Magnetic memory element incorporating perpendicular enhancement layer

Patent metadata

Field	Value
Publication number	US-10910555-B2
Application number	US-202016831519-A
Country	US
Kind code	B2
Filing date	Mar 26, 2020
Priority date	Sep 14, 2010
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

First claim

What is claimed is:

1. A magnetic memory element comprising:
a magnetic free layer structure including:
first, second, and third magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes thereof, said first, second, and third magnetic free layers each comprising cobalt and iron;
a first perpendicular enhancement layer (PEL) interposed between said first and second magnetic free layers and comprising magnesium; and
a second PEL interposed between said second and third magnetic free layers and comprising magnesium;

an insulating tunnel junction layer formed adjacent to said first magnetic free layer opposite said first PEL;
a magnetic reference layer structure including:
first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof, said first magnetic reference layer formed adjacent to said insulating tunnel junction layer opposite said first magnetic free layer; and
a third PEL interposed between said first and second magnetic reference layers;

an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said third PEL; and
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer having a second invariable magnetization direction substantially opposite to said first invariable magnetization direction.

2. The magnetic memory element according to claim 1 , wherein said magnetic free layer structure is deposited on top of said insulating tunnel junction layer.

3. The magnetic memory element according to claim 1 , wherein said first, second, and third magnetic free layers have a body-centered cubic lattice structure.

4. The magnetic memory element according to claim 1 , wherein said first, second, and third magnetic free layers each further comprise boron.

5. The magnetic memory element according to claim 1 , wherein said first PEL further comprises oxygen.

6. The magnetic memory element according to claim 1 , wherein said second PEL further comprises oxygen.

7. The magnetic memory element according to claim 1 , wherein said third PEL comprises one of molybdenum or tungsten.

8. A magnetic memory element comprising:
a magnetic free layer structure including:
first, second, and third magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes of said first, second, and third magnetic free layers, said first, second, and third magnetic free layers each comprising cobalt, iron, and boron;
a first perpendicular enhancement layer (PEL) interposed between said first and second magnetic free layers and comprising magnesium and oxygen; and
a second PEL interposed between said second and third magnetic free layers and comprising magnesium;

an insulating tunnel junction layer formed adjacent to said first magnetic free layer opposite said first PEL;
a magnetic reference layer structure including:
first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes of said first and second magnetic reference layers, said first magnetic reference layer comprising cobalt, iron, and boron and formed adjacent to said insulating tunnel junction layer opposite said first magnetic free layer; and
a third PEL interposed between said first and second magnetic reference layers;

an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said third PEL; and
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer having a second invariable magnetization direction that is substantially opposite to said first invariable magnetization direction and is substantially perpendicular to a layer plane of said magnetic fixed layer.

9. The magnetic memory element according to claim 8 , wherein said magnetic free layer structure is deposited on top of said insulating tunnel junction layer.

10. The magnetic memory element according to claim 9 further comprising a magnesium oxide cap layer formed on top of said third magnetic free layer.

11. The magnetic memory element according to claim 9 further comprising a chromium seed layer formed beneath said magnetic fixed layer.

12. The magnetic memory element according to claim 8 , wherein said third PEL comprises molybdenum.

13. The magnetic memory element according to claim 8 , wherein said second magnetic reference layer comprises elemental cobalt metal.

14. The magnetic memory element according to claim 8 , wherein said anti-ferromagnetic coupling layer comprises one of iridium or ruthenium.

15. The magnetic memory element according to claim 8 , wherein said magnetic fixed layer has a multilayer structure comprising layers of cobalt interleaved with layers of platinum.

16. The magnetic memory element according to claim 8 , wherein said first and second magnetic reference layers have different compositions.

17. A magnetic memory element comprising:
a magnetic free layer structure including:
first and second magnetic free layers having a variable magnetization direction substantially perpendicular to layer planes of said first and second magnetic free layers, said first and second magnetic free layers each comprising cobalt, iron, and boron; and
a first perpendicular enhancement layer (PEL) interposed between said first and second magnetic free layers and comprising magnesium and oxygen;

an insulating tunnel junction layer formed adjacent to said first magnetic free layer opposite said first PEL;
a magnetic reference layer structure including:
first and second magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes of said first and second magnetic reference layers, said first magnetic reference layer comprising cobalt, iron, and boron and formed adjacent to said insulating tunnel junction layer opposite said first magnetic free layer; and
a second PEL interposed between said first and second magnetic reference layers;

an anti-ferromagnetic coupling layer formed adjacent to said second magnetic reference layer opposite said second PEL; and
a magnetic fixed layer formed adjacent to said anti-ferromagnetic coupling layer opposite said second magnetic reference layer, said magnetic fixed layer having a second invariable magnetization direction that is substantially opposite to said first invariable magnetization direction and is substantially perpendicular to a layer plane of said magnetic fixed layer.

18. The magnetic memory element according to claim 17 , wherein said magnetic free layer structure is deposited on top of said insulating tunnel junction layer.

19. The magnetic memory element according to claim 17 , wherein said second PEL comprises molybdenum.

20. The magnetic memory element according to claim 17 , wherein said second magnetic reference layer comprises elemental cobalt metal.

Assignees

• Avalanche Technology Inc

Inventors

• Wang Zihui
• Hao Xiaojie
• Hu Longqian
• Huai Yiming

Classifications

• H10D48/385 Primary

  Devices using spin-polarised carriers · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3295

  Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers · CPC title