Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric
US-2026096424-A1 · Apr 2, 2026 · US
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Wang Yuguo patents
Wang Yuguo is listed as an inventor on 16 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Yuguo |
| Total patents | 16 |
| First publication | Jan 17, 2017 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric
US-12494425-B2 · Dec 9, 2025 · US
Ultra-low leakage diodes used for low input bias current
US-12336297-B2 · Jun 17, 2025 · US
Direct current measurement of 1/f transistor noise
US-11796588-B2 · Oct 24, 2023 · US
Ultra-low leakage diodes used for low input bias current
US-2023275082-A1 · Aug 31, 2023 · US
Integration scheme to build resistor, capacitor, efuse using silicon-rich dielectric layer as a base dielectric
US-2022375856-A1 · Nov 24, 2022 · US
FET using trench isolation as the gate dielectric
US-11404556-B2 · Aug 2, 2022 · US
Fet using trench isolation as the gate dielectric
US-2022140105-A1 · May 5, 2022 · US
Direct current measurement of 1/f transistor noise
US-2022082608-A1 · Mar 17, 2022 · US
Direct current measurement of 1/f transistor noise
US-11249130-B2 · Feb 15, 2022 · US
Recent patents
Latest publications not already listed above.
Direct current measurement of 1/f transistor noise
US-2019204375-A1 · Jul 4, 2019 · US
Capacitive mismatch measurement
US-2019181874-A1 · Jun 13, 2019 · US
Capacitive mismatch measurement
US-10236900-B1 · Mar 19, 2019 · US
Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers
US-9818740-B2 · Nov 14, 2017 · US
Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers
US-2017141101-A1 · May 18, 2017 · US
Method of improving bipolar device signal to noise performance by reducing the effect of oxide interface trapping centers
US-9548298-B1 · Jan 17, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Texas Instruments Inc | 16 |
| Texas Instuments Incorporated | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 5 |
| G01R31/2626 | 4 |
| H10P14/40 | 3 |
| H10D84/01 | 3 |
| H10W20/496 | 3 |