therebetween.

Assignees

• Avalanche Technology Inc

Inventors

• Wang Zihui
• Huai Yiming

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10 Primary

  Magnetoresistive devices · CPC title

• H10B61/22

  of the field-effect transistor [FET] type · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title